• Journal of Periodontal and Implant Science
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• v.48 no.6
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• pp.373-382
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• 2018

Purpose: The aim of this study was to evaluate the effects of various prophylactic treatments of titanium implants on bacterial biofilm formation, correlating surface modifications with the biofilms produced by Pseudomonas aeruginosa PAO1, Staphylococcus aureus, and bacteria isolated from saliva. Methods: Pure titanium disks were treated with various prophylactic procedures, and atomic force microscopy (AFM) was used to determine the degree to which surface roughness was modified. To evaluate antibiofilm activity, we used P. aeruginosa PAO1, S. aureus, and saliva-isolated Streptococcus spp., Bacteroides fragilis, and Staphylococcus epidermidis. Results: AFM showed that the surface roughness increased after using the air-polishing device and ultrasonic scaler, while a significant reduction was observed after using a curette or polishing with Detartrine ZTM (DZ) abrasive paste. In addition, we only observed a significant (P<0.01) reduction in biofilm formation on the DZ-treated implant surfaces. Conclusion: In this study, both AFM and antibiofilm analyses indicated that using DZ abrasive paste could be considered as the prophylactic procedure of choice for managing peri-implant lesions and for therapy-resistant cases of periodontitis.

• Polymer(Korea)
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• v.37 no.3
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• pp.316-322
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• 2013

In this study, poly(ethylene terephthalate) (PET) was treated with fluorination and ultrasonic washing treatment for hydrophilic modification of PET film. We measured the change of surface modified PET film surface characteristics using contact angle, surface free energy, FE-SEM, AFM and XPS. After direct fluorination and ultrasonic washing treatment, the water contact angle was measured to be $10.81^{\circ}$, 85% reduction compared to the untreated PET film. Total surface free energy has been measured to be $42.25mNm^{-1}$, 650% increase compared to the untreated PET film. Also RMS roughness has been measured to be 1.965 nm, 348% increase compared to the untreated PET film. Hydrophilic functional group C-OH bond concentration has increased approximately 3 times. These results are attributed to the hydrophilic functional group and cavitation due to chemical etching. From this result, it was suggested that the fluorination-ultrasonic washing treatment method could be useful to make PET film surface hydrophilic.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.2
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• pp.132-138
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• 2010

Vibro-contact of cantilever tip is studied with respect to contact mechanics and an elastic characteristic of nanoscale surface is imaged. The contact resonance frequency is calculated theoretically using the spring-mass and Herzian models, and the variation of resonance frequency of cantilever was analyzed when the cantilever was free and contact. The elasticity imaging was also achieved successfully using phase and amplitude signals obtained from the spheroidized steel specimens by prototype ultrasonic AFM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.111-114
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• 2001

(Ba,Sr) $RuO_3$ thin films were fabricated on Si(100) wafer by metal organic chemical vapor deposition using ultrasonic spraying. When the substrate temperature was varied, the BSR thin films showed good crystallinity above 50$0^{\circ}C$ and showed (110) preferred orientation by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the grain size of BSR thin films depended strongly on the Ba/Sr ratio. With the increase in the amount of Sr relative to Ba, the resistivity of BSR films decreased fro m415 to 261 $\mu$$\Omega$${\cdot}$cm.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.2-127.2
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• 2011

본 연구에서는 RF Magnetron Sputtering System을 이용하여 ZnO계 투명전도막 증착시 Vaporization된 MeOH를 유입함으로써 박막증착과 동시에 표면의 Roughness를 제어하여 이에따른 전기적 특성 및 광학적 특성의 개선에 대하여 연구하였다. 실험방법으로 기존의 RF Magnetron Sputtering System에 Vaporization이 가능한 Ultrasonic을 이용하여 MeOH를 Vaporized시켜 MFC Controll을 통해 챔버에 유입하여 ZnO계 투명전도막의 박막증착과 동시에 표면 Texturing을 하였다. ZnO계 투명전도막의 박막증착시 Vaporized MeOH의 유입에 따른 광학적 특성변화를 UV-visible-nIR spectrometry로 조사하였으며, 전기적 특성 변화를 4-Point-Probe로 조사하였으며, 표면적 특성 변화를 Atomic Force Microscope(AFM), Scanning Electron Microscopy(SEM)를 조사하였으며, 박막의 결정성장특성 변화를 X-ray Diffraction(XRD)으로 조사하였으며, Vaporized MeOH 유입에 따른 박막의 성분분석을 Secondary Ion Mass Spectrometry (SIMS)로 조사함으로써 최적의 조건 및 공정을 확립하였다.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.163-167
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• 2006

Ultrasonic irradiation in a solution during the chemical reaction may accelerate the rate of the reaction and the crystallization at low temperature. We have synthesized nanometer sized magnetite particles using coprecipitation method, sonochemical method without surfactant, and sonochemical method with surfactant, in order to investigate the effect of ultrasonic irradiation and surfactant on the coprecipitates of metal ions. The size of the magnetite nanoparticles prepared by coprecipitation method, and sonochemical method without surfactant showed broad distributions. But we got uniform nanoparticles using a sonochemical method with oleic acid. The average size of the particles can be controlled by the ratio $R=[H_2O]/[surfactant]$. The size of the magnetite nanoparticles prepared by this method showed narrow distributions. We have characterized the nanoparticles using an X-ray diffraction (XRD), a superconducting quantum interference device (SQUID), and atomic force microscope (AFM). The size and distribution of the magnetite nanoparticles were measured by dynamic light scattering (DLS) method.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.4 s.193
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• pp.153-158
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• 2007

Recently nano imprint lithography to fabricate photonic crystal on polymer is preferred because of its simplicity and short process time and ease of precise manufacturing. But, the technique requires the precise mold as an imprinting tool for good replication. These molds are made of the silicon, nickel and quartz. But this is not desirable due to complex fabrication process, high cost. So, we describe a simple, precise and low cost method of fabricating PDMS stamp to make the photonic crystals. In order to fabricate the PDMS mold, we make the original pattern with designed hole array by finding the optimal electron beam writing condition. And then, we have tried to fabricate PDMS mold by the replica molding with ultrasonic vibration and pressure system. We have used the cleaning process to solve the detaching problem on the interface. Using these methods, we acquired the PDMS mold for photonic crystals with characteristics of a good replication. And the accuracy of replication shows below 1% in 440nm at diameter and in 610nm at lattice constant by dimensional analysis by SEM and AFM.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.