• Journal of environmental and Sanitary engineering
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• v.14 no.2
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• pp.1-7
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• 1999

In the tungsten industry as light source material, tungsten filament which used as light source material ould form after molybdenum wire which used as the center supporter for coil shape tungsten wire was removed. The purpose of this study is to develop new process named "hydrogen peroxide dissolution method". This process uses hydrogen peroxide, which is harmless to human body and oxidize molybdenum wire selectively. The results were as follows:1. The dissolution of molybdenum wire was proportion to a solution and contact surface of molybdenum wire. 2. The optimum $H_2O_2/H_2O$ were 1:0.5 ~ 1:1.75. 3. The time of dissolution was 65~70 minutes, and the PCS of sample were 20,800 PCS(1,820g). 4. Total cost($H_2O_2$, catalyst) was ￦19,088.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.206-206
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• 2003

• Proceedings of the Korean Reliability Society Conference
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• 2004.07a
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• pp.129-137
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• 2004

This paper presents an accelerated life test for burnout of tungsten filament of incandescent lamp. From failure analyses of field samples, it is shown that their root causes are local heating or hot sports in the filament caused by tungsten evaporation and wire sag. Finite element analysis is performed to evaluate the effect of vibration and impact for burnout, but any points of stress concentration or structural weakness are not found in the sample. To estimate the burnout life of lamp, an accelerated life test is planned by using quality function deployment and fractional factorial design, where voltage, vibration, and temperature are selected as accelerating variables. We assumed that Weibull lifetime distribution and a generalized linear model of life-stress relationship hold through goodness of fit test and test for common shape parameter of the distribution. Using accelerated life testing software, we estimated the common shape parameter of Weibull distribution, life-stress relationship, and accelerating factor.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.7 s.238
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• pp.921-929
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• 2005

This paper presents an accelerated life test for burnout of tungsten filament of incandescent lamp. From failure analyses of field samples, it is shown that their root causes are local heating or hot spots in the filament caused by tungsten evaporation and wire sag. Finite element analysis is performed to evaluate the effect of vibration and impact for burnout, but any points of stress concentration or structural weakness are not found in the sample. To estimate the burnout life of lamp, an accelerated life test is planned by using quality function deployment and fractional factorial design, where voltage, vibration, and temperature are selected as accelerating variables. We assumed that Weibull lifetime distribution and a generalized linear model of life-stress relationship hold through goodness of fit test and test for common shape parameter of the distribution. Using accelerated life testing software, we estimated the common shape parameter of Weibull distribution, life-stress relationship, and accelerating factor.

• Journal of environmental and Sanitary engineering
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• v.14 no.4
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• pp.143-149
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• 1999

In the tungsten industry as light source material, tungsten filament which used as light source material could form after molybdenumwire which used as the center supporter for coil shape tungsten wire was removed. This process uses hydrogen peroxide, Ozone and UV(Ultraviolet)Lamp, for the quantity of hydrogen peroxide decrease. The results were as follows : 1. An incandescent electric Lamp type : FL(FL-20) type : A standard of commodity (P.W.: $19{\pm}1.0mg$, $C.R:4.5{\pm}0.3{\Omega}$) 1) Only hydrogen peroxide treated ; Reaction Time : 65Min., P.W.: 18.60mg, $C.R.:4.60{\Omega}$ 2) Ozone/Ultraviolet/70% of hydrogen peroxide; Reaction Time : 64Min., P.W.: 18.61mg, C.R.: $4.61{\Omega}$ 2. A Fluorescent Lamp Type : GLS(GLS-40) Type : A standard of commodity(P.W.: $11.8{\pm}0.2mg$$65{\pm}1.5{\Omega}$) 1) Only hydrogen peroxide treated ; Reaction Time: 72Min, P.W.:11.88mg, C.R.: $65.62\Omega$ 2) Ozone/Ultraviolet/70% of hydrogen peroxide;Reaction Time:71Min., P.W.:11.88mg, C.R.: $65.63\Omega$

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.