• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• Journal of Magnetics
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• 제8권1호
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• pp.36-44
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• 2003

Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

• Journal of Magnetics
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• 제16권2호
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• Journal of Magnetics
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• 제15권4호
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

• 대한전자공학회논문지SD
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• 제44권1호
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• pp.1-7
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• 2007

MTJ (Magnetic Tunneling Junction) 소자는 불 (Boolean) 연산을 수행할 수 있을 뿐만 아니라, 자신의 출력 정보를 저장하는 비휘발성 소자이다. 기존의 트랜지스터로 구성된 논리 연산자를 MTJ 소자로 대체함으로써, 조합논리 회로와 순차논리 회로로 구성된 디지털 논리 회로를 자기논리 (magneto-logic) 회로로 대체 가능하다. 또한 자기논리 회로는 비휘발성 논리 소자를 사용함으로써, 회로 면적 면에서 우수하고 전원이 꺼져도 정보를 유지할 수 있는 장점을 가지고 있다. 본 논문에서는 이러한 자기논리 회로의 예로 3비트 업/다운 카운터를 설계하였고 그 동작을 이전 논문에서 제안된 바 있는 macro-model을 보완 적용하여 검증하였다.

• Wind and Structures
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• 제35권4호
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• pp.269-285
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• 2022

The pressure-mitigating effects of a high-speed train passing through a tunnel with a partially reduced cross-section are investigated via the numerical approach. A compressible, three-dimensional RNG k-ε turbulence model and a hybrid mesh strategy are adopted to reproduce that event, which is validated by the moving model test. Three step-like tunnel forms and two additional transitions at the tunnel junction are proposed and their aerodynamic performance is compared and scrutinized with a constant cross-sectional tunnel as the benchmark. The results show that the tunnel step is unrelated to the pressure mitigation effects since the case of a double-step tunnel has no advantage in comparison to a single-step tunnel, but the excavated volume is an essential matter. The pressure peaks are reduced at different levels along with the increase of the excavated earth volume and the peaks are either fitted with power or logarithmic function relationships. In addition, the Arc and Oblique-transitions have very limited gaps, and their pressure curves are identical to each other, whereas the Rec-transition leads to relatively lower pressure peaks in C_Pmax, C_Pmin, and ΔC_P, with 5.2%, 4.0%, and 4.1% relieved compared with Oblique-transition. This study could provide guidance for the design of the novel railway tunnel.

• 한국자기학회지
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• 제12권2호
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• pp.68-72
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• 2002

본 연구에서는 터널링 자기저항 소자에서 절연층을 중심으로한 접합면의 정전 용량이 이를 메모리 소자로 사용하였을 때 접근시간에 미치는 영향을 알아보았다. 여기에서 얻어진 결과는 자장을 인가하지 않고 전기적 신호만을 입력하여 측정하였다. 이를 위해 시편에 1 MHz의 양극성 구형파를 인가하고 응답 파형을 오실로스코프로 관찰하여 시정수를 계산하였다. 그리고 각 cell의 접합면 면적에 따라 시정수를 비교하였다. 이렇게 측정된 시정수와 시편에서 각 부분의 전기적 저항 측정자료들을 기초로 전기 패드 리드 그리고 접합면과 같은 시편의 각 부위가 전기적 회로로 모델링 되었다. 그 결과 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ cell에서 약 90 pF의 접합면 정전용량이 존재함을 유추할 수 있었다. 또한 모델링 결과와 실제 측정한 결과를 서로 비교하여 그 특성이 매우 유사함을 보였다.

• 한국자기학회지
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• 제3권1호
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• pp.29-33
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• 1993

$1{\times}10^{-6}$Torr의 진공에서 열저항 가열식 진공증착 방법으로 제작한 $Permalloy/Al_{2}O_{3}/Co$ 강자성 터널집합의 자기저항 효과를 조사하였다. 이 논문에서는 제작한 강자성 터널접합 시료의 전류-전압 특성과 자기 valve 효과를 측정하고, 시료진동형자기계로 측 정한 자기이력곡선을 통하여 터널저항의 히스테리시스성 자장 의존성을 조사하였다. 터널링은 전류-전압 특성을 측정함으로써 확인 되어진다. 자기저항의 히스테리시스 곡선은 자화의 히스테 리시스 곡선과 잘 대응한다. 측정한 자기저항비 ${\Delta}R/R$은 실온에서 약 0.6% 였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.49-55
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• 2016

Nowadays there are magnetic sensors in a wide variety of equipment such as computers, cars, airplanes, medical and industrial instruments. In many of these applications the magnetic sensors offer safe and non-invasive means of detection and are more reliable than other technologies. The electric current in a conductor generates a magnetic field detected by this type of sensor. This work aims to define a package dedicated to an electrical current sensor using a MTJ (Magnetic Tunnel Junction) as a sensing device. Four different proposals of packaging, three variations of the chip on board (CoB) package type and one variation of the thin small outline package (TSOP) were analyzed by COMSOL modeling software by simulating a brad range of current injection. The results obtained from the thermal and magnetic analysis has proven to be very important for package improvements, specially for heat dissipation performance.