• Title/Summary/Keyword: Two-step etch

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Formation of Silicon Diaphragm Using Silicon-wafer Direct Bonding / Electrochemical Etch-stopping and Its Application to Silicon Pressure Sensor Fabrication (실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용)

  • Ju, B.K.;Ha, B.J.;Kim, K.S.;Song, M.H.;Kim, S.H.;Kim, C.J.;Tchah, K.H.;Oh, M.H.
    • Journal of Sensor Science and Technology
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    • v.3 no.3
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    • pp.45-53
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    • 1994
  • A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

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Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • Jang, Mi;Jeong, Jin-Hyeok;Trung, T.Q.;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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THE EFFECT OF Er,Cr:YSGG IRRADIATION ON MICROTENSILE BOND STRENGTH OF COMPOSITE RESIN RESTORATION (Er,Cr:YSGG 조사가 복합레진 수복의 미세인장 결합강도에 미치는 영향)

  • Son, Jeong-Hye;Kim, Hyeon-Cheol;Hur, Bock;Park, Jeong-Kil
    • Restorative Dentistry and Endodontics
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    • v.35 no.2
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    • pp.134-142
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    • 2010
  • The purpose of this study was to evaluate the effect of Er,Cr:YSGG laser irradiation with hypersensitivity mode on microtensile bond strength of composite resin. Twenty extracted permanent molars were randomly assigned to six groups, according to the irradiation of Er,Cr:YSGG laser, adhesive system (Optibond FL or Clearfil SE bond) and application time of etchant (15 sec or 20 sec). Then composite resin was build up on each conditioned surface. The restored teeth were stored in distilled water at room temperature for 24 h and twelve specimens for each group were prepared. All specimens were subjected to microtensile bond strength and the fracture modes were evaluated. Also, the prepared dentin surface and laser irradiated dentin surface were examined under SEM. The results were as follows: 1. The microtensile bond strength of laser irradiated group was lower than that of no laser irradiated group. 2. Regardless of laser irradiation, the microtensile bond strength of Optibond FL was higher than that of Clearfil SE bond. And the microtensile bond strength of 20 sec etching group was higher than that of 15 sec etching group when using Optibond FL. 3. The SEM image of laser irradiated dentin surface showed prominent peritubular dentin, opened dentinal tubules and no smear layer.

A Study on the Silicon Nitride for the poly-Si Thin film Transistor (다결정 박막 트랜지스터 적용을 위한 SiNx 박막 연구)

  • 김도영;김치형;고재경;이준신
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1175-1180
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    • 2003
  • Transformer Coupled Plasma Chemical Vapor Deposited (TCP-CVD) silicon nitride (SiNx) is widely used as a gate dielectric material for thin film transistors (TFT). This paper reports the SiNx films, grown by TCP-CVD at the low temperature (30$0^{\circ}C$). Experimental investigations were carried out for the optimization o(SiNx film as a function of $N_2$/SiH$_4$ flow ratio varying ,3 to 50 keeping rf power of 200 W, This paper presents the dielectric studies of SiNx gate in terms of deposition rate, hydrogen content, etch rate and leakage current density characteristics lot the thin film transistor applications. And also, this work investigated means to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with SiH$_4$, $N_2$gases.

Design, Fabricaiton and Testing of a Piezoresistive Cantilever-Beam Microaccelerometer for Automotive Airbag Applications (에어백용 압저항형 외팔보 미소 가속도계의 설계, 제작 및 시험)

  • Ko, Jong-Soo;Cho, Young-Ho;Kwak, Byung-Man;Park, Kwan-Hum
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.2
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    • pp.408-413
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    • 1996
  • A self-diagnostic, air-damped, piezoresitive, cantilever-beam microaccelerometer has been designed, fabricated and tested for applications to automotive electronic airbag systems. A skew-symmetric proof-mass has been designed for self-diagnostic capability and zero transverse sensitivity. Two kinds of multi-step anisotropic etching processes are developed for beam thickness control and fillet-rounding formation, UV-curing paste has been used for sillicon-to-glass bounding. The resonant frequency of 2.07kHz has been measured from the fabricated devices. The sensitivity of 195 $\mu{V}$/g is obtained with a nonlinearity of 4% over $\pm$50g ranges. Flat amplitude response and frequency-proportional phase response have been obserbed, It is shown that the design and fabricaiton methods developed in the present study yield a simple, practical and effective mean for improving the performance, reliability as well as the reproducibility of the accelerometers.

Microshear bond strength of a flowable resin to enamel according to the different adhesive systems (접착시스템의 종류에 따른 유동성 레진과 법랑질의 미세전단 결합강도)

  • Kim, Jeong-Ho;Cho, Young-Gon
    • Restorative Dentistry and Endodontics
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    • v.36 no.1
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    • pp.50-58
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    • 2011
  • Objectives: The purpose of this study was to compare the microshear bond strength (uSBS) of two totaletch and four self-etch adhesive systems and a flowable resin to enamel. Materials and Methods: Enamels of sixty human molars were used. They were divided into one of six equal groups (n = 10) by adhesives used; OS group (One-Step Plus), SB group (Single Bond), CE group (Clearfil SE Bond), TY group (Tyrian SPE/One-Step Plus), AP group (Adper Prompt L-Pop) and GB group (G-Bond). After enamel surfaces were treated with six adhesive systems, a flowable composite resin (Filek Z 350) was bonded to enamel surface using Tygon tubes. the bonded specimens were subjected to uSBS testing and the failure modes of each group were observed under FE-SEM. Results: 1. The uSBS of SB group was statistically higher than that of all other groups, and the uSBS of OS, SE and AP group was statistically higher than that of TY and GB group (p < 0.05). 2. The uSBS for TY group was statistically higher than that for GB group (p < 0.05). 3. Adhesive failures in TY and GB group and mixed failures in SB group and SE group were often analysed. One cohesive failure was observed in OS, SB, SE and AP group, respectively. Conclusions: Although adhesives using the same step were applied the enamel surface, the uSBS of a flowable resin to enamel was different.

A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

  • Lim, Jong-Won;Ahn, Ho-Kyun;Ji, Hong-Gu;Chang, Woo-Jin;Mun, Jae-Kyoung;Kim, Hae-Cheon;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.27 no.3
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    • pp.304-311
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    • 2005
  • We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

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Soluble Expression and Purification of Receptor Activator of Nuclear Factor-Kappa B Ligand Using Escherichia coli

  • Park, Sol-Ji;Lee, Se-Hoon;Kim, Kwang-Jin;Kim, Sung-Gun;Kim, Hangun;Choe, Han;Lee, Sang Yeol;Yun, Jung-Mi;Cho, Jae Youl;Chun, Jiyeon;Choi, Kap Seong;Son, Young-Jin
    • Journal of Microbiology and Biotechnology
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    • v.25 no.2
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    • pp.274-279
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    • 2015
  • Receptor activator of nuclear factor-kappa B ligand (RANKL) is a critical factor in osteoclastogenesis. It makes osteoclasts differentiate and multinucleate in bone remodeling. In the present study, RANKL was expressed as a soluble maltose binding protein (MBP)-fusion protein using the Escherichia coli maltose binding domain tag system (pMAL) expression vector system. The host cell E. coli DH5α was cultured and induced by isopropyl β-D-1-thiogalactopyranoside for rRANKL expression. Cells were disrupted by sonication to collect soluble MBP-fused rRANKL. The MBP-fusion rRANKL was purified with MBP Trap affinity chromatography and treated with Tobacco Etch Virus nuclear inclusion endopeptidase (TEV protease) to remove the MBP fusion protein. Dialysis was then carried out to remove binding maltose from the cleaved rRANKL solution. The cleaved rRANKL was purified with a second MBP Trap affinity chromatography to separate unsevered MBP-fusion rRANKL and cleaved MBP fusion protein. The purified rRANKL was shown to have biological activity by performing in vitro cell tests. In conclusion, biologically active rRANKL was successfully purified by a simple two-step chromatography purification process with one column.

A SHEAR BOND STRENGTH OF RESIN CEMENT BONDED TO HUMAN UNCUT ENAMEL, CUT ENAMEL, AND DENTIN IN VITRO

  • Lee Jong-Yeop
    • The Journal of Korean Academy of Prosthodontics
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    • v.41 no.3
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    • pp.319-324
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    • 2003
  • Statement of problem. Adhesives in dentistry playa major role in the success of restorative treatments. In the treatment of all ceramic restoration it is needed to find the adequate bond strength between enamel and dentin. Purpose. The purpose of this study was to evaluate shear bond strength of resin cement bonded to extracted human uncut enamel, cut enamel, and dentin in vitro. Material and methods. Ten freshly extracted anterior teeth without any previous restorative treatments were chosen. The extracted teeth were embedded in PMMA cold acrylic in the shape of a cylinder, 25 mm in diameter by 25 mm in height. The bonding system used was as follow: Uni-Etch (32% phosphoric acid), One-Step adhesive, Duolink resin cement. The specimens were acid etched and rinsed with water. Two layers of One-Step adhesive were coated with a disposable brush on the uncut enamel. VIP curing light at $500mV/cm^2$ was used to cure the adhesive. For cut enamel shear bond test, the specimen used for uncut enamel was further reduced approximately $0.3{\sim}0.5mm$ using a laminate preparation diamond bur (0.3 mm in depth). The specimens were subsequently treated with 320-grit SiC paper followed by 600-grit SiC paper and cleaned with distilled water. The bonding procedure on the cut enamel was same as uncut enamel bonding procedure. For dentin bonding test, the specimen used for cut enamel was further reduced approximately $0.5mm{\sim}1.0mm$ using a laminate preparation diamond bur (0.5 mm in depth of diamond cutting). The amount of reduction was evaluated with the silicone mold. The specimens were subsequently treated with 320-grit SiC paper followed by 600-grit silicon carbon paper and cleaned in distilled water. The bonding procedure on the dentin was same as uncut enamel bonding procedure. All samples were mounted and secured on the Ultradent shear bond test sample holder, and Ultradent restricted shear bond testing device was used with Universal Instron machine until fracture. Analysis of variance (ANOVA) test was performed comparing the result at P<0.05. Multiple comparison (Tukey) was used to compare each groups. Result. The result showed that the mean value in shear bond strength of resin cement bonded to uncut enamel, cut enamel and dentin were 27.04 Mpa, 30.25 Mpa and 26.39 Mpa with respect. Conclusion. Within the limitation of this study, the mean value of the shear bond strength of cut enamel was higher than those of uncut enamel or dentin. However there existed no statistical differences between three different human dentition substrates due to increased adhesive characteristics.

Effect of Er:YAG lasing on the dentin bonding strength of two-step adhesives (2단계 접착제의 상아질 결합강도에 대한 Er:YAG 레이저 조사 영향)

  • Song, Byeong-Choon;Cho, Young-Gon;Lee, Myung-Seon
    • Restorative Dentistry and Endodontics
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    • v.36 no.5
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    • pp.409-418
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    • 2011
  • Objectives: The purpose of this study was to compare the microshear bond strength (${\mu}$SBS) and bonding interfaces of two-step total-etching and self-etching adhesive systems to three etch types of dentin either the acid etched, laser etched or laser and acid etched. Materials and Methods: The occlusal dentinal surfaces of thirty human molars were used. They were divided into six groups: group 1, 37% $H_3PO_4$ + Single Bond 2 (3M ESPE); group 2, Er:YAG laser (KEY Laser 3, KaVo) + Single Bond 2; group 3, Er:YAG laser + 37% $H_3PO_4$ + Single Bond 2; group 4, Clearfil SE Primer + Bond (Kuraray); group 5, Er:YAG laser + Clearfil SE Bond; group 6, Er:YAG laser + Clearfil SE Primer + Bond. The samples were subjected to ${\mu}$SBS testing 24 hr after bonding. Also scanning microscopic evaluations were made on the resin-dentin interfaces of six specimens. Results: The ${\mu}$SBS of group 2 was significantly lower than that of groups 1 and 3 in Single Bond 2 (p < 0.05). There were significant differences among the uSBS of groups 4, 5, and 6 in Clearfil SE Bond (p < 0.05). Very short and slender resin tags were observed in groups 2 and 5. Long and slender resin tags and lateral branches of tags were observed in groups 3 and 6. Conclusions: Treatment of dentin surface using phosphoric acid or self-etching primer improved the adhesion of Er:YAG lased dentin.