• Journal of the Korean institute of surface engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.547-548
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• 2006

The main object of this research was to examine the effect of sintering conditions on the microstructure of tungsten heavy alloys and how the resulting modification of the microstructure can be used to optimize their mechanical properties. Alloys composed of 88%, 93% and 95% wt. of tungsten and the balance is Ni: Fe in the ratio of 7:3 were sintered at different temperatures for different sintering holding times in hydrogen atmosphere. It was shown that the mechanical properties of the alloys, and especially their ductility, are harmed when tungsten grains are contiguous.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.689-695
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• 2002

Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• Journal of Welding and Joining
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• v.22 no.1
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• pp.71-76
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• 2004

In the standpoint of the arc pressure, the effects of the filler wire feed rate on the penetration was investigated in this study. The pure Ar gas was used as a shield gas and the parameters investigated were the welding current and the filler wire feed rate. By making the experiment on the arc pressure, we could know that the arc pressure was fluctuated as the depth-into-arc of the tungsten rod. Instead of the filler wire, the tungsten rod was supplied into the molten pool to make this experiment. Because the filler wire melted in arc and then we couldn't measure the arc pressure. So, the tungsten rod - the highest melting point - was used. According to the depth-into-arc of the tungsten rod, the arc pressure could be measured by using the manometer. It was proved that the arc pressure got higher as the wire feed rate was slow. It is reported the arc pressure is proportion to welding voltage and the square of welding current. But, in the filler wire TIG welding, we could blow that arc pressure was fluctuated as the depth-into-arc of filler wire was changed. We could measure the arc pressure by the variation of the filler wire feed rate and could verify that it affected bead shape and penetration.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.249-254
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• 2014

Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide($WO_3$) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the $WO_3$-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of $WO_3$, Mg and $B_2O_3$. It was found that $WO_3$, Mg and $B_2O_3$ reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of $B_2O_3$ with B successfully solved the diffusion problem. From the optimum condition tungsten boride($W_2B$ and WB) powders which has 0.1~0.9 um particle size were synthesized.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.1994-1998
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• 2023

This study quantitatively evaluated the source term of a linear accelerator according to target thickness for a 6-20 MeV electron beam using MCNP6. The elements of the target were tungsten and copper, and a composite target and single target were simulated by setting different thickness parameters depending on energy. The accumulation of energy generated through interaction with the collided target was evaluated at 0.1-mm intervals, and F6 tally was used. The results indicated that less than 3% reference error was maintained according to the MCNP recommendations. At 6, 8, 10, 15, 18, and 20 MeV, the energy accumulation peaks identified for each target were 0.3 mm in tungsten, 1.3 mm in copper, 1.5 mm in copper, 0.5 mm in tungsten, 0.5 mm in tungsten, and 0.5 mm in tungsten. For 8 and 10 MeV in a single target consisting only of copper, the movement of electrons was confirmed at the end of the target, and the proportion of escaped electrons was 0.00011% and 0.00181%, respectively.

• Resources Recycling
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• v.30 no.4
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• pp.54-63
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• 2021

Vanadium and tungsten can be obtained by separating/recovering the leaching solution from a spent SCR DeNO_X catalyst using the soda roasting-water leaching process. Therefore, in this study, the adsorption/desorption mechanism of vanadium and tungsten in an ion-exchange column was investigated using Lewatit MonoPlus MP 600, a strong basic anion exchange resin. The operating conditions for the separation of vanadium and tungsten in the ion-exchange column was intended to present. By conducting a continuous adsorption experiment in a pH 8.5 solution, the adsorption capacity of vanadium and tungsten was found to be 44.75 and 64.92 mg/(g of resin), respectively, which showed that the adsorption capacity of tungsten was larger than that of vanadium because of the difference in ion charge. Vanadium has a higher affinity for MP 600 than tungsten. Consequently, as the vanadium-containing solution is eluted through the ion exchange resin onto which tungsten is adsorbed, the adsorbed tungsten is exchanged with vanadium and desorbed. A continuous experiment was performed with a solution of vanadium and tungsten prepared at the same concentration as the spent SCR DeNO_X catalyst leachate. The adsorption capacity of vanadium was found to be 48.72 mg/(g of resin) and 80% of the supplied vanadium was adsorbed; in contrast, almost no tungsten was adsorbed. Therefore, vanadium and tungsten were separated effectively. The ion exchange resin was treated with 2 M HCl at 15 mL/h, and 97.7% of the vanadium(99% purity) could be desorbed. After desorption, NH₄Cl was added to precipitate ammonium polyvanadate at 90℃ and recover 93% of the vanadium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.129-132
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• 1998

In this paper, we have studied the effect of electron reflection on shadow mask on which tungsten oxide film is coated and have studied the variation of beam mislanding with coating thickness in CRT. We found the method to be able to control coating thicknessed and optimum coating thickness of tungsten oxide film was 1∼2$\mu\textrm{m}$. Mislanding of electron beam was reduced about 20∼48% with increasing coating thickness in CRT

• Journal of the Korean institute of surface engineering
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• v.31 no.1
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• pp.45-53
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• 1998

Sharp tips are commonly used for applications in fields as diverse as nanolithography, lowvoltage field emitters, emitters, nanoelectroniecs, electrochemisty, cell biology, field-ion and electron microscopy. tungsten wire, mater만 used in this experiment, which test the chip of wafer has been used to the needle of probe card. Tungsten wire was sharpened by electrochemical etching methode to get a typical tip shape.