• Title/Summary/Keyword: University IT Research Center

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Influence of Sustain Pulse-Width on the Electro-Luminous Efficiency in AC-PDPs

  • Cho, T.S.;Kim, T.Y.;Kim, S.S.;Cho, D.S.;Kim, J.G.;Ahn, J.C.;Jung, Y.H.;Lim, J.Y.;Jung, J.M.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.115-116
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    • 2000
  • Influence of sustain pulse-width on electro-luminous efficiency is experimentally investigated for surface discharge of AC-PDP. It is found that the firing voltage is decreased as the pulse-width is increased from $2\;{\mu}s$ to $8\;{\mu}s$ with sweeping frequency range of 10 kHz to 50 kHz. It has been found that the optimal sustain pulse-width is in the range of $3{\sim}4\;{\mu}s$ under driving frequency range of 30 kHz and 50 kHz, based on observations of memory coefficient, wall charge, and wall voltage as well as luminous efficiency.

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Impulse Series for UWB-Based Cognitive Radio System

  • Zhang, Weihua;Shen, Hanbing;Bai, Zhiquan;Kwak, Kyung-Sup
    • ETRI Journal
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    • v.29 no.4
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    • pp.518-520
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    • 2007
  • In this letter, we propose an impulse series for an ultra-wideband-based cognitive radio system which can utilize the spectrum dynamically by controlling the impulse positions and thus reduce the system complexity.

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High Selectivity Coupled Line Impedance Transformer with Second Harmonic Suppression

  • Kim, Phirun;Park, Junsik;Jeong, Junhyung;Jeong, Seungho;Chaudhary, Girdhari;Jeong, Yongchae
    • Journal of electromagnetic engineering and science
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    • v.16 no.1
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    • pp.13-18
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    • 2016
  • This paper presents a design of an impedance transformer (IT) with high frequency selectivity characteristics. The frequency selectivity can be controlled by even- and odd-mode impedance of a shunt coupled transmission line (TL). For experimental validation, a 50- to $20-{\Omega}$ IT was implemented at a center frequency ($f_0$) of 2.6 GHz for the long-term evolution signal. The measured results were in good agreement with the simulations, showing a return loss higher than 19 dB over a passband bandwidth of 0.63 GHz (2.28-2.91 GHz) and good sharp frequency selectivity characteristic near to the passband. The series coupled TL provides a transmission zero at 5.75 GHz, whereas the shunt coupled TL provides three transmission zeros located at 2 GHz, 3.1 GHz, and 7.14 GHz.

Influence of gas mixture ratio on the secondary electron emission coefficient (${\gamma}$) of MgO single crystals and MgO protective layer in surface discharge AC-PDPs

  • Lim, J.Y.;Jung, J.M.;Kim, Y.G.;Ahn, J.C.;Cho, T.S.;Cho, D.S.;Kim, J.G.;Kim, T.Y.;Kim, S.S.;Jung, M.W.;Choi, S.H.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Kang, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.117-118
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    • 2000
  • The secondary electron emission coefficient ${\gamma}$ of MgO single crystals according to the gas mixture ratio of Xe to Ne have been investigated by ${\gamma}-focused$ ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest ${\gamma}$ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinity for operating Ne (Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the ${\gamma}$ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.

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p-contact resistivity influence on device-reliability characteristics of GaN-based LEDs (p-contact 저항에 따른 GaN기반 LED의 device-reliability 특성)

  • Park, Min-Jung;Kim, Jin-Chul;Kim, Sei-Min;Jang, Sun-Ho;Park, Il-Kyu;Park, Si-Hyun;Cho, Yong;Jang, Ja-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.159-159
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    • 2010
  • We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

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Identification and characterization of a novel cancer/testis antigen gene

  • Cho , Bom-Soo;Lee, Dae-Yeon;Lim , Yoon;Park, Sae-Young;Lee, Ho-Soon;Kim, Woo-Ho;Yang, Han-Kwang;Bang, Yung-Jue;Jeoung , Doo-Il
    • Proceedings of the PSK Conference
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    • 2002.10a
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    • pp.326.1-326.1
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    • 2002
  • We applied serological analysis of cDNA expression library technique to identify cancer-associated genes. We screened cDNA expression libraries of human testis and gastric cancer cell lines with sera of patients with gastric cancers. We identified a gene whose expression is testis-specific among normal tissues. We cloned and characterized this novel gene. It contains D-E-A-D box domain and encodes a putative protein of 630 amino acids with possible helicase activity. It showed wide expression in various cancer tissues and cancer cell lines. (omitted)

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Characteristics of p-InGaN/GaN Superlattice structure of the p-GaN according to annealing conditions (p-InGaN/GaN 초격자구조에서 열처리 조건에 따른 오믹전극의 특성)

  • Jang, Seon-Ho;Kim, Sei-Min;Lee, Young-Woong;Lee, Young-Seok;Lee, Jong-Seon;Park, Min-Jung;Park, Il-Kyu;Jang, Ja-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.160-160
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    • 2010
  • In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

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Influence of Sustain Pulse-Width on the Electrical and Optical characteristics in AC-PDPs

  • Jeong, Y.W.;Cho, T.S.;Kim, T.Y.;Choi, M.C.;Ahn, J.C.;Jeong, J.M.;Lim, J.Y.;Choi, S.H.;Chong, M.W.;Kim, S.S.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Kang, S.O.;Cho, G.S.;Choi, E.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.155-158
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    • 2000
  • Influence of sustain pulse-width on electro-luminous efficiency is experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and rising time of 300 ns has been used in the experiment. It is found that the firing voltage is decreased as the pulse-width is increased from 2 ${\mu}s$ to 8 ${\mu}s$ with sweeping frequency range of 10 kHz to 50 kHz. It has been found that the optimal sustain pulse-width is in the range of $3{\sim}4{\mu}s$ under driving frequency range of 30 kHz and 50 kHz, based on observation of memory coefficient, wall charge, and wall voltage as well as luminous efficiency.

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Measurement of Wall Voltage in Reset Discharge of AC PDP

  • Park, K.D.;Jung, Y.;Ryu, C.G.;Choi, J.H.;Kim, S.B.;Cho, T.S.;Oh, P.Y.;Jeon, S.H.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.722-725
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    • 2003
  • In AC plasma display, it is very important to quantify the wall voltage induced by the wall charge accumulated on the dielectric surface. If we know the quantities of the wall voltage in each period of every sequence; reset period, address period and sustain period, then it helps us to design the optimal driving waveform for high efficiency plasma display. We develop a new method to measure the wall voltage with VDS (Versatile Driving Simulator) system. From this method the wall voltage induced by a wall charge profiles just after the reset discharge of every cells in plasma display panel can be investigated and analyzed successfully. It is noted that the wall voltage profiles are influenced by the space charge and then they are stabilized as time goes by. It is also noted that both the remaining wall charge at the previous sequence and space charges contribute to wall voltage quantities just after the reset discharge. It is noted that the wall charges contribute dominantly after a few hundreds microseconds, while the space charges have been decayed within 100 ${\mu}s$ just after the reset discharge.

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