• Title/Summary/Keyword: UBM

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Effect of Shearing Speed on High Speed Shear Properties of Sn1.0Ag0.5Cu Solder Bump on Various UBM's (다양한 UBM층상의 Sn0Ag0.5Cu 솔더 범프의 고속 전단특성에 미치는 전단속도의 영향)

  • Lee, Wang-Gu;Jung, Jae Pil
    • Korean Journal of Metals and Materials
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    • v.49 no.3
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    • pp.237-242
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    • 2011
  • The effect of shearing speed on the shear force and energy of Sn-0Ag-0.5Cu solder ball was investigated. Various UBM (under bump metallurgy)'s on Cu pads were used such as ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold; Ni/Pd/Au), ENIG (Electroless Nickel, Immersion Gold; Ni/Au), OSP (Organic Solderability Preservative). To fabricate a shear test specimen, a solder ball, $300{\mu}m$ in diameter, was soldered on a pad of FR4 PCB (printed circuit board) by a reflow soldering machine at $245^{\circ}C$. The solder bump on the PCB was shear tested by changing the shearing speed from 0.01 m/s to 3.0 m/s. As experimental results, the shear force increased with a shearing speed of up to 0.6 m/s for the ENIG and the OSP pads, and up to 0 m/s for the ENEPIG pad. The shear energy increased with a shearing speed up to 0.3 m/s for the ENIG and the OSP pads, and up to 0.6 m/s for the ENEPIG pad. With a high shear speed of over 0 m/s, the ENEPIG showed a higher shear force and energy than those of the ENIG and OSP. The fracture surfaces of the shear tested specimens were analyzed, and the fracture modes were found to have closer relationship with the shear energy than the shear force.

Conductive and Mechanical Properties Study of Ti-doped DLC (ta-C:Ti) Film on Semiconductor Probe through Taguchi Bobust Design (다구찌 강건 설계를 통한 반도체 Probe상 Ti 도핑된 DLC(ta-C:Ti) 코팅 막의 전도성 및 기계적 물성 연구)

  • Kim, Do-young;Shin, Jun-ki;Jang, Young-Jun;Kim, Jongkuk
    • Tribology and Lubricants
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    • v.38 no.6
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    • pp.274-280
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    • 2022
  • There is a problem that semiconductor probe pin has a short lifespan. In order to solve this problem, Ti having excellent conductivity was doped to tetrahedral amorphous carbon (ta-C) having excellent hardness and abrasion resistance. This experiment was planned through the Taguchi robust design to determine the effect of the control factor of the ta-C:Ti coating film. The effect and contribution of control factors such as Unbalanced Magnetron Sputter(UBM) discharge current, arc discharge current, temperature, and bias voltage on ta-C:Ti characteristics were analyzed from the perspective of electrical and mechanical characteristics. The UBM discharge current was set to 4, 6, and 8 A. The main control factor of thickness and resistance is the UBM discharge current, and the thickness increased and the resistance decreased as the current increased. The decrease in resistance is due to the increase in the Ti content of the ta-C:Ti coating film. The arc discharge current was set to 60, 80, and 100 A. The main control factor of hardness and wear is the arc discharge current, and as the current rises, the hardness increases and the wear area decreases. This is due to the increased ta-C content of the ta-C:Ti coating film. Since resistance and wear are important for Probe Pin, the optimal level is set from the perspective of resistance and wear and a confirmation experiment is conducted.

A PCA-based MFDWC Feature Parameter for Speaker Verification System (화자 검증 시스템을 위한 PCA 기반 MFDWC 특징 파라미터)

  • Hahm Seong-Jun;Jung Ho-Youl;Chung Hyun-Yeol
    • The Journal of the Acoustical Society of Korea
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    • v.25 no.1
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    • pp.36-42
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    • 2006
  • A Principal component analysis (PCA)-based Mel-Frequency Discrete Wavelet Coefficients (MFDWC) feature Parameters for speaker verification system is Presented in this Paper In this method, we used the 1st-eigenvector obtained from PCA to calculate the energy of each node of level that was approximated by. met-scale. This eigenvector satisfies the constraint of general weighting function that the squared sum of each component of weighting function is unity and is considered to represent speaker's characteristic closely because the 1st-eigenvector of each speaker is fairly different from the others. For verification. we used Universal Background Model (UBM) approach that compares claimed speaker s model with UBM on frame-level. We performed experiments to test the effectiveness of PCA-based parameter and found that our Proposed Parameters could obtain improved average Performance of $0.80\%$compared to MFCC. $5.14\%$ to LPCC and 6.69 to existing MFDWC.

SVM Based Speaker Verification Using Sparse Maximum A Posteriori Adaptation

  • Kim, Younggwan;Roh, Jaeyoung;Kim, Hoirin
    • IEIE Transactions on Smart Processing and Computing
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    • v.2 no.5
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    • pp.277-281
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    • 2013
  • Modern speaker verification systems based on support vector machines (SVMs) use Gaussian mixture model (GMM) supervectors as their input feature vectors, and the maximum a posteriori (MAP) adaptation is a conventional method for generating speaker-dependent GMMs by adapting a universal background model (UBM). MAP adaptation requires the appropriate amount of input utterance due to the number of model parameters to be estimated. On the other hand, with limited utterances, unreliable MAP adaptation can be performed, which causes adaptation noise even though the Bayesian priors used in the MAP adaptation smooth the movements between the UBM and speaker dependent GMMs. This paper proposes a sparse MAP adaptation method, which is known to perform well in the automatic speech recognition area. By introducing sparse MAP adaptation to the GMM-SVM-based speaker verification system, the adaptation noise can be mitigated effectively. The proposed method utilizes the L0 norm as a regularizer to induce sparsity. The experimental results on the TIMIT database showed that the sparse MAP-based GMM-SVM speaker verification system yields a 42.6% relative reduction in the equal error rate with few additional computations.

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Electromigration of Sn-3.5 Solder Bumps in Flip Chip Package (플립칩 패키지내 Sn-3.5Ag 솔더범프의 electromigration)

  • 이서원;오태성
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.4
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    • pp.81-86
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    • 2003
  • Electromigration of Sn-3.5Ag solder bump was investigated using flip chip specimens which consisted of upper Si chip and lower Si substrate. While the resistance of the flip chip sample did not almost change until the time right before the failure, the resistivity increased abruptly at the moment when complete failure of the solder joint occurred in the flip chip sample. At current densities of $3\times 10^4$$4\times 10^4$A/$\textrm{cm}^2$, the activation energy for electromigration of the Sn-3.5Ag solder bump was characterized as ∼0.7 eV. Failure of the Sn-3.5Ag solder bump occurred at the solder/UBM interface due to the formation and propagation of voids at cathode side of the solder bump.

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Microstructures and Shear Strength of Sn-Zn Lead-free Solder Joints (Sn-Zn계 무연 솔더접합부의 전단강도와 미세구조)

  • 김경섭;양준모;유정희
    • Journal of Welding and Joining
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    • v.21 no.7
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    • pp.59-64
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    • 2003
  • Microstructure and shear strength of Sn-Zn lead-free solders and Au/Ni/Cu UBM joint under thermal aging conditions was investigated. The samples were aged isothermally at 10$0^{\circ}C$ and 15$0^{\circ}C$ for 300, 600, and 900 hours. The IMCs(Intermetallic Compound) at the interface between solder and UBM were examined by FESEM and TEM. The results showed that the shear strength was decreased with aging time and temperature. The solder ball with high activated RA flux had about 8.2% higher shear strength than that of RMA flux. Poor wetting and many voids were observed in the fractured solder joint with of RMA flux. The decreased shear strengths were caused by IMC growth and Zn grain coarsening. Zn reacted with Au and then was transformed to the $\beta$ -AuZn compound. Although AuZn grew first, $r-Ni_5Zn_{21}$ compounds were formed with aging time. The layers indicated by $Ni_5Zn_{21}(1)$, (2), and (3) were formed with the thickness of ∼0.7 ${\mu}{\textrm}{m}$, ∼4 ${\mu}{\textrm}{m}$, and ∼2 ${\mu}{\textrm}{m}$, respectively.