• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.888-890
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the substrate temperature on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of $200^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly depending on the stoichiometry of ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.

• Laser Solutions
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• v.17 no.3
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• pp.19-23
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• 2014

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.329-330
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• 2008

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.161-166
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• 2016

We studied the effect of $Co^{60}$ gamma-radiation on the FBGs by a variation of grating the fabrication parameters. The FBGs were fabricated in a different UV KrF laser intensity using the same boron co-doped photo-sensitive fiber and exposed to gamma-radiation up to a dose of 33.8 kGy. According to the experimental data and analysis results, We confirmed that the laser intensity for grating inscription has a highly effect on the radiation sensitivity of the FBGs and the radiation-induced Bragg wavelength shift by the change of laser process condition showed a difference more than about 30 %.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1158-1163
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• 2002

An Ge/B-doped optical fiber with high photosensitivity was fabricated to induce large second-order optical nonlinearity by UV poling. It was found that long period fiber gratings were inscribed on the fiber by the 248 nm KrF excimer laser irradiation with pulse energy of 116 mJ/$cm^2$ and pulse frequency of 10 Hz without hydrogen loading treatment. The photosensitivity was measured by use of the long period fiber grating pair method and the refractive index change of 3.3$10{\times}^{-3}$ was found to be induced in the core of the optical fiber by the KrF excimer laser irradiation of 8.67 kJ/$cm^2$. An H-shaped optical fiber was also fabricated for the UV poling through optimization of the fiber drawing condition.

• Clean Technology
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• v.22 no.3
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• pp.203-207
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• 2016

Here, we report a novel fabrication technique for patchable organic lasing sheet based on non-volatile liquid organic semiconductors and freestanding polymeric film with high flexibility and patchability. For this work, we have fabricated the second-order DFB grating structure, which leads to surface emission, embedded in the freestanding polymeric film. Using an ultra-violet (UV) curable polyurethaneacrylate (PUA) mixture, the periodic DFB grating structure can be easily prepared on the freestanding polymeric film via a simple UV curing process. Due to unsaturated acrylate remained in the PUA mixture after UV curing, the freestanding PUA film provides adhesive properties, which enable mounting of the patchable organic lasing sheet onto non-flat surfaces with conformal contact. To achieve laser actions in the freestanding resonator structure, a composite material of liquid 9-(2-ethylhexyl)carbazole (EHCz) and organic laser dyes was used as the laser medium. Since the degraded active materials can be easily refreshed by a simple injection of the liquid composite, such a non-volatile liquid organic semiconducting medium has degradation-free and recyclable characteristics in addition to other strong advantages including tunable optoelectronic responses, solvent-free processing, and ultimate mechanical flexibility and uniformity. Lasing properties of the patchable organic lasing sheet were also investigated after mounting onto non-flat surfaces, showing a mechanical tunability of laser emission under variable surface curvature. It is anticipated that these results will be applied to the development of various patchable optoelectronic applications for light-emitting displays, sensors and data communications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.459-462
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• 1999

Recent advances in NLO Borate Crystals for UV Generation are reviewed with the particular emphasis on the technique to improve the life time of UV optics. The laser-damage resistance of CLBO and fused silica surfaces was successfully improved after removing polishing compound by ion beam etching. The polishing compound embedded in the CLBO and fused silica surfaces were to a depth of less than 100nm. We were able to remove polishing compound without degrading the surface condition when the applied ion beam voltage was less than 200 V. The laser-induced surface damage threshold of CLBO was improved up to 15J/$\textrm{cm}^2$(wavelength: 355 nm, pulse width: 0.85 ns)as compared with that of the as-polished surface (11 J/$\textrm{cm}^2$). The laser-induced surface damage of fused silica also increased from 7.5J/$\textrm{cm}^2$ to 15J/$\textrm{cm}^2$. For the irradiation of a 266 nm high-intensity and high-repetition laser light, the surface lifetime of CLBO and fused silica could be more doubled compared with that of the as-polished surface.

• Ceramist
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• v.20 no.4
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• pp.55-73
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• 2017

As one of the most versatile semiconductors, zinc oxide (ZnO) with one-dimensional (1-D) nanostructures has been significantly developed for the application of ultraviolet (UV) lasers, photochemical sensors, photocatalysts, and so on. Such 1-D nanowires could be easily achieved due to the anisotropic growth rate along the [0001] direction. However, such typical growth habit leads to decrease the surface area of the (0001) plane, which plays a central role in not only UV lasing action but also photocatalytic reaction. This fact lead us to develop ZnO crystal with enhanced polar surface area through crystal growth control. The purpose of this review is to provide readers a simple route to plate-type ZnO crystal with highly enhanced polar surfaces and their applications for UV-laser, photocatalyst, and antibacterial agents. In addition, we will highlight the recent study on pilot-scale synthesis of plate-type ZnO crystal for industrial applications.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.232-237
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• 1996

A 500 Hz repetition rate excimer laser was developed as light source for pollution lidar. In this paper, the high repetitive output characteristics, the gas flow loop structure, and CR(clearing ratio) characteristics were investigated. Our laser system was constructed compact structure with a streamline gas flow loop and UV preionization. The real gas volume of laser is 10 liter. At 500 Hz repetitive operation, we have obtained average power of 53 watt with KrF laser gas. The variation of laser output, CR, and active volume are $\pm$6.7%, 2.3, and 2.0(H)$\times$1.2(W)$\times$56(L)=134 ㎤, respectively. Laser output power is declined to half at 3$\times$$10^6$ shots.