• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.339-339
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• 2010

The metallic nanoparticles (Pt, Au, Ag. Cu, etc.) supported on ceria-titania mixed oxide exhibit a high catalytic activity for the water gas shift reaction ($H_2O\;+\;CO\;{\leftrightarrow}\;H_2\;+\;CO_2$) and the CO oxidation ($O_2\;+\;2CO\;{\leftrightarrow}\;2CO_2$). It has been speculated that the high catalytic activity is related to the easy exchange of the oxidation states of ceria ($Ce^{3+}$ and $Ce^{4+}$) on titania, but very little is known about the ceria titanium interaction, the growth mode of metal on ceria titania complex, and the reaction mechanism. In this work, the growth of $CeO_x$ and Au/$CeO_x$ on rutile $TiO_2$(110) have been investigated by Scanning Tunneling Microscopy (STM), Photoelectron Spectroscopy (PES), and DFT calculation. In the $CeO_x/TiO_2$(110) systems, the titania substrate imposes on the ceria nanoparticles non-typical coordination modes, favoring a $Ce^{3+}$ oxidation state and enhancing their chemical activity. The deposition of metal on a $CeO_x/TiO_2$(110) substrate generates much smaller nanoparticles with an extremely high activity. We proposed a mechanism that there is a strong coupling of the chemical properties of the admetal and the mixed-metal oxide: The adsorption and dissociation of water probably take place on the oxide, CO adsorbs on the admetal nanoparticles, and all subsequent reaction steps occur at the oxide-admetal interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.150.2-150.2
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• 2013

We elucidate the mechanism of the self-assembled organic layer formation at the organic/metal interface of hexaaza-triphenylene-hexacarbonitrile (HATCN)/Au(111) by first-principles calculations and Lowtemperature scanning tunneling microscope (STM). In this work, we used HATCN to deposit organic material which is well known as an efficient OLED charge generation material. Low-temperature STM measurements revealed that self-assembled hexagonal porous structure is formed at terraces of Au(111). We also found that the hexagonal porous structure has chirality and forms only small (<1000 $nm^2$) phaseseparated chiral domains that can easily change their chiral phase in subsequence STM images at 80 K. To explain the mechanism of these observation, we calculated the molecular-molecular and molecule-surface interaction energies by using density functional theory method. We found that the change of their chiral phase resulted from the competition between the two energies. These results have not only verified our experimental observations, but also revealed the delicate balance between different interactions that caused the self-assembed structures at the surface.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.2 no.1
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• pp.23-35
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• 2008

Mobile IP (MIP) is the solution supporting the mobility of Mobile Nodes (MNs), however, it is known to lack the support for NEtwork MObility (NEMO). NEMO manages situations when an entire network, composed of one or more subnets, dynamically changes its point of attachment to the Internet. NEMO Basic Support (NBS) protocol ensures session continuity for all the nodes in a mobile network, however, there exists a serious pinball routing problem. To overcome this weakness, there are many Route Optimization (RO) solutions such as Bi-directional Tunneling (BT) mechanism, Aggregation and Surrogate (A&S) mechanism, Recursive Approach, etc. The A&S RO mechanism is known to outperform the other RO mechanisms, except for the Binding Update (BU) cost. Although Improved Prefix Delegation (IPD) reduces the cost problem of Prefix Delegation (PD), a well-known A&S protocol, the BU cost problem still presents, especially when a large number of Mobile Routers (MRs) and MNs exist in the environment such as train, bus, ship, or aircraft. In this paper, a solution to reduce the cost of delivering the BU messages is proposed using a multicast mechanism instead of unicasting such as the traditional BU of the RO. The performance of the proposed multicast-based BU scheme is examined with an analytical model which shows that the BU cost enhancement is up to 32.9% over IPDbased, hence, it is feasible to predict that the proposed scheme could benefit in other NEMO RO protocols.

• Journal of KIISE:Information Networking
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• v.30 no.1
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• pp.117-125
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• 2003

IPv6 (IP version 6), which was standardized by the IETF (Internet Engineering Task Force) to cope with existing IPv4 problems, needs several approaches for interoperation with IPv4. The internetworking of IPv6 with IPv4 is an important key to the deployment of the next generation Internet. As the solutions to the transition mechanism, both tunneling and translator methods have been proposed. In this paper, we analyze functional elements for implementation design of a transition mechanism based on the NAT-PT (NAT-Protocol Translation), and propose an extension algorithm that uses ports for effective use of global IPv4 addresses. The algorithm presented in this paper is a method of combining NAT-PT with Port Translation mechanism. The algorithm does not assign an IPv4 address to the host that needs IPv4 address, but allocates a single temporary IPv4 address and a port number in order to identify host.

• The KIPS Transactions:PartC
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• v.12C no.2 s.98
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• pp.267-280
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• 2005

In this paper, we implement and verify XMIP integrating IETF Mobile IP and the Explicit Multicast mechanism for a great number of small group multicast communications. U a source node sends Xcast packets explicitly inserting destination nodes into the headers, each Xcast router decides routes and forwards the packets toward each destination node based on unicast routing table without the support of multicast trees. n is a straightforward and simple multicast mechanism just based on a unicast routing table without maintaining multicast states because of the inheritance from the Explicit Multicast mechanism. This research modifies and extends the functionality of IETF Mobile IP's mobility agents, such as HA/FA to HA+/FA+ respectively, considering interworking with Xcast networks. Xcast packets captured by HA+ are forwarded into X-in-X tunnel interfaces for each FA+ referred to the binding table of HA.. This X-in-X tunneling mechanism can effectively solve the traffic concentration problem of IETF Mobile IP multicast services. Finally WLAN-based testbed is built and a multi-user Instant messenger system is developed as a Xcast application for finally verify the feasibility of the implemented XMIP/Xcast protocols.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.4
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• pp.868-878
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• 1998

There are recently increasing needs for precision XYZ-stage in the fields of nanotechnology, specially in AFMs(Atomic Force Microscope) and STMs(Scanning Tunneling Microscope). Force measurements are made in the AFM by monitoring the deflection of a flexible element (usually a cantilever) in response to the interaction force between the probe tip and the sample and controlling the force neasyred constant topography can be obtained. The power of the STM is based on the strong distance dependence of the tunneling current in the vacuum chamber and the current is a feedback for the tip to trace the surface topography. Therefore, it is required for XYZ-stage to position samples with nanometer resolution, without any crosscouples and any parasitic motion and with fast response. Nanometer resolution is essential to investigate topography with reasonable shape. No crosscouples and parasitic motion is essential to investigate topography without any shape distortion. Fast response is essential to investigate topography without any undesirable interaction between the probe tip and sample surface ; sample scratch. To satisfy these requirements, this paper presents a novel XYZ-stage concept, it is actuated by PZT and has a monolithic flexible body that is made symmetric as possible to guide the motion of the moving body linearly. PZT actuators have a very fast response and infinite resolution. Due to the monolithic structure, this XYZ-stage has no crosscouples and by symmetry it has no parasitic motion. Analytical modeling of this XYZ-stage and its verification by FEM modeling are performed and optimal design that is to maximize 1st natural frequencies of the stage is also presented and with that design values stage is manufactured.

• Convergence Security Journal
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• v.3 no.1
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• pp.73-84
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• 2003

The IPv4 that used to be generally used as a medium of computer communications in 1980s has reached its limits now. IPv6 (IP Version 6) is being prepared to solve the limitations of the IPv4. However, the biggest problem of IPv6 is that it is not compatible with the IPv4. To resolve the compatibility issue, Dual Stack, Tunneling and Header Converting methods have been proposed. The Header Converting method allows communications between the IPv4 and IPv6 networks with the converter. This method's strength is that it is easy to embody and the procedures for embodiment is simple. However, this method still contains the weaknesses that the existing IPv4 has. On the current document, the Header Converting method among the three methods is discussed to resolve the problems this method has. To solve the Header Converting method's weakness, the security problem between sections, the IP Header field values are converted to the relative field values and IPSec (IP Security) and ESP (Encapsulation Security Payload) are applied. The proposed "Encrypted Header Converting Method" that is encrypted in packet units has solved the weakness that the pre-existing Header Converting method used to have.d to have.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.7
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• pp.1647-1652
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• 2010

A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.