• Title/Summary/Keyword: UV-light

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A Novel Ultraviolet Sensor using Photoluminescent Porous Silicon (광 루미네슨스 다공질 실리콘을 이용한 새로운 자외선 센서)

  • Min, Nam-Gi;Go, Ju-Yeol;Gang, Cheol-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.9
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    • pp.444-449
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    • 2001
  • In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

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Decolorization of Rhodamine B Using UV/$TiO_2$ System (UV/$TiO_2$ 시스템을 이용한 Rhodamine B의 색도 제거)

  • 박영식;나영수;안갑환
    • Journal of Environmental Health Sciences
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    • v.28 no.5
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    • pp.59-64
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    • 2002
  • The photocatalytic decolorization of the Rhodamine B (RhB) was studied using a UV/TiO$_2$ reactor. Yakuri titanium dioxide(anatase) was used as the suspended photocatalyst and proved to be effective for decolorization irradiated with UV light (254 mm). The photocatalyzed dioxide concentrations, light intensity and air flow rates. In 0.01 mM RhB, color could be completely photodegraded after 3 hours. Absorption spectrum of an aqueous solution containing RhB showed a continued diminution of the RhB concentration in the solution bulk : concomitantly, no new absorption peaks appeared. This confirmed the decolorization of RhB, i.e., the break up of the chromopore. The optimum loaded titanium dioxide for the decolorization was 0.75 g/(equation omitted). The light intensity showed exponential decay with distance. The decay of light intensity of RhB solution showed different tendency from TiO$_2$. These results suggested that the photocatalytic decolorization of dyes may be available method for decolorizing in wastewater.

UV and visible emission intensity control of ZnO thin films for light emitting device applications (발광소자 응용을 위한 ZnO 박막의 자외선 및 가시광 발광 세기 제어)

  • Kang, Hong-Seong;Shim, Eun-Sub;Kang, Jeong-Seok;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.108-111
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    • 2001
  • ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

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Ellipso-Microscopic Observation of Titanium Surface under UV-Light Irradiation

  • Fushimi, K.;Kurauchi, K.;Nakanishi, T.;Hasegawa, Y.;Ueda, M.;Ohtsuka, T.
    • Corrosion Science and Technology
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    • v.15 no.6
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    • pp.265-270
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    • 2016
  • The ellipso-microscopic observation of a titanium surface undergoing anodization in $0.05mol\;dm^{-3}$ of $H_2SO_4$ was conducted. During irradiation by ultra-violet (UV) light with a wavelength of 325 nm, the titanium surface allowed for the flow of a photo-induced current and showed up as a bright, patch-like image on an ellipso-microscopic view. The brightness and patch-pattern in the image changed with flowing photo-induced current. The changes in the brightness and the image corresponded to the formation and/or degradation of titanium oxide due to the photo-electrochemical reaction of the oxide. An in situ monitoring using the ellipso-microscope revealed that the film change was dependent on the irradiation light power, by UV-light increases the anodic current and results in the initiation of pitting at lower potentials as compared with the non-irradiated condition.

UV and visible emission intensity control of ZnO thin films for light emitting device applications (발광소자 응용을 위한 ZnO 박막의 자외선 및 가시광 발광 세기 제어)

  • 강홍성;심은섭;강정석;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.108-111
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    • 2001
  • ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

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Ultraviolet Light Sensor Based on an Azobenzene-polymer-capped Optical-fiber End

  • Cho, Hee-Taek;Seo, Gyeong-Seo;Lim, Ok-Rak;Shin, Woojin;Jang, Hee-Jin;Ahn, Tae-Jung
    • Current Optics and Photonics
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    • v.2 no.4
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    • pp.303-307
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    • 2018
  • We propose a simple ultraviolet (UV) sensor consisting of a conventional single-mode optical fiber capped with an azobenzene-moiety-containing polymer. The UV light changes the dimensions of the azobenzene polymer, as well as the refractive index of the material. Incident light with a wavelength of 1550 nm was reflected at the fiber/polymer and polymer/air interfaces, and interference of the reflected beams resulted in spectral interference that shifted the wavelength by 0.78 nm at a UV input power of $2.5mW/cm^2$. The UV sensor's response to wavelength is nonlinear and stable. The response speed of the sensor is limited by detection noise, which can be improved by modifying the insertion loss of the UV sensor and the signal-to-noise ratio of the detection system. The proposed compact UV sensor is easy to fabricate, is not susceptible to electromagnetic interference, and only reacts to UV light.

Sterilization of Escherichia coli Based on Nd: YAG Resonator with a Pulsed Xenon Flashlamp

  • Kim, Hee-Je;Kim, Dong-Jo;Hong, Ji-Tae;Xu, Guo-Cheng;Lee, Dong-Gil
    • Journal of Electrical Engineering and Technology
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    • v.6 no.2
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    • pp.275-279
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    • 2011
  • Sterilization of Escherichia coli (E. coli) is examined using a unique pulsed ultra-violet (UV) elliptical reactor based on Nd:YAG laser resonator, UV radiation from a pulsed xenon flashlamp. The light from the discharge has a broadband emission spectrum extending from the UV to the infrared region with a rich UV contained. Sterilization method by using the UV light is fast, environment-friendly and it does not cause secondary pollution. A Nd:YAG laser resonator having elliptical shape has advantage of concentrating the radiation of the UV light at two foci as the quart sleeve filled with E. coli. The primary objective of this research is to determine the important parameters such as pulse per second (pps), the applied voltage for sterilizing E. coli by using an UV elliptical reactor. From the experiment result, the sterilization effect of UV elliptical reactor is better than that of UV cylindrical reactor, and it can be 99.9% of sterilization at 800V regardless of the pps within 10 minutes.

Development of UV curable polymer and curing characteristics estimation for UV nanoimprint (UV 나노임프린트를 위한 UV 경화성 수지 개발 및 경화 특성 평가)

  • 이진우;이승재;이응숙;정준호;조동우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1220-1223
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    • 2003
  • The UV nanoimprint technology uses the UV light as the energy source. Because the imprint process is carried out in room temperature and low pressure, this technology has its own merits compared to the thermal nanoimprint. However, in UV nanoimprint technology, a resin which has low viscosity is essential for the improvement of accuracy. In this research, a resin (named as IMS01) which has relatively low viscosity was developed. And a measurement system was developed in order to measure the degree of cure of the resin. The measurement system which is composed of FT-IR, UV light source and optical guide can measure the degree of cure in real time. From the experimental results, it was found that the IMS01 is cured more rapidly than existing resin (PAK01).

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Realization of Static Image on OLEO using Photoluminescence Degradation (PL Degradation을 활용한 OLED 소자의 사진 이미지 구현)

  • Suh, Won-Gyu;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.859-862
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    • 2008
  • We have realized static image on organic light emitting diodes (OLEDs) using photoluminescence degradation. Ultraviolet (UV) was irradiated to the glass side of device. UV power was 350 Wand the wavelength was 365 nm. The UV irradiation gives rise to the degradation of photoluminescence. Due to the degradation, the current density-voltage curve was shifted to the higher voltage side and the luminescence was also degraded by the current and photoluminescence drop. The negative imaged films were prepared to control the transmittance of UV. The UV light was passed through the film. By this method, the film image was transferred to the device with reversed image and the static image was realized on the OLED.

Fabrication of Conductive ZnO Thin Filn Using UV-Enhanced Atomic Layer Deposition

  • Yang, Da-Som;Kim, Hong-Beom;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.373-373
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    • 2012
  • We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

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