• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.52-55
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• 2011

Spin-transfer torque is a useful tool to control the magnetic state in nanostructures. In magnetic tunnel junctions, the spin-transfer torque has two components, the in-plane spin torque and the perpendicular spin torque. While properties of the in-plane spin-transfer torque are relatively well understood, properties of the perpendicular spin-transfer torque still remain controversial. A recent experiment demonstrated that in asymmetric magnetic tunnel junctions, the bias voltage dependence of the perpendicular spin-transfer torque contains both linear and quadratic terms in the bias. However it still remains unexplored how the bias voltage dependence changes as a function of material parameters. In this paper, we systematically investigate the perpendicular spin-transfer torque in asymmetric magnetic tunnel junction by varying spin splitting energy, work function difference, and Fermi energy of the ferromagnetic metal leads.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.159-163
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• 2000

MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$㎛$^2$. When specific resistance values reached 2.28 ㏀$\times$㎛$^2$, we have observed that MR ratios become as high as 120%.

• Tunnel and Underground Space
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• v.27 no.4
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• pp.185-194
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• 2017

This technical paper is a study on the unique displacements of Shotcrete Lining at the mined tunnel during excavation period through deep consideration with real time data from monitoring instrumentations correlation with the numerical analysis to identify the rock stresses and the rock spring points at the working face of the Conventional tunnelling by the Drill and Blast, based on the geological face mapping results of the project NS2, Transmission cable tunnel project in Singapore. The created geometry of numerical model was prepared to the real mined tunnel construction site including, vertical shaft, construction adit, tunnel junction area, and 2 enlargement caverns. The convergence measurements by the monitoring instrumentation were performed during the tunnel excavation and shaft sinking construction stages to guarantee the safety of complicated underground structures.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.369-373
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• 2003

Magneto-optic Kerr Effect(MOKE), AFM and magnetoresistance measurements have been carried out on as-deposited and annealed Magnetic Tunnel Junctions(MTJs) with junction sizes 180, 250, 320 and 380 $\mu\textrm{m}$ in order to investigate the correlation among interlayer exchange coupling, surface roughness and junction size. Relatively irregular variations of coercivity $H_{c}$ (∼17.5 Oe) and interlayer exchange coupling $H_{E}$ (∼17.5 Oe) are observed over the junction in as-deposited sample prepared by DC magnetron sputtering. After annealing at $200^{\circ}C$, $H_{c}$ decreases to 15 Oe, while $H_{ E}$ increases to 20 Oe with smooth local variation. $H_{E}$ shows very good correlation with surface roughness across the junction in agreement with Neel's orange peel coupling. The increasing slope per $\mu\textrm{m}$ of normalized $H_{c}$ and $H_{E}$ are same near junction edge along free-layer direction irrespective of junction size, giving relatively uniform $H_{c}$ and $H_{ E}$ for wider junction size. Thickness profiles of the junctions measured with $\alpha$-step show increasingly flat top surface for larger junctions, indicating better uniformity for large. junctions in agreement with the normalized$ H_{c}$ and H$/_{E}$ curves. TMR ratios also increase with increasing junction size, indicating improvement for larger uniform junctions.

• Journal of Magnetics
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• v.7 no.2
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• The Journal of Engineering Research
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• v.6 no.2
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.413-414
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• 1996

A 230 GHz SIS tunnel junction receiver has been being developed for radio astronomy in Nagoya University. In this heterodyne receiver, we use a $\~$1/3 reduced hight rectangular waveguide SIS mixer with two tuning elements as front end. The mixer block with SIS junction was cooled to 4K with a closed cycle He-gas refrigerator. So far, a double sideband receiver noise temperature lower than l00K in 222-237 GHz is obtained. The receiver exhibits a best DSB noise temperature of 69K at 236 GHz as well as 228 GHz.

• Journal of Magnetics
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• v.14 no.4
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• pp.172-174
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• 2009

Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Journal of the Korean Geotechnical Society
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• v.15 no.4
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• pp.221-234
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• 1999

This paper deals with the application of joint element in the finite element modeling of discontinuities encountered during rock tunneling. A nodal displacement joint element was implemented in a two dimensional finite element program GEOFE2D. The applicability of the joint element for modeling of discontinuities and the numerical stability of the implemented algorithm were examined by comparing the results of reduced small scale model tests as well as commercially available FEM program. The GEOFE2D was then used to analyze a tunnel crossed by a major discontinuity for the purpose of understanding the effect of discontinuity on the tunnel behavior. In addition, a modeling technique for the junction of discontinuity and shotcrete lining was presented. The results of analysis indicated that the stress-strain field around the tunnel is significantly altered by the presence of discontinuity, and that the stresses in the shotcrete lining considerably increase at the junction of the shotcrete lining and the discontinuity. It is therefore concluded that the major discontinuities must be carefully modeled in the finite element analysis of a tunneling problem in order to obtain more reliable results close to actual tunnel behavior.