• 한국표면공학회지
• /
• 제26권1호
• /
• pp.3-9
• /
• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.547-548
• /
• 2006

The main object of this research was to examine the effect of sintering conditions on the microstructure of tungsten heavy alloys and how the resulting modification of the microstructure can be used to optimize their mechanical properties. Alloys composed of 88%, 93% and 95% wt. of tungsten and the balance is Ni: Fe in the ratio of 7:3 were sintered at different temperatures for different sintering holding times in hydrogen atmosphere. It was shown that the mechanical properties of the alloys, and especially their ductility, are harmed when tungsten grains are contiguous.

• 한국정보통신학회논문지
• /
• 제6권5호
• /
• pp.689-695
• /
• 2002

막질의 조성은 공정 개발과 고품질 생산 적용을 위한 반도체 소자의 제조에 있어서 풍요한 요소의 하나 이다. 막의 표면과 계면의 조성은 기본적으로 AES측 통하여 알 수 있다. 본 연구에서는 온도, DCS post flow, shower head life time 등과 같은 공정조건으로 LPCVD법을 이용한 tungsten suicide 박막을 증착하고 이들의 구조적, 전기적 특성과 조성비를 측정하며 WSix박막을 해석하였고 이로부터 Si/W의 조성비를 비교하였다. Si와 W의 조성비는 DCS post flow에 의하여 WSix박막의 표면에서 증가하였으며, 폴리실리콘과 tungsten silicide 계면에서는 온도의 증가에 따라 조성비가 증가함을 알 수 있었다. 이 결과는 메모리 소자 제조의 WSix 박막 증착의 공정조건 최적화에 적용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.571-572
• /
• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• Journal of Welding and Joining
• /
• 제22권1호
• /
• pp.71-76
• /
• 2004

In the standpoint of the arc pressure, the effects of the filler wire feed rate on the penetration was investigated in this study. The pure Ar gas was used as a shield gas and the parameters investigated were the welding current and the filler wire feed rate. By making the experiment on the arc pressure, we could know that the arc pressure was fluctuated as the depth-into-arc of the tungsten rod. Instead of the filler wire, the tungsten rod was supplied into the molten pool to make this experiment. Because the filler wire melted in arc and then we couldn't measure the arc pressure. So, the tungsten rod - the highest melting point - was used. According to the depth-into-arc of the tungsten rod, the arc pressure could be measured by using the manometer. It was proved that the arc pressure got higher as the wire feed rate was slow. It is reported the arc pressure is proportion to welding voltage and the square of welding current. But, in the filler wire TIG welding, we could blow that arc pressure was fluctuated as the depth-into-arc of filler wire was changed. We could measure the arc pressure by the variation of the filler wire feed rate and could verify that it affected bead shape and penetration.

• 한국재료학회지
• /
• 제24권5호
• /
• pp.249-254
• /
• 2014

Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide($WO_3$) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the $WO_3$-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of $WO_3$, Mg and $B_2O_3$. It was found that $WO_3$, Mg and $B_2O_3$ reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of $B_2O_3$ with B successfully solved the diffusion problem. From the optimum condition tungsten boride($W_2B$ and WB) powders which has 0.1~0.9 um particle size were synthesized.

• Nuclear Engineering and Technology
• /
• 제55권6호
• /
• pp.1994-1998
• /
• 2023

This study quantitatively evaluated the source term of a linear accelerator according to target thickness for a 6-20 MeV electron beam using MCNP6. The elements of the target were tungsten and copper, and a composite target and single target were simulated by setting different thickness parameters depending on energy. The accumulation of energy generated through interaction with the collided target was evaluated at 0.1-mm intervals, and F6 tally was used. The results indicated that less than 3% reference error was maintained according to the MCNP recommendations. At 6, 8, 10, 15, 18, and 20 MeV, the energy accumulation peaks identified for each target were 0.3 mm in tungsten, 1.3 mm in copper, 1.5 mm in copper, 0.5 mm in tungsten, 0.5 mm in tungsten, and 0.5 mm in tungsten. For 8 and 10 MeV in a single target consisting only of copper, the movement of electrons was confirmed at the end of the target, and the proportion of escaped electrons was 0.00011% and 0.00181%, respectively.

• 자원리싸이클링
• /
• 제30권4호
• /
• pp.54-63
• /
• 2021

SCR 탈질 폐촉매로부터 바나듐과 텅스텐은 소다배소-수침출 공정을 통해 얻은 침출액으로부터 분리/회수하여 얻을 수 있다. 본 연구에서는 강염기성 음이온교환수지인 Lewatit monoplus MP 600을 사용하여 연속식 이온교환칼럼에서 수용액에 용해되어 있는 바나듐과 텅스텐의 흡·탈착 거동을 알아보고, 바나듐/텅스텐 분리를 위한 연속식 이온교환칼럼 운전조건을 제시하고자 하였다. 수용액 pH 8.5에서 단일 성분 수용액으로 연속식 흡착실험을 수행한 결과, 흡착용량은 바나듐 44.75 mg/(g of resin)과 텅스텐 64.92 mg/(g of resin)으로 바나듐보다 텅스텐의 흡착용량이 크게 나타났으며 이는 이온교환수지에 흡착되는 이온의 전하수가 바나듐 보다는 텅스텐이 작기 때문이라고 사료된다. 텅스텐이 흡착된 이온교환수지에 바나듐 함유 수용액이 공급됨에 따라 이온교환수지에 흡착되었던 텅스텐이 바나듐과 교환되며 탈착되는 거동을 보였으며, 이로부터 MP 600에 대하여 바나듐이 텅스텐보다 친화도(affinity)가 높음을 알 수 있었다. SCR 탈질 폐촉매 침출액과 동일한 농도의 바나듐과 텅스텐 혼합용액으로 pH 8.5에서 연속식 실험을 수행한 결과 바나듐의 흡착 용량은 48.72 mg/(g or resin)으로 공급량의 80%가 흡착된 반면 텅스텐의 경우 이온교환수지에 흡착된 양이 거의 0에 근접하며 바나듐과 텅스텐의 분리가 효과적으로 이루어졌다. 바나듐이 흡착된 이온교환수지로부터 2M HCl를 15 mL/h로 공급하여 97.7%의 바나듐을 99%의 순도로 탈착시킬 수 있었다. 탈착용액으로부터 염화암모늄을 침전제로 사용하여 90℃에서 암모늄폴리바나데이트 형태로 93%의 바나듐을 회수하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.129-132
• /
• 1998

In this paper, we have studied the effect of electron reflection on shadow mask on which tungsten oxide film is coated and have studied the variation of beam mislanding with coating thickness in CRT. We found the method to be able to control coating thicknessed and optimum coating thickness of tungsten oxide film was 1∼2$\mu\textrm{m}$. Mislanding of electron beam was reduced about 20∼48% with increasing coating thickness in CRT

• 한국표면공학회지
• /
• 제31권1호
• /
• pp.45-53
• /
• 1998

Sharp tips are commonly used for applications in fields as diverse as nanolithography, lowvoltage field emitters, emitters, nanoelectroniecs, electrochemisty, cell biology, field-ion and electron microscopy. tungsten wire, mater만 used in this experiment, which test the chip of wafer has been used to the needle of probe card. Tungsten wire was sharpened by electrochemical etching methode to get a typical tip shape.