• 한국작물학회지
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• 제42권1호
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• pp.95-103
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• 1997

우리나라에서 식용목적으로 생산되고 있는 단옥수수, 초당옥수수 및 찰옥수수의 수확후 품질관리와 고품질 선도유지 및 안전유통 방안 확립의 기초자료를 얻고자, 단옥 002, 초당옥 Cocktail 86 및 찰옥 001 옥수수를 수확직후 얼음처리후 0~2$^{\circ}C$의 저온저장고에 저장하면서 일반상온 및 저온저장과 비교한 결과는 다음과 같다. 1. 풋옥수수를 수확후 상온 및 저온에 저장하면 15일후 낱알의 수분함량이 옥수수의 종류에 따라서 각각 22~24 및 7.4~8.2% 감소되어 품질이 크게 떨어졌으나 얼음처리 후 저온저장 한 것은 수분의 변화가 적었다. 2. 풋옥수수의 종류별 과피함량은 수확시 찰옥수수가 1.71%로 초당옥수수와 단옥수수의 0.81% 및 1.09%보다 높았으며, 15일 저장후에는 단옥수수의 경우 무예냉 상온 및 저온저장 구에서 13.25% 및 3.5%로 수확시보다 3~12배 증가되었으나, 얼음처리 저온저장구에서는 1.31%로 증가율이 아주 적었으며, 초당옥수수 및 찰옥수수도 단옥수수와 유사하였다. 3. 알코올 불용성 고형물 함량도 과피함량의 경우와 유사하여 얼음처리 저온저장 효과가 인정되었는데, 특히 찰옥수수에서 그 효과가 크게 나타났다. 4. 종류별 유리당함량은 단옥수수의 경우 sucrose, glucose, fructose 및 maltose 등 4종이 분리되었으나, 초당옥수수와 찰옥수수는 maltose가 검출되지 않았고, 유리당류의 구성 비율은 sucrose가 60~74%를 차지하여 주종을 이루고 있었으며, 저장중 당 종류별 손실율도 sucrose가 높았으나 얼음예냉 저온저장으로 저장 중 유리 당 손실을 최소화 할 수 있었다. 5. 종류별 유리 아미노산의 경우 단옥수수는 alanine 외 20종, 초당옥수수는 glutamic acid외 18종, 찰옥수수는 glutamic acid외 20종이 확인되었으며, 특히 성인병 예방에 효과가 있어 기능성 아미노산으로 알려진 ${\gamma}$-aminobutylic acid (GABA)가 3종류 모두에서 검출되었고, 15일 저장후 총 유리 아미노산함량으로 볼 때 얼음예냉 저온저장구가 품질 유지 효과가 큰 것으로 나타났다.

• 융합신호처리학회 학술대회논문집
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• 한국신호처리시스템학회 2003년도 하계학술대회 논문집
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• pp.226-229
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• 2003

본 논문은 Uncooled DFB-LD를 광원으로 사용하는 일반적인 8채널 구조의 CWDM시스템에 대해 메트로 파장대를 사용하여 최대 15채널까지 증설이 가능한 시스템 구조에 대한 제안 및 특성을 시뮬레이션 하였다.

• 전자공학회논문지A
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• 제33A권7호
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• pp.185-197
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• 1996

We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 센서학회지
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• 제18권4호
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• 센서학회지
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• 제25권5호
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• pp.349-353
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• 2016

Recently, research on bolometer-type uncooled infrared image sensor which is made for industrial applications has been increasing. In general, it is difficult to calibrate fixed pattern noise (FPN) of bolometer array. In this paper, average-current calibration algorithm is presented for reducing bolometer resistance offset. A resistor which is produced by standard CMOS process, on the average, has a deviation. We compensate for deviation of each resistor using average-current calibration algorithm. The proposed algorithm has been implemented by a chip which is consisted of a bolometer pixel array, average current generators, current-to-voltage converters (IVCs), a digital-to-analog converter (DAC), and analog-to-digital converters (ADCs). These bolometer-resistor array and readout circuit were designed and manufactured by $0.35{\mu}m$ standard CMOS process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.148-149
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• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• 한국광학회지
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• 제24권4호
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• pp.189-195
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• 2013

본 논문에서는 두 매의 BD-2 렌즈와 비구면 회절 광학을 포함하는 F/1.2, 시야각 $15.2^{\circ}$와 $8-14{\mu}m$의 원적외선 파장대역을 가지는 광학계를 설계하였다. 이 광학계는 uncooled camera에 사용될 수 있으며, 광학계의 분석은 BSP로 진행되었다. 회절광학은 주어진 두께를 가지는 물리적인 면으로 취급하였으며, 분석결과를 출사동공법과 같은 기존 방법들에 의한 것과 회절차수 합성법에 의한 것과 비교하였다.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.1005-1009
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• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• 센서학회지
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• 제27권6호
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.