• Journal of Advanced Navigation Technology
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• v.23 no.1
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• pp.90-96
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• 2019

LPWA is a cost-effective and time-saving technology with wide coverage. However, the LPWA is an ISM band that uses UHF radio waves, and its performance is very poor indoors because of its strong linearity. But, because of the possibility of achieving high performance compared to other communication in the room, this paper has studied the indoor communication performance by applying LoRa in LPWA technologies. After installing the data receiving module on the 4th floor, the transmission module was placed at the end of the building from the same floor to the 1st floor, and the data was collected. As a results, it installed on the 1st floor can be collected data with 98 ~ 99% probability, and the lowest RSSI is about -116dBm. Thus, considering the specification of LoRa with a maximum reception sensitivity -136dBm when the spreading factor is 12, the application of LPWA in the industrial field can be fully considered.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.211-215
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• 2013

Partial discharge diagnosis techniques using ultra high frequencies do not affect load movement, because there is no interruption of power. Consequently, these techniques are popular among the prevention diagnosis methods. For the first time, this measurement technique has been applied to the GIS, and has been tested by applying an extra high voltage switchboard. This particular technique makes it easy to measure in the live state, and is not affected by the noise generated by analyzing the causes of faults ? thereby making risk analysis possible. It is reported that the analysis data and the evaluation of the risk level are improved, especially for poor location, and that the measurement of Ultra high frequency (UHF) partial discharge of the real live wire in industrial switchgear is spectacular. Partial discharge diagnosis techniques by using the Ultra High Frequency sensor have been recently highlighted, and it is verified by applying them to the GIS. This has become one of the new and various power equipment techniques. Diagnosis using a UHF sensor is easy to measure, and waveform analysis is already standardized, due to numerous past case experiments. This technique is currently active in research and development, and commercialization is becoming a reality. Another aspect of this technique is that it can determine the occurrences and types of partial discharge, by the application diagnosis for live wire of ultra high voltage switchgear. Measured data by using the UHF partial discharge techniques for ultra high voltage switchgear was obtained from 200 places in Gumi, Yeosu, Taiwan and China's semiconductor plants, and also the partial discharge signals at 15 other places were found. It was confirmed that the partial discharge signal was destroyed by improving the work of junction bolt tightening check, and the cable head reinforcement insulation at 8 places with a possibility for preventing the interruption of service. Also, it was confirmed that the UHF partial discharge measurement techniques are also a prevention diagnosis method in actual industrial sites. The measured field data and the usage of the research for risk assessment techniques of the live wire status of power equipment make a valuable database for future improvements.

• 한국ITS학회:학술대회논문집
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• 2008.11a
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• pp.570-574
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• 2008

The 'gate non-stop system utilizing RFID (900MHz)', which is the core of this research, is the system which connects RFID to recognize the vehicle information without stopping when a vehicle (trailer) passes a gate to carry in or out containers in a terminal and automatically provides the container information provided by the terminal for the RFLDU device installed in the vehicle.In order to design and implement this, the RFID technical section uses a UHF band (900MHz) RFID tag and a reader and implements a RFID middleware and an application program for smooth data collection and execution (operation). In addition, the system stability was verified through experiments and operations of the system implemented in this research at real harbors/quays, and based on the verified result, the maximization of vehicle (trailer) and terminal productivity and the reduction of distribution cost are expected.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.52-58
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• 2009

We propose a folded monopole antenna with loads, and analyze the roles of design parameters which affect the return loss of the proposed antenna. VSWR < 3 bandwidth of the antenna is 30 ~ 2000 MHz, ranging from the HF/VHF/UHF bands. For operating travelling antenna, we connect six loads at the end of the antenna. The reflected wave is drastically reduced due to the six loads. For improved return loss properties, we use Klopfenstein tape that determine positions and values of six loads. The propose antenna has omni-directional radiational patterns like that of conventional monopole antennas. For wideband impedance transformation, we use the balun which operating frequency region is 10 ~ 1900 MHz. We expect the proposed antenna has important role for the wideband and multi-rold multi-functional communication systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2293-2298
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• 2011

In this paper, A tag antenna structure for RFID application with resonant frequency of 920MHz is proposed using the meander line technique and Evolution Strategy. Miniaturization structure design for a tag antenna is performed by structure combining the half-wave dipole with a meander line. To achieve this, an interface program between a commercial EM analysis tool and the optimal design program is made for implementing the evolution strategy technique that seeks a global optimum of the objective function through the iterative design process consisting of variation and reproduction. The optimized tag antenna size is 63mm ${\times}$ 15mm ${\times}$ 1mm. And the proposed antenna is realized on FR-4 substrate (${\epsilon}_r=4.4$, $tna{\delta}=0.02$).

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1556-1557
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• 2006

Since 1996, KEPCO has been operating a wide range lightning detection system, LPATS, and been accumulating relative application technics and statistical analysis skills. So, KEPRI already has its own basis to develope more accurate advanced detection technology and references to do comparative study. For Three-dimensional imaging of lightning channels, UHF/VHF antenna systems were installed at 2 sites. The distance between two sites is about 30 km. In this paper, we would like to introduce about our system and its results.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.4
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• pp.71-75
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• 2008

A folded monopole antenna is proposed for mobile communication applications. The proposed antenna covers CDMA and GSM at low frequency band, and it has a wide bandwidth (6.85 GHz) at high frequency band to cover GPS, DCS, USPCS, UHfS, WLAN (2.4, 5.2, 5.8 GHz), and the future application of IEEE 802.16e mobile WiMAX.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.15 no.2
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• pp.67-73
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• 2009

The introduction of radio frequency identification (RFID) technology into cold chain system will be essentials for the better quality preservation of chilled products in the near future. The object of this study is to analyze the trends of international standardization activity for cold chain system and RFID packaging. The standardization of RFID technology is related to SC31 of ISO/IEC JTC1. The established standard from EPCglobal includes the air interface of UHF substitute actors, the control of EPC tag data and the event collected from RFID readers, the directory services and information storage of ONS and EPCIS, and securities. Also, EPC standards include the sensor functions of the cold chain. In Korea, the RFID packaging related techniques and their engineering standard are less studied as compared with Europe or North America. For effective application of RFID in the cold chain and packaging, scientific and systematic researches on RFID, including technical standards for domestic RFID frequency, will be key elements for preoccupation of these application techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.