• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.