• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.201-202
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• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.44-48
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• 2005

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.475-480
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• 2003

Nanocomposite of Au doped ZrO$_2$ films was prepared, which could be used as non-linear optic materials, selective absorption and transmission films. After heat treatment of prepared thin film by dip-coating method, the characteristics were investigated by X-ray diffraction, UV-VIS Spectrometer, Atomic Force Microscopy (AFM) and Scanning Electron Microscope (SEM). Film thickness was about 150 nm, the Au particle size was 15~35 nm. The thin film had a smooth surface roughness about 1.06 nm. Nonlinearity optics was found that films showed absorption peak at 600~650 nm visible region by plasma resonance of Au metal particles.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.84-88
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• 2007

CdSe hollow spheres with the diameter of about 30-50 nm were synthesized after ultrasonic irradiation in the presence of $Cd(NO_3)_2,\;Na_2SeSO_3$, and polyvinylalcohol(PVA). The characteristics of CdSe hollow spheres were analyzed using X-ray diffraction(XRD), transmission electron microscopy(TEM), UV-vis measurement and PL spectrometer. The characteristics of solvent as water and water-1-propanol mixture in the system played important roles on the controlled synthesis of hollow sphere. Based on the observation of morphological difference of CdSe, the possible mechanism of CdSe hollow sphere formation will be discussed.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.316-322
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• 2011

Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.207-207
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• 2003

최근 광촉매 재료로 각광받고 있는 TiO$_2$는 band gap 에너지가 3.0-3.2eV로 자외선 영역과 일부 가시광선 영역에서 활성을 갖는 것으로 알려져 있다. 따라서 용액 중에 결정화 및 안정화 되어있는 TiO$_2$의 band gap 에너지를 낮춘다면 가시광 영역의 광반응을 얻을 수 있다. 이에 본 연구는 G. Sato등이 제안한 방법으로 TiO$_2$ sol을 제조할 때 band gap 에너지를 낮추고자 천이 금속원소를 첨가하여 복합 및 담지된 TiO$_2$계 복합 sol을 합성하고자 하였다 출발원료는 TiC1$_4$를 가수분해하여 제조한 TiOCl$_2$에 천이금속원소인 V, Cr, Fe, Ni, Nb 등의 chloride 화합물을 첨가하여 중화 및 세척과정을 거친 후, 과산화수소수에 용해하여 전구체 용액인 titania peroxo용액을 제조하였다 제조된 전구체 용액은 온도와 시간을 변수로 각각 열처리하여 TiO$_2$계 복합 sol을 합성하였다. 제조된 시편은 X-선 회절 분석, 투과전자현미경, particle size analyzer, ζ-potential analyzer 및 UV-VIS Spectrometer 통을 이용하여 천이금속 첨가에 따른 TiO$_2$계 복합 sol의 형성과정과 특성변화를 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1345_1346
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on glass substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100~350 W in the steps of 50 W on structural, electrical and optical properties of AZO films. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant about 150 nm on glass substrate. The grain size of AZO films figured out X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated Hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.575-575
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• 2013

Indium Zinc Oxide (IZO)는 가시광 영역(380~780 nm)에서 높은 투과율과 적외선영역에서 높은 반사율을 보이는 투명산화막으로서 Flexible display 적용으로 주목 받는 재료이다. 특히 비 화학적 양론비(non-stoichiometric)로 성장된 박막은 N형 반도체 특성을 갖기 때문에 광전자 소자, 액정표시소자와 태양전지의 투명전극 재료로 이용되고 있으며, 향 후에도 수요는 계속 증가될 전망이다. 일반적으로 IZO 박막은 높은 열처리 온도에 의한 기판재료의 선택이 한정적인 단점이 있다. 따라서 최근에는 정밀하게 제어된 에너지를 가진 전자를 표면에 조사(E-beam irradiation)하여 박막의 물성을 개선하고 기판재료의 선택성을 넓히는 연구가 활발히 진행되고 있다 [1]. 본 연구에서는 RF Magnetron Sputtering 법을 이용하여 Glass 위에 IZO를 증착하였다. 스퍼터링타겟은 고순도 IZO 타겟을 이용하여 100 nm의 두께를 가지는 박막을 증착하였다. 증착된 IZO 박막에 E-beam Source ((주)인포비온)를 이용하여 E-beam irradiation energy 조건에 변화를 주어 박막의 물성 변화를 관찰하였다. IZO 박막의 두께를 측정하기 위해 SEM (Cross section)을 이용하였다. E-beam irradiation energy에 따른 가시광 영역(380~780 nm)에서의 광투 과도는 UV-Vis spectrometer를 사용하여 측정하였고, 전기적인 특성은 Hall measurement system 을 이용하여 측정하였다. 또한 박막의 결정성과 거칠기의 변화는 XRD (X-ray Diffraction)와 원자 간력현미경(Atomic Force Microscope; AFM)을 이용하여 측정하였다. Rf magnetron Sputtering 법을 이용하여 증착한 IZO 박막에 Post E-beam irradiation이 전기전도 및 광 투과특성과 결정성과 표면 조도를 향상시키는데 크게 기여함을 확인할 수 있었다.