• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.78-81
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• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.749-751
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• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.173.2-173
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• 2003

• Journal of Magnetics
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• 제22권2호
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• pp.275-280
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• 2017

A magnetic-field tunable 2.4 GHz microwave bandpass filter having insertion loss < -5dB on an FR4 substrate with the flaky magnetic material was designed and characterized. The tunability in the designed bandpass filter was achieved by adhering soft magnetic materials on top of the device. This soft magnetic material can be composed of ferromagnetic substance or ferrimagnetic substance. The performance of the designed bandpass filter under its influence is investigated. The frequency offset ratio changes over 30 %. There is over 20 % change in the center frequency towards the lower frequency region due to this application. These magnetic material layers achieved the center frequency shift and bandwidth extension without actually changing the original structure of the device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.

• Journal of Electrical Engineering and Technology
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• 제2권3호
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• pp.391-395
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• 2007

MgO enhanced $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ thick films have been fabricated by a tape casting and firing method for tunable devices on the microwave frequency band. In order to improve ferroelectric properties, the composite thick films enhanced with MgO on BST have been asymmetrically annealed by a focused halogen beam method. Dielectric constants of composite thick films are changed from 1050 to 1300 at 100 kHz after 60 s and 150 s annealing by the focused halogen beam. Even though no prominent changes were previously observed from the thick films before and after annealing in terms of chemical composition and surface morphology, it is clear that the average particle size of the thick films calculated by Scherrer's formula were increased by annealing. Furthermore, a strong correlation between particle size and dielectric constant of the composite thick films has been observed; dielectric constant increases with increased particle size. This has been attributed to the increased volume of ferroelectric domain due to increased particle sizes. As a result, the tuning range was improved by halogen beam annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.