• KSCE Journal of Civil and Environmental Engineering Research
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• v.32 no.1D
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• pp.23-31
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• 2012

Busan Metropolitan City government has been implementing the local Bus Quasi-Public Operating policy since 2007. As a result of the policy, financial burden to cover financial deficit has become a big social issue. For successful settlement of the policy, the government should be able to gradually cut off the financial support for the deficit by continuously increasing the bus demand, which can be accomplished by providing more convenient bus services. The weather conditions that affect the public transportation demand include rain, fog and snow. They affect the mode choice for public transportation use, which in turn results in decrease in bus demand. In short, the adverse weather conditions result in significant profit loss of bus transportation, and consequently it financially burdens the City of Busan. In this research, the pattern of travelers' use of transportation modes given various weather conditions was analyzed. In addition, the reasons why people transfer from one to other transportation modes were analyzed by conducting a field survey, and policy implications on desirable public transportation facilities and transfer system were discussed.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.11-116
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• 2000

A topology decreased switching loss and voltage stress by zero voltage switching is presented in this paper. Generally, Switching mode converting productes voltage stress and power losses due to excessive voltage and current. which affect to performance of power supply and reduce overall efficiency of equipments. Virtually, In flyback converter, transient peak voltage and current at switcher are generated by parasitic elements. To solve these problems, present ZVS flyback converter topology applied a auxiliary circuit. Incorporation of auxiliary circuit into a conventional flyback topology serves to reduce power losses and to minimize switching voltage stress. Snubber capacitor in auxiliary circuit serves ZVS state by control voltage variable time at turn on and off of main switch, then reduces voltage stress and power losses. The proposed converter has lossless switching in variable load condition with wide range. A detailed analysis of the circuit is presented and the operation procedure is illustrated. A (50W 100kHz prototype) ZVS flyback converter using a auxiliary circuit is built which shows an efficiency improvement as compared to a conventional hard switching flyback converter.

• Journal of Ocean Engineering and Technology
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• v.20 no.2 s.69
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• pp.59-65
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• 2006

Steel, as a reinforcing mechanism in concrete, provides the tensile strength that is lacking in concrete, alone, and the high alkaline environment (pH 12.5) in concrete offers satisfactory protection against most corrosion of the steel. However, the corrosion of reinforcing steel in concrete can occur by chloride attack or carbonation, and it can cause a loss of integrity a section and concrete failure through cracking and spalling. In this study, a transient electro magnetic method (TEM) of a nondestructive technique is adapted to study the measuring method of steel corrosion in mortar. The sensor was made of an enameled wire, with a diameter of 0.25mm and anacril. He sensor configuration used was a coincident loop type. The secondary electro motive force (2nd EMF) was measured with SIROTEMIII, which equipped the accelerator. The accelerator allowsthe transmitter to turn off approximately $10\sim15$ times faster than normal. The high-resolution time series, used for very shallow or a high resistivity investigation was selected. After steels were corroded by the salt spray, during 4, 8, 15 and 25 days, they were embedded in mortar. The content results acquired in this study are as follows. The variation of the secondary electro motive force (2nd EMF) was shown by the change of steel surface with different corrosion time steel. It was confirmed that measurement of steel corrosion in mortar by a transient electro-magnetic method (TEM) can be possible.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.4
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• pp.65-72
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• 2000

This paper proposes a Push type High Frequency DC-DC Converter using Zero Voltage Switching to reduce turn on and off loss at the switching instants. This paper has a advantage which is able to operating safely in load short, because DC reactor is connected with resonance reactor in order to supply a fixed safely in load short, because DC reactor is connected with resonance reactor in order to supply a fixed current with low ripple from DC power supply. The capacitor $(C_1, C_2)$ connected in switch are a common using as resonance capacitor and ZVS capacitor. The analysis of the proposed high frequency resonance DC-DC converter is generally described by using normallized parameter, and we has evaluated characteristic values which is needed to design a circuit. We conform a rightfulness of theoritical analysis by comparing a theoretical values and experimental values obtained from experiment using MOSFET as switching devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.400-409
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• 2001

A new phase-shifted parallel-input/series-output(PISO) dual converter for tush-power step-up applications has been proposed. Since the proposed converter shows a low switch turn-off voltage stress, switching devices with low conduction loss can be employed in order to improve the power conversion efficiency. Moreover, it features a low output capacitor root-mean-square(RMS) current stress, low input current and output voltage ripple contents, and fast control-to-output dynamics compared to its PWM counterpart. In this paper, the operation of the proposed converter is analyzed in detail and its mathematical models and steady-state solutions are presented. A comparative analysis with the conventional PWM PISO dual converter is also provided. To confirm the operation, features, and validity of the Proposed converter, experimental results from an 800W, 24-350Vdc prototype are presented.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.9-15
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• 2007

In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.