• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Journal of Magnetics
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• v.8 no.2
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.77-80
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• 1995

GaSb crystals were grown by the vertical Bridgman method. P-type GaSb crystals were grown with Ga:Sb=1:1 at % ratio without dopants and with Te, respectively. Also, GaSb:Te crystals were investigated. Lattice constants were 6.117${\AA}$ for p-type. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p≡8 x $10^{16}$$cm^{-3}$, p≡0.20$\Omega$-cm, ${\mu}$$_{n}$≡$400\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡1 x $10^{17}$$cm^{-3}$, p≡0.15 $\Omega$-cm, ${\mu}$$_{n}$≡$500\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type at 300K. In case of treating with metal ion of $Ru^{+3}$, $Pt^{+1}$, p≡2 x $10^{17}$$cm^{-3}$, p≡0.08$\Omega$-cm, ${\mu}$$_{n}$≡420$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡2.5 x $10^{17}$$cm^{-13}$, p≡0.07 $\Omega$-cm, ${\mu}$$_{n}$≡520$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type were obtained.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Textile Coloration and Finishing
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• v.6 no.1
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• pp.62-70
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• 1994

Silk fibroin was dissolved in 9.3 M LiBr aqueous solution at 4$0^{\circ}C$ for 1 hour. The dissolved silk fibroin was regenerated by casting the dialyzed solution into the membrane. The freshly prepared silk fibroin membrane was soluble in water and was. mainly consisted of random coil conformation. By the treatments in saturated water vapor at 3$0^{\circ}C$ and in 75% ethanolic aqueous solution (V/V), the insoluble membranes were obtained and the structure and morphology of those were investigated for the structure by means of X-ray diffraction analysis, infrared spectroscopy, thermal analysis. Rheovibron and scanning electron micrograph. Silk II type crystals were obtained by treating amorphous silk fibroin membrane in the random coil conformtion with 75% ethanol solution(V/V). Crystallization to silk II type crystals occured even after a few minutes, and a large number of silk II type crystals were formed after 30 mins. On the other and, the membrane treated in saturated water vapor was composed of the mixtures of silk I and silk II type crystals. A large number of silk I and silk II type crystals were formed after 24 hours. The micro brownian motion in the amorphous regions of silk fibroin membrane started at about 175~185$^{\circ}C$. $\alpha$ dispersion appeared at about 20$0^{\circ}C$ in the amorphous membrane, and at about 22$0^{\circ}C$ in the crystalline membrane. The crystallization of random coil conformation to silkII type crystals occured at about 215$^{\circ}C$. The surface, bottom and cross-section of the membranes were observed by scanning electrom microscope. Fine forms alike spherulites appeared at the surface of crystalline membrane.

• Journal of the Architectural Institute of Korea Planning & Design
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• v.35 no.3
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• pp.91-102
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• 2019

This study explores the causes and processes of morphological transformation of apartment complexes in Busan. All apartment complexes built until the year 2016 were selected for statistical analysis, drawing/map examination, field observation, selected expert interviews based on 6 periodical groups: Period I(~1990), Period II(1991~1995), Period III(1996~2000), Period IV(2001~2005), Period V(2006~2010), and Period VI(2011~2016). The research argues for three 'arrangement' types, P1U, L1U and P2U, which have dominated the whole periods occupying 88% of the total 260 complexes. The switch of the leading type represents for morphological transformation of apartment complexes. Four aspects, density(F.A.R.), height(maximum number of floors), deformed-building-type ratio, and building-orientation, have affected the change of 'arrangement' types. Density was the major cause of the arrangement-type switch, from P1U to L1U, on Period II(1991~1995). The morphological change, from type L1U to P2U, on Period V(2006~2010) was caused by height and orientation, and is correlated with the increased number of deformed-type buildings. The first phase morphological change on Period II(1991~1995) was resulted by the supply side of apartment. However, the second phase transformation on Period V(2006~2010) had gone through the complex process including reflection of consumers' demands. The significance of research is to reveal the morphological transformation process of apartment complexes through analytical investigation of the entire apartment data in Busan. The result shows that the major change of urban paysage started to occur from Period V(2006~2010), and the superficial evaluation on apartment 'being monotonous and repetitive' may not be proper at least from the perspective of town plan.

• International Journal of Industrial Entomology and Biomaterials
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• v.3 no.1
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• pp.13-18
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• 2001

The role of polyhedrin in the polyhedra production in baculovirus Autograha californica Nucelopolyhedro-sisvirus (AcNPV) was studied by over-expression of AcNPV polyhedrin or heterologous polyhedrin from Bombyx mori (Bm) NPV or Spodoptera exigua (Se) NPV. The transfer vectors containing additional polyhedrin from AcNPV, BmNPV, or SeNPV were constructed and cotransfected with bacmid bApGOZA into Sf9 cells. The resulting recombinants, designated as vApAcPol, vApBmPol, and vApSePol were tonstructed, and the polyhedra production of the recombinant was characterized. All of the recombinants produced polyhedra in the nucleus, and the polyhedrin was over-expressed. Among three recombinants, vApAcPol and vApBmPol were discriminated by their larger polyhedra size than that of wild type AcNPV, and vApSePol also produced larger polyhedra than wild type SeNPV polyhedra.

• Journal of Powder Materials
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• v.2 no.3
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• pp.247-254
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• 1995

The theoretical optimum quaternary composition for improving the thermal stability of Al-Ti alloy was recently proposed. On the basis of the suggestion, quaternary Al-Ti-V-Zr alloy powders corresponding to the optimum compositions, one of which belongs to the region of the smallest lattice misfit between the matrix and the precipitates and the other belongs to the region of the smallest rate constant of coarsening, were prepared by mechanical alloying and the powders were vacuum-hot-pressed at $430^{\circ}C$ under the pressure of 800 MPa. The thermal stability of the specimens was evaluated by hardness testing after isothermal aging up to 400 hrs at various temperatures. The decrease of hardness of Al-Ti-V-Zr alloys was smaller than that of Al-Ti alloys. It was considered to be due to the formation of $Al_3Zr$ type and$Al_3Ti$ type quaternary precipitates having smaller lattice misfit than $Al_3Ti$ and the increase of volume fraction of All0v during the isothermal aging. The quaternary Al-Ti-V-Zr alloys corresponding to the smallest lattice misfit showed the most improved thermal stablilty and it was mainly considered to be due to the formation of All0v.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.830-833
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• 2004

Voltage step-down characteristics of Ring/Dot type piezoelectric transformer were examined with increasing input voltage from $10\;V_{pp}$ to $140V_{pp}$. Then the output load resistance was fixed to $125\;\Omega$. The voltage gain showed constant value till the input voltage of $70\;V_{pp}$. And then it linearly decreased till the input voltage of $140V_{pp}$. The output voltage of fabricated piezoelectric transformer increased with increasing input voltage. And driving frequencies when the output voltage was maximum value were changed according to input voltage. Frequency shifts and temperature rise of fabricated sample showed 2 kHz, $13^{\circ}C$, respectively when input voltage was changed from $10\;V_{pp}$ to $140V_{pp}$. Because of the temperature rise of fabricated piezoelectric transformer, the step-down characteristics of it was deteriorated above the input voltage of $70\;V_{pp}$.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.