• Title/Summary/Keyword: Two-side Holography

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Two-Side Holography System for the Measurements of Spray Characteristics (양 방향 홀로그래피를 이용한 분무 특성 해석 시스템)

  • Choo, Yeon-Jun;Kang, Bo-Seon
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1755-1760
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    • 2004
  • The holographic velocimetry system has a significant potential for the measurements of three dimensional velocities of particles. In this study, orthogonal two-side holography system was developed to obtain three dimensional velocities and sizes of spray droplets. To get high quality of reconstructed images, singe-exposure holography at two time moments and two orthogonal sides was adopted instead of multi-exposure, single-side holography. From three dimensional positions of droplets determined by reconstruction and image processing system, the three dimensional velocities and sizes of each droplet was extracted using the PTV algorithm. To determine the position of particles in the optical axis, a new focusing parameter was introduced based on the correlation between two droplet images at the same distance. The measured results by holography system were compared with those by the PDPA.

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Cross-Sectional Transmission Electron Microscopy Specimen Preparation Technique by Backside Ar Ion Milling

  • Yoo, Jung Ho;Yang, Jun-Mo
    • Applied Microscopy
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    • v.45 no.4
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    • pp.189-194
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    • 2015
  • Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).