• ETRI Journal
• /
• v.37 no.2
• /
• pp.241-250
• /
• 2015

In this paper, we present novel high-speed transmission schemes for high-speed ultra-high frequency (UHF) radio-frequency identification communication. For high-speed communication, tags communicate with a reader using a high-speed Miller (HS-Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse-interval encoding (E-PIE). E-PIE can provide up to a two-fold faster data rate than conventional pulse-interval encoding. Using HS-Miller encoding and orthogonal multiplexing techniques, tags can achieve a two- to three-fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high-speed backscatter based on an HS-Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.6
• /
• pp.817-823
• /
• 2011

This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.75-78
• /
• 2001

Recently, the HFPD measurement testing is widely used in partial discharge measurement of HV machines because HFPD measurement testing receives less influence of external noise and has a merit of good sensitivity. Also HFPD testing is able to offer the judgement standard of degradation level of HV machine and can detect discharge signals in live-line. Therefore it is very useful method compare to previous conventional PD testing method and effective diagnosis method in power transformer that requires live-line diagnosis. But partial discharges have very complex characteristics of discharge pattern so it is required continuous research to development of precise analysis method. In recent, the study of partial discharge is carrying out discover of initial defect of power equipment through condition diagnosis and system development of degradation diagnosis using HFPD(High Frequency Partial Discharge) detection. In this study, simulated transformer is manufactured and HFPD occurred from transformer is measured with broad band antenna in real time, the degradation grade of transformer is analyzed through produced patterns in simulated transformer according to applied voltages.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.306-306
• /
• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• The Journal of the Korea Contents Association
• /
• v.7 no.3
• /
• pp.42-49
• /
• 2007

This paper implements RFID(radio-frequency identification)System to which the system was apply SS(Spread Spectrum) method. The system designed by using the algorithm for microprocessor with PLL of the receiver, PN spread, modulation and demodulation of the transceiver, and transistor amplifier for the output of stabilized BPSK (Binary Phase Shift Keying) signal. furthermore, it reduced the interference of the signal by designing the micro-strip narrow banded patch antenna, which is convenient for printing and producing, and decreased the volume of filter size in the system. It is also designed for the lower powered system with the possible application to UHF band of $860\sim930MHz$ for the international standard frequency band, which is the quota share of RFID distribution system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05a
• /
• pp.50-54
• /
• 2000

Recently, the HFPD measurement testing is widely used in partial discharge measurement of HV machines because HFPD measurement testing receives less influence of external noise and has a merit of good sensitivity. Also HFPD testing is able to offer the judgement standard of degradation level of HV machine and can detect discharge signals in live-line. Therefore it is very useful method compare to previous conventional PD testing method and effective diagnosis method in power transformer that requires live-line diagnosis. But partial discharges have very complex characteristics of discharge pattern so it is required continuous research to development of precise analysis method. In recent, the study of partial discharge is carrying out discover of initial defect of power equipment through condition diagnosis and system development of degradation diagnosis using HFPD(High Frequency Partial Discharge) detection. In this study, simulated transformer is manufactured and HFPD occurred from transformer is measured with broad band antenna in real time, the degradation grade of transformer is analyzed through produced patterns in simulated transformer according to applied voltages.

• Journal of the Korea Computer Industry Society
• /
• v.2 no.9
• /
• pp.1147-1154
• /
• 2001

In this paper, we make plans for facilities, the 8-VSB DTV transmission system, installed in the near future, based on presently NTSC TV operating it. First of all we estimate transmission power for analog NTSC, digital 8-VSB terrestrial broadcasting and the effective condition of optimal receiving power result from it. It's also to estimate optimal receiving condition by using Longley-Rice's Field Strength calculating method that is to guess a profile between transmitting station and many receiving points. The 8-VSB DTV Propagation aims to high-speed transmission rates of 19.39Mbps datum to enable HDTV(High Definition Television) at NTSC 6MHz bandwidth. First of all, an optimization of field strength between transmission station and receiver must deal with considerable. Because of these reasons, 8-VSB DTV transmission needs effective extension for NTSC TV service coverage. Finally we present the transmitting output that is expected in changing NTSC VHF to DTV UHF for maintaining the transmitting output of NTSC TV that is equal to 8-VSB DTV in service coverage.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.7 s.361
• /
• pp.9-15
• /
• 2007

In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.

• Journal of Advanced Navigation Technology
• /
• v.17 no.5
• /
• pp.516-523
• /
• 2013

In this paper, The path loss model of Air Traffic Control(ATC) telecommunication radio channel has been studied at the Incheon International Airport(IIA) with the terminal with two antlers. We measured two frequencies among VHF/UHF channel bands. The transmitting site radiated the Continuous Wave(CW). The propagation measurement was taken using the moving vehicle equipped with receiver and antenna. The transmitting power, frequency and antenna height are the same as the current operating condition. The path loss exponent and intercept parameters were extracted by the basic path loss model and hata model. The path loss exponents at passager terminal areas were 3.32 and 3.10 respectively in 128.2 MHz and 269.1 MHz. The deviation of prediction error is 9.69 and 9.65. The new path loss equation at the terminal area was also developed using the derived path loss parameters. The new path loss was compared with other models. This result will be helpful for the ATC site selection and service quality evaluation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.8
• /
• pp.694-700
• /
• 2009

In this paper, we propose a RFID tag antenna with low performance degradation due to nearby dielectric materials. The proposed antenna is designed to be appropriate for ink printing fabrication. The antenna is designed to operate in UHF band of $860{\sim}960$ MHz. The antenna uses a T-matching network in the middle of the main body and two parasitic patches in vicinity for complex conjugate matching with a commercial tag chip. In addition, the two parasitic patches induce currents at different dielectric constants of nearby dielectric materials. This can minimize the performance degradation due to nearby dielectric materials. The measured results show the half power matching bandwidth from 844 MHT to 1,268 MHz. It exhibits the reading distance of about 3.5 m in free space when the tag antenna is used with the commercial reader antenna (transmitting power of 20 dBm and the reader antenna gain of 6 dBi). When the tag is attached on dielectric materials of wood and FR4, the resulting reading distances are 2.61 m and 2.51 m, respectively.