• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.368-369
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• 2003

The recent development of InGaN-based white light emitting diodes (LEDs) has expanded their potential applications in areas such as white electric home appliances, backlight for mobile phone or notebook PC, and indoor lightings. In this lecture, recent researches related to the phosphors for LEDs applications and their luminescent properties were reviewed. PDPs are considered as the most potential flat panel displays with a large-screen size. Phosphors in PDPs directly affect the brightness and lifetime. So, many researchers have tried to improve the luminescence characteristics of the phosphors especially under vacuum ultraviolet (VUV) excitation. We overviewed recent research trends and conclusive achievements for the PDP phosphors.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1792-1794
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• 2001

In this paper, the basic characteristics of flat fluorescent lamp using ultraviolet generated from gas discharge and powder type electro luminescent display using a phenomenon of the light emission caused by the electrical field applied to phosphor are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap. Current(displacement current + discharge current) in flat fluorescent lamp using.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.55.4-55
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• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.295-295
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• 2008

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• Electrical & Electronic Materials
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• v.1 no.2
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• pp.136-148
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• 1988

본 논문은 Epoxy수지에 무기물을 첨가하여 tracking 특성에 미치는 자외선 조사의 영향을 연구하였다. 시료는 Bisphenol A형 Epoxy수지에 충진제 MgO와 Al(OH)$_{3}$를 각각 첨가한 시료와 무기물을 첨가하지 않은 무층진 시료에 대하여 자외선을 조사하여 산화 및 열화현상과 tracking현상을 비교 연구 검토하였다. 그 결과 자외선조사로 인하여 carbonyl기의 생성과 craze의 발생이 있었고 이는 tracking 파괴와 침식을 용이하게 한다. 그리고 Epoxy수지에 충진제를 첨가하므로서 자외선에 의한 열화를 감소시키고 내 tracking성을 향상시킨다.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.316-318
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• 2001

In this paper, the basic characteristics of flat fluorescent lamp using ultraviolet generated from gas discharge and powder type electrolyminescent display(P-ELD) using a phenomenon of the light emission eaused by the electrical field applied to phosphor are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap. Current(displacement current + discharge current) in flat fluorescent lamp using.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.134-134
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.107-112
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• 2013

The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.