• 대한전자공학회논문지
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• 제11권1호
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• pp.40-46
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• 1974

티넬다이오드를 마이크로 웨이브 발진기로 동작시키면서 출력이 복사되어 이동물체에서 반사할때 변화신호를 티넬다이오드에 주입하여 부성저항영역에서 혼합시키는 경우 이동물체를 포함하는 전체계의 임퍼턴스와 발진조건, 주파수 변환 이론을 고찰했다. 터넬다이오드름 2.035GHz, 0.1mw로 발진시키고 이동물체반사신호와 등가인 신호발생기는 125MHz 낮게 발광시켰다. 입연신호크기에 따른 변환손실은 대신호주입 경우 약 67db였다.

• 태양에너지
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• 제18권1호
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• pp.35-43
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• 1998

In two terminals monolithic tandem solar cells, tunnel diode is an important variable to improve conversion efficiency depending on current matching between the top and the bottom cells. Especially, the GaAs/Ge tandem is one of the most interesting cells for its high potential efficiency. This paper shows that physical analysis about I-V specific character of the GaAs/Ge solar cell, which is grown by MOCVD for GaAs or CVD for Ge, using computer simulation and experimental results, varying with thickness of the tunnel diode layer and concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• 한국전자파학회지:전자파기술
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• 제11권4호
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• pp.39-52
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• 2000

A design of 2 stage S-DLVA(successive detector log video amplifier) was studied to detect wide dynamic radar pulse ranging from -70 ㏈m to 0㏈m. A basic design idea was focused on the linear detection in logarithmic scale of wide dynamic range radar pulses from nosie-like weak power of -70 ㏈m to relatively high power 0 ㏈m. It is highly formidable, since it requires high speed detection less than 10 nsec over the operating frequency ranges from 6 to 18 ㎓. A limiter diode, a tunnel diode and an L17-C were used as a protecting device, a detector diode and a log video amplifier in companion as a single stage detector to give voltage output proportional to the input power of about 35 ㏈ dynamic range. A protype of 2-stage DLVA having one more single stage detector was fabricated with a 32 ㏈ low noise amplifier and a 3 ㏈ hybrid coupler to provide total 70 ㏈ dynamic range detection. The logging characteristics were measured to have log slope of 25m.V/㏈ against 70 ㏈ logging range from -55 ㏈m to +15 ㏈m, the log linearity of within +/- 1.5 ㏈, and tangential sensitivity was at -63 ㏈m. The pulse dynamics of rise time and recovery time were measured as 50 nsec and 1.2 $\mu$sec, respectively. The reason might be due to the parasitic capacitances of packaged limiter, tunnel diode, and L17-C.

• 대한전자공학회논문지
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• 제10권6호
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• pp.45-55
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• 1973

본 논문은 한개의 터널다이오드로 구성된 시간에 무관한 비선형 회로를 논한다 부저항 소자로 구성된 비선형 회로의 해를 구하기 전에 비선형 소자의 정특성을 어떤 함수로 표시할 필요가 있다. 최소 자승법에 의해서 정특성을 표현하는 근사 다항식 커브를 구했다. 비선형 회로를 해석하기 위해서는 우선 그 회로에 관한 상태방정식이 설정되면 프레딕터·코렉터 방법에 의해서 해를 구할수 있다. 최종적으로, 비선형 회로의 안정도와 발진 조건을 논하기 위해서 limit cycle을 점철했다.

• 대한전자공학회논문지
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• 제9권3호
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• pp.22-28
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• 1972

새로운 전가산기회로를 제안하고 그 동작특성에 관하여 논한다. 회로는 Schottky-Barrier 다이오드 트랜지스터 터낼다이오드로서 구성되며 종래 제안되어 있는 회로의 동작제속도를 개선하고, 트랜지스터 베이스 바이어스전압의 압입 등 회로구성상의 결점을 제거하였다. 정특성곡선을 이용하여 회로구성소자의 최적치를 구하고, 회로동작에 관하여 고찰하였다.

• 한국통신학회논문지
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• 제8권1호
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• pp.38-42
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• 1983

1개의 터널 다이오우드(TD)의 稱特性을 커어브 트레서로부터 2개의 指數項을 합으로 나타내어 電子計算機에 의해 TC對特性을 플롯한 결과 理論値의 2%이내의 오차로 近似시킬 수 있었다. 이와 같이 구한 對特性을 이용하여 MV(멀티바이브레이터)트리거作動을 形式的으로 잘 說明할 수 있었으며 安定特性을 區間直線法에 의해서 解析한 結果는 實驗値와 잘 일치함을 알았다.

• 대한전자공학회논문지
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• 제6권2호
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• pp.6-20
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• 1969

부저항소자인 턴넬다이오드와 수동선형부하로 부저항발진기를 구성하고 수동부하를 가변하여 주파수최대화에 관해서 연구했다. 이론적인 해석과 복소평면상의 임피이던스 궤적을 도시하고 병렬-RL부하와 저항부하의 두 경우의 최대발진주파수를 측정하여 두 경우의 실험결과를 보면 병렬-RL부하의 폭이 훨씬 높은 주파수를 발진하는 것을 알았다.

• 조명전기설비학회논문지
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• 제29권8호
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• pp.1-6
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• 2015

In this paper, we propose the LED(Light-Emitting-Diode) emergency lighting in a tunnel by using the thermoelectric devices. To achieve high generated power, thermoelectric device should be have high Seebeck coefficient and small contact area. Also, we reveal that a moderate heatsink required for high generated power. From the waste heat of LED tunnel lighting module (25W), the generated power was 0.062W by thermoelectric device, and it could illuminate for 1hour after charge the battery of emergency lighting during about 101hours.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.