• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1030-1039
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• 2006

A high power and high gain Doherty amplifier is designed by using embedded driver amplifiers in the final stage. The operational characteristics of a two-stage Doherty amplifier are analyzed, as a function of the two-stage peaking amplifier gate biases. The driver stages and final output stages are implemented using two single-ended MRF21045s and a single push-pull packaged MRF5P21180, respectively. This two-stage Doherty amplifier demonstrated 27 dB gain with a PAE of 23 % at 15 W average output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.813-822
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• 2009

We have investigated operation of a 1:2:2 asymmetric 3-stage Doherty PA(Power Amplifier) and implemented using the Freescale's 4 W, 10 W PEP LDMOSFETS at 1 GHz. By employing the three peak efficiency characteristics, compared to the two peak N-way Doherty PA, the asymmetric 3-stage Doherty can overcome the serious efficiency degradation along the backed-off output power region and maximize the average efficiency for the modulation signal. To maximize the efficiency characteristic, the inverse class F PA has been designed as carrier and peaking amplifiers. Furthermore, to extract the proper load modulation operation, the adaptive gate bias control signal has been applied to the two peaking PAs based on the envelope tracking technique. For the 802.16e Mobile WiMAX(World Interoperability for Microwave Access) signal with 8.5 dB PAPR(Peak to Average Power Ratio), the proposed Doherty PA has shown 55.46 % of high efficiency at an average output power of 36.85 dBm while maintaining the -37.23 dB of excellent RCE(Relative Constellation Error) characteristic. This is the first time demonstration of applying the saturated PA and adaptive gate bias control technique to the asymmetric 3-stage Doherty PA for the highly efficient transmitter of the base-station application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2241-2248
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• 2011

This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.