• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• 전기학회논문지
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• 제59권10호
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• pp.1850-1855
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• 2010

The application field of the pulse power is very wide. Recently, Pulse power technologies take a large place in several applications. Then, many civil and military applications proceed. Marx generator is widely used in high voltage applications. Marx generator is widely used in high voltage applications, such as eletromagnetic wave and power lasers. This paper, we described about the high voltage pulse generator. A compact size high voltage pulse generator with nanosecnd rise time has been fabricated and investigated experimentally. The marx generator has 2 stages. Each stage was constructed one charging capacitor, two electrodes and one charging resistor. A inductance structure is used in order to improve the switching performances fo the whole generator. The experiments of rise time in pure gas and mixtures of gases were described. We tested the Marx generator at different insulation gas. the results show that the dielectric strength of the $N_2-SF_6$ mixture was significantly increased compared with pure nitrogen gas. The experimental results show that the rise time characteristics of the Marx generator can be controlled through varying insulation gas.

• 열처리공학회지
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• 제14권5호
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.133-133
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• 2011

최근 나노입자를 이용한 비휘발성 메모리 소자의 제작에 대한 연구가 진행되고 있다. 특히, 실리사이드 계열의 나노입자를 적용한 소자는 일함수가 크지만 실리콘 내의확산 문제를 가지고 있는 금속 나노입자와 달리 현 실리콘 기반의 반도체 공정 적용이 용이한 잇 점을 가지고 있다. 따라서 본 연구에서는 실리사이드 계열의 화합물 중에서 4.63 eV인 Vanadium Silicide ($V_3$Si) 박막을 열처리 과정을 통하여 수 nm 크기의 나노입자로 제작하였다. 소자의 제작은 p-Si기판에 5 nm 두께의 $SiO_2$ 터널층을 dry oxidation 방법으로 성장시킨 후 $V_3$Si 금속박막을 RF magnetron sputtering system을 이용하여 3~5 nm 두께로 tunnel barrier위에 증착시켰다. Rapid thermal annealing법으로 질소 분위기에서 $1000^{\circ}C$의 온도로 30초 동안 열처리하여 $V_3$Si 나노 입자를 형성 하였으며. 20 nm 두께의 $SiO_2$ 컨트롤 산화막층을 ultra-high vacuum magnetron sputtering을 이용하여 증착하였다. 마지막으로 thermal evaporation system을 통하여 Al 전극을 직경 200, 두께 200nm로 증착하였다. 제작된 구조는 metal-oxide-semiconductor구조를 가지는 나노 부유 게이트 커패시터 이며, 제작된 시편은 transmission electron microscopy을 이용하여 $V_3$Si 나노입자의 크기와 균일성을 확인했다. 소자의 전기적인 측정은 E4980A capacitor parameter analyzer와 Agilent 81104A apulse pattern generator system을 이용한 전기용량-전압 측정을 통해 전하저장 효과를 분석하였다.

• Journal of Electrical Engineering and Technology
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• 제8권2호
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• pp.304-315
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• 2013

In this paper, analysis of cascaded H-bridge multilevel inverter in DTC-SVM (Direct Torque Control-Space Vector Modulation) based induction motor drive for FCEV (Fuel Cell Electric Vehicle) is presented. Cascaded H-bridge multilevel inverter uses multiple series units of H-bridge power cells to achieve medium-voltage operation and low harmonic distortion. In FCEV, a fuel cell stack is used as the major source of electric power moreover the battery and/or ultra-capacitor is used to assist the fuel cell. These sources are suitable for utilizing in cascaded H-bridge multilevel inverter. The drive control strategy is based on DTC-SVM technique. In this scheme, first, stator voltage vector is calculated and then realized by SVM method. Contribution of multilevel inverter to the DTC-SVM scheme is led to achieve high performance motor drive. Simulations are carried out in Matlab-Simulink. Five-level and nine-level inverters are applied in 3hp FCEV induction motor drive for analysis the multilevel inverter. Each H-bridge is implemented using one fuel cell and battery. Good dynamic control and low ripple in the torque and the flux as well as distortion decrease in voltage and current profiles, demonstrate the great performance of multilevel inverter in DTC-SVM induction motor drive for vehicle application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1840-1842
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• 2003

This paper describes an experiment of detecting a temperature and components of arc plasma of electrical circuit breaker with a spectroscopic system. The system includes an optical fiber, a monochromator which has three gratings from low to high resolution and ICCD of which time resolution is 50 ns. This system enables measuring a temperature and components of arc plasma of a circuit breaker which is generated and extinguished in a few ms. We use a Planck's law and Boltzmann Plot method for calculating a temperature of arc plasma. A Xenon lamp is used for calibrating the system and this is very important for calculating a temperature of arc plasma. In this study, Arc plasma of Ag and Cu contact was investigated and these represent the contact of low voltage and extra-ultra high voltage circuit breaker, respectively. 8 $kA_{rms}$ test current was applied with a capacitor bank.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.147-149
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• 2002

Recently, the study on development of electrical and electronic device is done to set miniature, high degrees of integration and efficiency by using inorganic materials the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Journal of Magnetics
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• 제12권1호
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• pp.35-39
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• 2007

A highly sensitive magnetic sensor using the Giant MagnetoImpedance effect has been developed. The sensor performance is studied and estimated. The sensor circuitry consists of a square wave generator (driving source), a sensing element in a form of composite wire of a 25 $\mu$m copper core electrodeposited with a thin layer of soft magnetic material ($Ni_{80}Fe_{20}$), and two amplifier stages for improving the gain, switching mechanism, scaler circuit, an AC power source driving the permeability of the magnetic coating layer of the sensing element into a dynamic state, and a signal pickup LC circuit formed by a pickup coil and an capacitor. Experimental studies on sensor have been carried out to investigate the key parameters in relation to the sensor sensitivity and resolution. The results showed that for high sensitivity and resolution, the frequency and magnitude of the ac driving current through the sensing element each has an optimum value, the resonance frequency of the signal pickup LC circuit should be equal to or twice as the driving frequency on the sensing element, and the anisotropy of the magnetic coating layer of the sensing wire element should be longitudinal.

• Journal of Power Electronics
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• 제19권3호
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• pp.645-654
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• 2019

In this paper, a new high step up DC/DC converter with a modified super-lift technique is presented. The coupled inductor technique is combined with the super-lift technique to provide a tenfold or more voltage gain with a proper duty cycle and a low turn ratio. Due to a high conversion ratio, the voltage stress on the semiconductor devices is reduced. As a result, low voltage ultra-fast recovery diodes and low on resistance MOSFET can be used, which improves the reverse recovery problems and conduction losses. This converter employs a passive clamp circuit to recycle the energy stored in the leakage inductance. The proposed convertor features a high conversion ratio with a low turn ratio, low voltage stress, low reverse recovery losses, omission of the inrush currents of the switch capacitor loops, high efficiency, small volume and reduced cost. This converter is suitable for renewable energy applications. The operational principle and a steady-state analysis of the proposed converter are presented in details. A 200W, 30V input, 380V output laboratory prototype circuit is implemented to confirm the theoretical analysis.

• 대한전자공학회논문지TE
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• 제42권3호
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• pp.45-50
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• 2005

산업용, 의학용 및 군사용, 환경감시용 등 다양한 분야에서 UV 카메라가 이용되고 있다. 높은 분해능과 고효율을 가진 GaN 계열의 III-V족 질화물 반도체를 이용하여 제작한 UV 센서인 포토다이오드로 부터 최적의 자외선 응답을 읽어낼 수 있는 ROIC(ReadOut IC)를 개발 했다. FPA(Focal Plane Array)용 UV $8{\times}8$ ReadOut IC(ROIC)를 설계를 위하여 포토다이오드 타입 센서 소자를 커패시터로 모델링하였다. ROIC는 검출되는 신호를 받아 이를 증폭하고 잡음제거 필터링을 거쳐 픽셀 단위로 순차적으로 출력하는 기능을 수행하도록 하였다. ROIC는 $0.5{\mu}m$ 2Poly, 3Metal N-well CMOS process를 이용하여 제작되었으며, 이방성 전도성 페이스트 (Anisotropic Conductive Paste:ACP)를 사용하는 gold stud bumping 공정으로 ROIC와 포토다이오드 어레이를 하이브리드 패키지 (package)한 후 PC에서 자외선 영상으로 확인함으로써 ROIC의 동작을 검증하였다.