• Journal of the Korean Society for Precision Engineering
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• v.17 no.12
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• pp.145-150
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• 2000

Micro punching is one of general methods to fabricate simple holes such as permanent ink-jet printer nozzles. A thin punch, that is need for micro punching, usually has been obtained by mechanical machining. There are some method to obtain a thin punch from a cylindrical rod, e.g., microgrinding and WEDG (Wire Electro-Discharge Grinding). Inefficiently, only one punch can be obtained from these machining methods. In contrast with these methods, many punches can be fabricated simultaneously by electrochemical process. Electrochemical process has usually aimed to obtain very sharp probe for atomic force microscopy (AFM) or scanning tunneling microscopy (STM), and it has not been considered the whole shape of a probe in spite of good merits. In this paper, an ultrathin punch with a tapered shape and a cylindrical tip is newly fabricated by electrochemical process.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.792-796
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• 2000

With the development of micro machining, it becomes an important part to fabricate an electrode which has tens of ${\mu}m$ or less. There are two methods to get a narrow hole; non-contact type such as EDM(Electro-discharge machining) and contact type such as punching. A punch which has a tapered shape with a cylindrical tip is fabricated in this paper. To make this punch, a method which was used to fabricate a cylindrical shape by electrochemical process was applied. The control factors for the shape and their limits are verified through an experiment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.139-145
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• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.