• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.142.1-142.1
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• 2016

We present bulk diffusion rates of hydroxide ions in amorphous solid water (ASW) at 135 ~ 160 K. Previous researches showed that the diffusion mechanism of hydroxide is different from one of hydronium ions, and this implies that they have different diffusion rates. In ultra-high vacuum (UHV) chamber, low-energy scattering (LES) was used to measure ion population and temperature-programmed desorption (TPD) was conducted for measuring ASW thicknesses. To determine the diffusion rates, a simple model for $H_2O/NaOH/H_2O$ sandwich films was developed using Fick's second law. The measured surface population of hydroxide ions as a function of time was well fitted to the model, and the rates were well agreed to an Arrhenius equation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.279-279
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• 2012

In order to estimate the average migration lengths of $H_3O^+$ ions in amorphous ice, we conducted experiments of reactive ion scattering (RIS), low energy sputtering (LES), and reflection absorption IR spectroscopy (RAIRS) with an ultra-high vacuum (UHV) chamber. Dopped water-ice films were grown on the clean surface of Ru single crystal and analyzed with RIS, LES and RAIRS methods. The population changes of probe molecules, which were buried at a controlled distance from the surface, were monitored by those methods so that we can mesure the migration efficiencies. From the measured efficiencies, we evaluated the average migration lengths. This result is expected to give the information about the dynamics of proton in water-ice film.

• 전기전자학회논문지
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• 제23권3호
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• pp.811-816
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• 2019

초고진공 화학기상증착장치(UHV-CVD)에 의해 성장된 실리콘-흡착된 산소(Si-O) 초격자가 실리콘 양자전자소자를 위한 에피택셜 장벽으로 소개되었다. 전류-전압 측정 결과 높은 브레이크다운 전압을 갖는 매우 안정하고 양호한 절연특성을 나타내었다. 에피택셜 성장된 Si-O 초격자는 SOI(silicon on insulator)를 대체할 수 있는 절연층으로도 사용될 수 있음을 보여준다. 이 두꺼운 장벽은 전계효과트랜지스터(FET)의 절연 게이트로 유용하게 사용될 수 있어 FET 위에 또 다른 FET를 제작할 수 있으므로 미래 실리콘계 3차원 집적회로의 궁극적인 목표에 한층 더 다가갈 수 있는 가능성을 보여주는 것이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.312-315
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• 2004

The monolayer of oxygen atoms sandwiched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multilayer Si-O structure forms a new type of superlattice, semiconductor-atomic superlattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (Ⅰ-Ⅴ) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1871-1874
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• 2005

The direct write FIB technology has several advantages over contemporary micro-machining technology, including better feature resolution with low lateral scattering and capability of maskless fabrication. Therefore, the application of FIB technology in micro fabrication has become increasingly popular. In recent model of FIB, however the feeding system has been a very coarse resolution of about a few ${\mu}m$. Our research is the development of nano stage of 200mm strokes and 10nm resolutions. Also, this stage should be effectively operating in ultra high vacuum of about $1x10^{-7}$ torr. This paper presents the discussion and results of CAE of the 2 axes stages. we have estimated the stable static and dynamic characteristics for dual servo system. Therefore the 2 axes stages developed and future work are introduced at the end of the paper.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.115-118
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• 2005

Currently, molecular devices are reported utilizing active self-assembled monolayers (SAMs) containing the nitro group as the active component, which has active redox centers [1]. SAMs are ordered molecular structures formed by the adsorption of an active surfactant on a solid surface. The molecules will be spontaneously oriented toward the substrate surface and form an energetically favorable ordered layer. During this process, the surface-active head group of the molecule chemically reacts with and chemisorbs onto the substrate In this paper, the electrical properties of the 4'4- di(ethynylphenyl)-2'-nitro-1-benzenethiolate was confirmed. This material is well known as a conducting molecule having possible application to molecular level negative differential resistance (NDR) device. To deposit the self-assembly monolayers onto the gold electrode, the prefabricated Au(1 l l) substrates were immersed into 0.5[mM/l] self-assembly molecule in THF solution. Then, the electrical properties and surface morphologies of 4' 4-di(ethynylphenyl)-2' -nitro-1-benzenethiolate were measured by using the ultra-high vacuum scanning tunneling microscopy (UHV-STM).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1390-1391
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• 2006

본 연구에서는 전도성 분자로 잘 알려진 4,4-Di(ethynyl phenyl) -2'-nitro-1-(thioacetyl)-benzene(nitro - benzene) 분자를 Au (111) 표면에 자기조립하고, ultra high vacuum scanning tunneling microscopy (UHV-STM)을 사용하여 STM tip과 sample 사이의 거리를 변화시키면서 전기전도 특성을 측정하였다. Au 기판제작은 연증착시스템 (Thermal Evaporation System)으로 제작하였으며, piranha 용액 ($H_{2}SO_{4}\;:\;H_{2}O_{2}$=3:1)을 사용하여 전치리한 후, 자기조립 단분자막 (SAMs)을 형성하였다. 먼저 1-octanethiol을 ethanol solution용액 1 mM/L 농도에서 24시간 동안 자기조립한 후에, ethanol를 solution 용액으로 이용하여 nitro-benzene를 0.1 nM/L 농도로 암실에서 30분간 자기조립 하였다. 자기조림 후 solution을 제거하기 위해 에탄올로 세척하여 $N_2$로 건조시켰다. 이 조건하에서 UHV-STM을 사용하여 nitro-benzene SAMs의 실시간 모폴로지의 변화에 따른 nitro-benzene의 전기전도 특성을 STM tip - SAMs - Au 기판의 수직구조로 STM tip과 nitro-benzene의 거리를 변화시키면서, tunneling current을 조사하였다. 측정 결과 Z-position 변화에 대한 tunneling current와 resistance의 변화를 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.141-141
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• 1999

전기화학과 초고진공(ultra-high vacuum, UHV) 분광법을 이용하여 고체/액체의 계면에서 일어나는 현상을 분자단위에서 이해하고 조절하기 위한 연구를 수행하였다. 이들 중 전기화학으로 형성된 구리 및 은 금속(sub)monlayer 박막을 그 예로 선택하여 소개한다. 초박막 금속의 흡착량은 cyclic voltammogram과 새로 개발된 Auger electron spectroscopy (AES) 정량법을 통해 얻어졌고, 이 값들은 low energy electron diffraction (LEED) 및 in-situ atomic force microscopy (AFM)법을 이용한 구조 분석결과와 비교되어졌다. 또한 화학상태를 확인하기 위하여 core-level electron energyy loss spectroscopy (CEELS)를 사용하였다. 먼저 황산 전해질에서 금(111) 단결정 전극상에 전기화학적으로 형성된 굴의 계면특성을 조사하였다. 특정 전위값에서 2/3 ML의 구리와 1/3 ML의 음이온이 상호 흡착하여 ({{{{ SQRT { 3} }}$\times${{{{ SQRT { 3} }}) 격자 구조를 보였고, 전위값이 커지거나 줄어들면, 이 구조가 사라지는 현상이 관찰되었다. 즉 이 ({{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}}) 흡착구조는 첫 번째 UPD underpotential deposition) 피크에 특이하게 관련되어 있음을 알 수 있었다. 금속 초박막 형성에 미치는 음이온의 영향을 좀 더 확인하기 위해 초박막 은이 증착된 금 단결정 전극상의 황산 음이온에 관하여 연구하였다. 은의 증착이 일어날 수 없는 양전위값 영역에서 ({{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}})의 규칙적인 음이온의 구조를 보였다. 그리고 은의 장착은 세척 과정과 용액의 농도에 따라 p(3$\times$3)과 p(5$\times$5)의 규칙적인 두가지 구조를 가졌다. in-situ AFM에서는 p(3$\times$3)의 은 증착 구조만 나타났고, 음 전위값으로 옮겨가면 p(1$\times$1) 구조로 바뀌었다. ex-situ 초고진공 결과와 이 AFM의 in-situ 결과를 상호 비교 논의할 것이다. 음이온의 흡착이 없는 묽은 플로르산(HF) 전해질에서 은은 전위값을 음전위 쪽으로 이동해 감에 따라 p(3$\times$3), p(5$\times$5), (5$\times$5), (6$\times$6), 그리고 (1$\times$1)의 연속적 구조 변화를 보였다. 이 다양한 구조들을 AES로부터 얻어진 표면 흡착량과 연결시켰더니 정량적으로 잘 일치되는 결과를 보였다. 전기화학적인 증착에서는 기존의 진공 증착과 비교할 때 음이온의 공흡착이 금속 초박막 형성 메카니즘에 큰 영향을 미침을 알 수 있었다. 또한 은의 전기화학적 다층박막 성장은 MSM (monolayer-simultaneous-multilayer) 메카니즘을 따름을 확인하였다. 마지막으로 구조 및 양이 규칙적으로 조절되는 전극의 응용가능성이 간단히 논의될 것이다.