• Title/Summary/Keyword: UNI

Search Result 1,612, Processing Time 0.028 seconds

A Study on the Design of Water Pollution Alarm System using Solar Cell (솔라셀을 적용한 수질오염 경보 시스템의 설계에 관한 연구)

  • Yoon, Seok-Am;Choi, Jang-Gyun;Yoon, Hyung-Sang;Kim, Min;Lee, Gi-Je;Cha, In-Su
    • Proceedings of the KIPE Conference
    • /
    • 1999.07a
    • /
    • pp.569-572
    • /
    • 1999
  • As the industry has been growing rapidly, the problem of environmental pollution has been on the rise seriously. In this paper, we used solar cells at the power supply unit of the equipment, which has been sold at present, for measuring the quality of water in order to complement the problem. Also, to get rid of the inconvenience that the examiners must go to the job site, check and collect the polluted water we set the goal at designing the water pollution alarm system which measures the quality of water automatically using one-chip microprocessor and materializing the program.

  • PDF

Insulation Reinforcement of the Electrical Power Cable Degradated by the Water Tree Using Silicon (실리콘을 이용한 수트리 열화된 전력 케이블의 절연 보강)

  • Kang, Hyeong-Gon;Park, Jun-Chae;Ko, Seok-Cheol;Lim, Sung-Hun;Lee, C.H.;Hanh, Y.B.;Han, B.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07a
    • /
    • pp.468-471
    • /
    • 2003
  • Fault of under ground power cable occurs usually from the water tree such as the vented tree, the bow tree and the water-rich halo. The water tree penetrates to the polyethylene cable insulations. Sometimes, the water tree also diffuses to mother cable in the substation. In this paper, instead of replacement of the faulty cable, we tried to cure an electrical power cable degraded by the water trees with silicon injection method. And measured the results with the isothermal relaxation current analysis method. After cable cure, Chonil line was improved from 2.27 to 1.96 in a phase, from 2.148 to 2.020 in b phase, and from badness to 2.192 in c phase. And Keumam line was also improved from 2.419 to 1.920 in a phase, from 2.301 to 2.000 in b phase, and from badness to 1.957 in c phase.

  • PDF

Electrical Properties of Polyethyleneterephthalate Film for Transducer (변환기용 PET 박막의 전기적 특성)

  • Ko, Keel-Young;Kim, Gyun-Sik;Byun, Doo-Gyoon;Park, Ha-Vong;Lee, Chung-Ho;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07a
    • /
    • pp.510-513
    • /
    • 2003
  • In this paper, we have investigated the physical, dielectric and electrical conduction properties of polyethylene terephthalate(PET) film due to temperature variation. From FT-IR spectrum as an analysis of physical properties, the strong absorption in wavenumber 1019[$cm^{-1}$], 1266[$cm^{-1}$], and 1752[$cm^{-1}$] observed by the C=O and benzene ring. the characteristics of volume resistivity used to highmegohm meter is measured from 1 to 10 minutes when the specimen applied the voltage according to the step voltage appling method. and dielectric characteristics were measured in the temperature range from room temperature to 120[$^{\circ}C$] due to frequency variation.. also we measured in the voltage rang of 1[V] to 20[V] according to the voltage application method.

  • PDF

Operational characteristic of flux-lock type HTSC-FCL (자속구속형 고온초전도 전류제한기 동작 특성)

  • Lim, Sung-Hun;Choi, Hyo-Sang;Kang, Hyeong-Gon;Ko, Seok-Cheol;Lee, Jong-Hwa;Choi, Myung-Ho;Song, Jae-Joo;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05b
    • /
    • pp.20-23
    • /
    • 2003
  • The operational characteristics of flux-lock type high-Tc superconducting fault currentlimiters(HTSC-FCLs) was described and currents equation at each coil was derived from equivalent circuit. $YBa_{2}Cu_{3}O_{7-x}$(YBCO) thin film was used as the current limiting elements of the flux-lock type HTSC-FCL, which were fabricated by etching the YBCO thin film into 2 mm wide and 420 mm long meander line consisting of foureen stripes with different length. The 2nd peak on the current of coil 2 after a fault disappeared by current of the 3rd winding, which was installed in the flux-lock type HTSC-FCL.

  • PDF

Microstructure and Properties of ST-based Ceramic Thin Film (ST계 세라믹 박막의 미세구조 및 특성)

  • Kim, J.S.;Oh, Y.C.;Cho, C.N.;Shin, C.G.;Song, M.J.;Choi, W.S.;Kim, K.J.;Kim, C.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.05b
    • /
    • pp.106-109
    • /
    • 2005
  • The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

  • PDF

Low Temperature Sintering and Microwave Dielectric Properties of Alumina-Silicate/Zinc Borosilicate Glass Composites (Alumina-silicate/zinc borosilicate glass 복합체의 저온 소결 및 유전 특성)

  • Kim, Kwan-Soo;Um, Gyu-Ok;Yoon, Sang-Ok;Kim, Shin;Kim, Yun-Han;Kim, Kyung-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.314-314
    • /
    • 2008
  • The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

  • PDF

The influence of $O_2$ concentration on the generation of $NO_2$ by using the wire-plate reactor (선대 평판형 반응기에서 $NO_2$ 생성에 미치는 $O_2$의 영향)

  • Park, Jae-Youn;Kim, Sung-Jin;Kim, Jong-Dal;Lee, Sun-Jae;Ha, Sang-Tae;Han, Sang-Bo;Lee, Dong-Hoon
    • Proceedings of the KIEE Conference
    • /
    • 2000.07c
    • /
    • pp.2050-2052
    • /
    • 2000
  • In this paper, the effect of $O_2$ concentration on NO removal and $NO_2$ generation by corona discharge from simulated flue gas was measured and estimated for the wire-plate reactor. $NO_2$ removal rate was 0$\sim$30[%] under about 3.4[%] of oxygen concentration, however, it was difficult to remove NOx over 3.4[%] of oxygen concentration. It may be due to generate $NO_2$ from $N_2$ and $O_2$ molecules and converse NO to $NO_2$ by 0 and $O_3$. Magnetic field applied to electric field in plasma was very effective for NOx removal under 2[%] of $O_2$ concentration.

  • PDF

Use of a capacitance voltage technique to study copper drift diffusion in low-k polyimide (C-V Technique을 이용한 low-k polyimide로의 구리의 drift diffusion 연구)

  • Choi, Yong-Ho;Lee, Heon-Yong;Kim, Jee-Gyun;Kim, Jung-Woo;Kim, Yoo-Kyuong;Park, Jin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05c
    • /
    • pp.137-140
    • /
    • 2003
  • Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

  • PDF

Operational Characteristics in Integrated Three-Phase Flux-Lock Type SFCL (3상 일체화된 자속구속형 고온초전도 전류제한기의 동작특성)

  • Lim, Sung-Hun;Han, Tae-Hee;Park, Hyoung-Min;Cho, Yong-Sun;Song, Jae-Joo;Choi, Myoung-Ho;Hwang, Jong-Sun;Choi, Hyo-Sang;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.12a
    • /
    • pp.112-113
    • /
    • 2006
  • The operational characteristics of the integrated three-phase flux-lock type superconducting fault current limiter (SFCL) were analyzed. The suggested three-phase SFCL consisted of a three-phase flux-lock reactor and three high-$T_c$ superconducting (HTSC) elements. The former has three windings wound on an iron core, each of which has the same turn's ratio between coil 1 and coil 2. The latter are connected in series with coil 2 of each phase. The integrated three-phase flux-lock type SFCL showed the operational characteristics that the fault phase could affect the sound phase, which resulted in quenching the HTSC element in the sound phase. Through the computer simulation applying numerical analysis for its three-phase equivalent circuit, the fault current limiting characteristics of the integrated three-phase flux-lock type SFCL according to the ground fault types were compared.

  • PDF

Fabrication and Dielectric Properties of $(Sr_{1-x}Ca_x)TiO_3$ Ceramic Thin Films (($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 제조 및 유전특성)

  • Kim, J.S.;Cho, C.N.;Oh, Y.C.;Shin, C.G.;Kim, C.H.;Song, M.J.;So, B.M.;Choi, W.S.;Lee, J.U.
    • Proceedings of the KIEE Conference
    • /
    • 2003.07c
    • /
    • pp.1496-1498
    • /
    • 2003
  • The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].

  • PDF