• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1261-1262
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• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• Journal of the Korea Concrete Institute
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• v.28 no.1
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• pp.59-65
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• 2016

Commercial synthetic resins with great amount of hydrogen atoms were investigated for neutron shielding aggregates. Total three types of resins were considered in this study: high density polyethylene (HDPE), polypropylene (PP), and ultra molecular weight polyethylene (UPE). When these resins replaced 20, 40, 60 vol% of fine aggregates, mechanical properties were first evaluated including compressive and tensile strengths, and then image/microstructure analyses such as cross-section analysis, SEM, and X-ray CT were performed. The results showed that the compressive and tensile strengths decreased with the increase of replacement ratio of HDPE and PP, which was found through image analysis that it was closely related to the distribution of resins at the failure surface of test specimens. The strength reduction of UPE was quite small compared to HDPE and PP but it abruptly increased when the replacement level exceeded 60 vol%. The results of microstructure analyses indicated that the replacement level significantly affected the amount of air void so that it is critical to determine the reasonable amount of UPE to make cementitous materials for neutron shielding.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.3A
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• pp.189-198
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• 2011

Although high strength bolts with tensile strength of 1,000 MPa are mainly used in steel structure construction sites throughout the world, new high strength bolts are required owing to the installation of continuous long-span bridges resulting from the development and distribution of high strength steel and ultra-thick steel plates. Currently, high strength bolts with tensile strength of 1,300 MPa are being used. However, as they tend to place a large load on a small section of space, a high strength bolt of high structural performance and screw thread shape with less stress concentration is thought to be more effective. This study conducted analyses in order to develop an improved screw thread shape relative to the KS screw thread shape. A new screw thread shape with less stress concentration and effective load distribution at the time of fastening bolts and nuts was provided upon analysis of the characteristics of screw thread shape. Additionally, in an experimental study, the structural performance of high strength bolts with tensile strength of 1,300 MPa was investigated. The results revealed that the new screw thread shape was more effective than the existing screw thread shape in terms of structural performance and mitigating the stress concentration.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

• Journal of Navigation and Port Research
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• v.26 no.1
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• pp.22-27
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• 2002

The 25 Watt hybrid MIC SSPA has been developed in the frequency rang from 1.6265 GHz to 1.6465 GHz for uplink of INMARST's earth station. To simplify the fabrication process, the whole system is designed of two parts composed of a friving amplifier and a power amplifier. The Motorolas MRF-6401 is used for driving part, the Motorolas MRF-16006 and MRF-16030 is used the power amplifier. We reduced weight and volume of high power amplifier through arranging the bias circuits in the same housing. The realized SSPA has more than 30 dB for gain within 20 MHz bandwidth, and the voltage standing wave ratios(VSWR) of input and output port are less than 1.7, respectively. The output power of 44 dBm is achieved at the 1 dB gain compression point of 106365 GHz These results reveal a high power amplifier of 25 Watt which is the design target. The Proposed SSPA manufacture techniques in this paper can be applied to the implementation of high power amplifiers for some radars and SCPC.

• The Korean Journal of Pesticide Science
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• v.16 no.3
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• pp.195-201
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• 2012

We tested for pesticide residues in 124 samples of 22 different items of imported fruits circulated in Gyeonggido. Total 218 pesticides were analyzed by multi-residue method using gas chromatography/nitrogen phosphorus detector-electron capture detector (GC/NPD-ECD), time of flight/mass spectrometer (TOF/MS), ultra performance liquid chromatography/photo diode array (UPLC/PDA), high performance liquid chromatography/fluorescence detector (HPLC/FLD) and mass spectrometer (LC/MS/MS). The pesticides were detected in 18 fruits samples, ranging 0.003~0.3 mg/kg and no samples had violative residue. The separation test to 14 sample pesticides detected was conducted to monitor the current status of pesticide residues according to the partial characteristic. The pesticides were detected in 14 peels ranging 0.03~1.5 mg/kg and 2 fleshes in less than detection limits. These results indicate that imported fruits are safe when the human takes normally but even the small amount of pesticides is harmful when the human takes it in a prolonged period. Therefore, the pesticide residual amounts of imported friuts should be constantly monitored for food safety.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.34 no.1
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• pp.53-62
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• 2016

In recent years, UAV Photogrammetry based on an ultra-light UAS(Unmanned Aerial System) installed with a low-cost compact navigation device and a camera has attracted great attention through fast and accurate acquirement of geo-spatial data. In particular, UAV Photogrammetry do gradually replace the traditional aerial photogrammetry because it is able to produce DEMs(Digital Elevation Models) and Orthophotos rapidly owing to large amounts of high resolution image collection by a low-cost camera and image processing software combined with computer vision technique. With these advantages, UAV-Photogrammetry has therefore been applying to a large scale mapping and cadastral surveying that require accurate position information. This paper presents experimental results of an accuracy performance test with images of 4cm GSD from a fixed wing UAS to demarcate parcel boundaries in agricultural area. Consequently, the accuracy of boundary point extracted from UAS orthoimage has shown less than 8cm compared with that of terrestrial cadastral surveying. This means that UAV images satisfy the tolerance limit of distance error in cadastral surveying for the scale of 1: 500. And also, the area deviation is negligible small, about 0.2%(3.3m²), against true area of 1,969m² by cadastral surveying. UAV-Photogrammetry is therefore as a promising technology to demarcate parcel boundaries.

• Journal of Welding and Joining
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• v.34 no.2
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• pp.1-10
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• 2016

The use of materials for modern lightweight auto-bodies is becoming more complex than hitherto assemblies. The high strength materials nowadays frequently used for more specific fields such as the front and rear sub frames, seat belts and seats are mounted to the assembled body structure using bolt joints. It is desirable to use nuts attached to the assembled sheets by projection welding to decrease the number of loose parts which improves the quality. In this study, nut projection welding was carried out between a nut of both boron steel and carbon steel and ultra-high strength hot-stamped steel sheets. Then, the joints were characterized by optical and scanning electron microscope. The mechanical properties of the joints were evaluated by microhardness measurements and pullout tests. An indigenously designed sample fixture set-up was used for the pull-out tests to induce a tensile load in the weld. The fractography analysis revealed the dominant interfacial fracture between boron steel nut weld which is related to the shrinkage cavity and small size fusion zone. A non-interfacial fracture was observed in carbon steel nut weld, the lower hardness of HAZ caused the initiation of failure and allowed the pull-out failure which have higher in tensile strengths and superior weldability. Hence, the fracture load and failure mode characteristics can be considered as an indication of the weldability of materials in nut projection welding.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.