• 한국재료학회지
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• 제9권2호
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• pp.168-172
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• 1999

보른이 고농도 도핑된 $\textrm{p}^{+}$-Si 영역상에서 비저항이 낮고 열적 안정성이 우수한 Co/Ti 이중막 실리사이드의 형성을 연구하였다. 본 연구에서는 Co/Ti 이중막 실리사이드는 청결한 $\textrm{p}^{+}$-Si 기판상에 Co(150${\AA}$)/Ti(50${\AA}$) 박막을 E-beam 기술로 진공증착하고 질소분위기($\textrm{10}^{-1}$atm)에서 2단계 RTA 공정(1차열처리:$650^{\circ}C$/20sec, 2차열처리:$800^{\circ}C$/20sec)을 수행하여 제작된다. 실험에서 얻어진 Co/Ti 이중막 실리사이드는 약 500${\AA}$의 균일한 두께를 갖고 18$\mu\Omega$-cm의 낮은 비저항 특성을 나타내었으며, $1000^{\circ}C$에 이르기까지 장시간 후속 열처리를 실시하여도 면저항 변화나 열응집 현상이 발생되지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• 열처리공학회지
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• 제10권1호
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• pp.1-9
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• 1997

The variation of the mechanical properties and the formation of retained austenite with heat treatment conditions in austempered Si bearing carbon steels has been investigated. In the case of a steel containing 0.35C-1.48Si-0.95Mn, it has been found that a feather shape bainite structure of lath are obtained under a isothermal treated condition at just below the Ms temperature, and the martensite, bainitic ferrite and retained austenite of second phase particles on the ferrite matrix for a isothermal treated steels after intercritical annealing are precipitated in a linked shape. The retained austenite with $2{\mu}m$ size induced as TRIP is found to increase with increasing the formation rate of retained austenite for the intercritical annealing and high Si containing steels. The tensile strength is increased as austempering temperature increases in all isothermal treatment temperature, whereas the elongation is shown to roughly decrease as the tensile strength increases. The values of tensile strength-elongation balance have showed a marked dependence upon the elongation rather than the tensile stregth, and their values are increased for high Si containing steels and intercritical annealing condition. The most optimum result has been shown to be the tensile stregth-elongation balance of $2882.4kgf/mm^2.%$ and the elongation of 33.3% for a "B" steel in the heat treating temperature range of $780{\sim}370^{\circ}C$.

• 전자공학회논문지A
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• 제29A권2호
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• pp.68-76
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• 1992

Concurrent Junction process (simultaneous formation of a silicide and a junction on the implanted substrate) by Rapid Thermal Annealig has been investigated. Electrical and material properties of CoSi$_2$ films were analyzed with Alpha Step, 4-point probe, X-ray diffraction(XRD) and Scanning Electron Microscope(SEM). And CoSi$_2$ junctions were examined with Spreading Resistance probe in order to see the redistribution of electrically activated dopants and determined the junction depth. Two step annealing process, which was 80$0^{\circ}C$ for 30sec and 100$0^{\circ}C$ for 30sec in NS12T ambient was employed to form CoSi$_2$ and shallow junctions. Resistivity of CoSi$_2$ was turned out to be 11-15${\mu}$cm and shallow junctions less than 0.1$\mu$m were successfully formed by the process. It was found that the dopant concentration at CoSi$_2$/Si interface increased as decreasing the thickness of Co films in case of $p^{+}/n$ and $n^{+}/p$ junctions while the junction depth decreased as increasing CoSiS12T thickness in case of $p^{+}/n$ junction.

• 미생물학회지
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• 제43권4호
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• pp.264-272
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• 2007

인간면역결핍바이러스(Human Immunodeficiency Virus; HIV) 진단을 위한 초고속 실시간 PCR법을 개발하였다. 검출 대상의 DNA 염기서열은 495염기 HIV-1 특이 env 유전자(gi_l184090)및 294염기 HIV-2 특이 env 유전자(gi_1332355)를 사용하였다. 초고속 실시간 PCR은 microchip에 $6\;{\mu}l$의 PCR 용액을 탑재하는 $Genspector^{TM}$ (Samsung, Korea)을 사용하였으며, PCR의 각 회전 중 단지 두 단계(denaturation, annealing/extension)를 극단적으로 짧은 시간을 주어 수행하게 하였다. 융점분석을 포함한 30회전의 PCR 검색 시간은 총7분30초 이내에 완료되었으며, HIV-1 특이 117염기와 HIV-2 특이 119염기의 PCR산물은 최소 $2.3{\times}10^3$개의 각 env 유전자로부터 30회전의 2단계 초고속 PCR에 의해 성공적으로 증폭시킬 수 있었다. 이러한 초고속 실시간 PCR법은 HIV의 빠른검색뿐 아니라, 다른 병원채의 빠른 검색에도 유용하계 적용될 수 있을 것이다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국레이저가공학회지
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• 제6권2호
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 센서학회지
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• 제27권4호
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• pp.264-268
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• 2018

Vertically-aligned $TiO_2$ nanotube electrodes have attracted considerable attention for applications in solar cells, catalysts, and sensors, because of their ideal structure for electron transport and electrolyte diffusion. Here, we prepare vertically-aligned $TiO_2$ nanotube electrodes using a two-step anodization process. The prepared $TiO_2$ nanotube electrodes exhibit uniform pore structures with an inner diameter of ~80-90 nm and wall thickness of ~20-25 nm. In addition, they exhibit an anatase crystal phase after a high-temperature annealing. The annealed $TiO_2$ nanotube electrodes are applied in dye-sensitized solar cells (DSSCs) as photoanodes. The fabricated DSSC exhibits conversion efficiencies of 3.46 and 2.15% with liquid- and gel-type electrolytes, respectively.

• 한국자기학회지
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• 제10권1호
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• pp.7-10
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• 2000

Co계 비정질합금을 400~46$0^{\circ}C$에서 열처리 한 후 냉각조건에 따른 자기특성의 변화를 조사하였다 42$0^{\circ}C$에서 30분 열처리 한 뒤 큐리점까지 노냉 후 수냉 시킨 경우 초투자율이 수냉 또는 노냉 했을 때보다 60-100% 정도 증가했다. 냉각속도에 따른 자기적 특성 변화를 내부음력 및 이온쌍의 규칙도(ordering) 관점에서 고찰하였다

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1118-1121
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• 2009

We have fabricated inverted staggered pentacene Thin Film Transistor (TFT) with 1-${\mu}m$ channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro-scale source/drain electrodes without etching was successfully achieved using silver nano particle ink, Polydimethylsiloxane (PDMS) stamp and FC-150 flip chip aligner-bonder. Sheet resistance of the printed Ag nano particle films were effectively reduced by two step annealing at $180^{\circ}C$.