• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.784-790
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• 2012

In this paper, an all-digital CMOS ultra-wideband(UWB) pulse generator for high band(6~10 GHz) frequency range is presented. The pulse generator is designed and implemented with extremely low power and low complexity. It is designed to meet the FCC spectral mask requirement by using Gaussian pulse shaping circuit and control the center frequency by using CMOS delay line with shunt capacitor. Measurement results show that the center frequency can be controlled from 4.5 GHz to 7.5 GHz and pulse width is 1.5 ns and pulse amplitude is 310 mV peak to peak at 10 MHz pulse repetition frequency(PRF). The circuit is implemented in 0.13 um CMOS process with a core area of only $182{\times}65um^2$ and dissipates the average power of 11.4 mW at an output buffer with 1.5-V supply voltage. However, the core consumes only 0.26 mW except for output buffer.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.354-365
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• 2015

This work presents an Internet of Things (IoT) system for home energy management based on a custom-designed Impulse Radio Ultra-Wideband (IR-UWB) transceiver that targets a generic and multi-standard control system. This control system enables the interoperability of heterogeneous devices: it integrates various sensor nodes based on ZigBee, EnOcean and UWB in the same middleware by utilizing an ad-hoc layer as an interface between the hardware and software. The paper presents as a first the design of the IR-UWB transceiver for a portable sensor node integrated with the middleware layer, and also describes the receiver connected to the control system. The custom-designed low-power transmitter on the sensor node is fabricated with 130 nm CMOS technology. It generates a signal with a 1.1 ns pulse width while consuming $39{\mu}W$ at 1 Mbps. The UWB sensor node with a temperature measurement capability consumes 5.31 mW, which is lower than the power level of state-of-the-art solutions for smart-home applications. The UWB hardware and software layers necessary to interface with the control system are verified in over-the-air measurements in an actual office environment. With the implementation of the presented sensor node and its integration in the energy management system, we demonstrate achievement of the broad flexibility demanded for IoT.

• Transactions of Materials Processing
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• v.11 no.1
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• pp.24-35
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• 2002

Recent trend and future prospect of flat rolling of steel has been summarized based on the earlier reports. Key technology in the plate rolling is to have ultra fine microstructure having high resistance against crack propagation during application. Heavy accelerated cooling facility and high power rolling mill will be helpful to develope the high toughness steel. Precise modeling of properly prediction based on deformation and transformation imposed on microstructure of steel during processing is highly anticipated. For the hot strip rolling process, new trend is lies on the production of ultra-thin gauged hot strip to substitute cold rolled strip. For the substitution of cold rolled strip into hot rolled strip widely, high formable property of hot strip is highly required. For the formabilit, the ferritic rolling of extra low carbon steel under high lubricated condition is essential. Recently introduced semi-continuous thin slab and rolling mill line is very plausible to develope those kinds of products easily In the view groin facility combination. New idea to modify the existing continuous hot strip mill line to produce the ultra thin-gauged hot strip in an economic way is suggested in this report.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.4
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• pp.1-8
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• 2020

Mechanical components that support structures in aerospace and power generation industries require high-strength materials. Particularly, in the aerospace industry, aluminum alloys, titanium alloys, and composite materials are increasingly used due to their high maneuverability and durability to withstand low temperature extreme environments; however, ultra-high-strength steel is still used in key components under heavy loads such as landing gears. In this paper, the fault cause analysis and troubleshooting of aircraft parts made of ultra-high-strength steel (300M) broken during normal operation are described. To identify the cause of the defect, a temporary inspection of the same aircraft was performed, and material testing, non-destructive inspection, microstructure examination, and fracture area inspection of the damaged parts were performed. Fracture analysis results showed that a crack in the shape of a branch developed from the tool mark in the direction of the intergranular strain. Based on the results, the cause of fracture was confirmed to be stress corrosion.

• ETRI Journal
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• v.27 no.5
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• pp.579-584
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• 2005

A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.

• ETRI Journal
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• v.29 no.5
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• pp.670-672
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• 2007

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.433-434
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• 2007

This paper describes a low-voltage dynamic random-access memory (DRAM) focusing on subthreshold leakage reduction during self-refresh (sleep) mode. By sharing a power switch, multiple iterative circuits such as row and column decoders have a significantly reduced subthreshold leakage current. To reduce the leakage current of complex logic gates, dual channel length scheme and input vector control method are used. Because all node voltages during the standby mode are deterministic, zigzag super-cutoff CMOS is used, allowing to Preserve internal data. MTCMOS technique Is also used in the circuits having no need to preserve internal data. Sub-1.2-V 1-Gb mobile DDR DRAM employing all these low-power techniques was designed in a 60 nm CMOS technology and achieved over 77% reduction of overall leakage current during the self-refresh mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.745-753
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• 2016

This paper presents a fully synthesizable low power interconnect bus for millimeter-scale wireless sensor nodes. A segmented ring bus topology minimizes the required chip real estate with low input/output pad count for ultra-small form factors. By avoiding the conventional open drain-based solution, the bus can be fully synthesizable. Low power is achieved by obviating a need for local oscillators in member nodes. Also, aggressive power gating allows low-power standby mode with only 53 gates powered on. An integrated wakeup scheme is compatible with a power management unit that has nW standby mode. A 3-module system including the bus is fabricated in a 180 nm process. The entire system consumes 8 nW in standby mode, and the bus achieves 17.5 pJ/bit/chip.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.12B
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• pp.1548-1555
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• 2011

In ultra-deep submicron technology, minimization of propagation delay and power consumption on buses is one of the most important design objectives in system-on-chip (SOC) design. Crosstalk between adjacent wires on the bus may create a significant portion of propagation delay. Elimination or minimization of such faults is crucial to the performance and reliability of SOC designs. Most of the previous works on bus encoding are targeted either to minimize the bus switching or minimize the crosstalk delay, but not both. This paper proposes a new bus encoding scheme which can adaptively select one of functions "invert" and "logic-convert" according the number of bus switching on an encoded 4-bit cluster. This scheme leads to minimization of both crosstalk and bus switching. In experiment result, our proposed encoding technique consumes about 25% less power over the previous, while completely eliminating the crosstalk delay.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.