• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.33-38
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• 2009

The effect of ${Y_2}{O_3}$ as a sintering additive on thermal conductivity and microstructure of pressureless sintered AIN ceramics was investigated at sintering temperature range from 1,700 to $1,900^{\circ}C$. ${Y_2}{O_3}$ added AIN specimens showed higher densification rate than pure AIN because of the formation of the yttrium aluminates secondary phase by reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ of AIN surface. The thermal conductivity of AIN specimens was promoted by the addition of ${Y_2}{O_3}$ in spite of the formation of secondary phase in AIN gram boundaries and grain boundary triple junction, because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AIN lattice which is primary factor of thermal conductivity. The them1al conductivity of AIN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly. the thermal conductivity of AIN specimen sintered at $1,900^{\circ}C$ for 5 hours improved over 20 %. $141\;Wm^{-1}K^{-1}$, compared with the specimen sintered at $1,900^{\circ}C$ for 1 hour.

• Journal of the Korean Electrochemical Society
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• v.4 no.2
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• pp.58-64
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• 2001

YSZ ($8mol\%$ yttria-stabilized zirconia)-modified LSM $(La_{0.85}Sr_{0.15}MnO_3)$ composite cathodes were fabricated by formation of YSZ film on triple phase boundary (TPB) of LSM/YSZ/gas. The YSZ coating film greatly enlarged electrochemical reaction sites from the increase of additional TPB. The composite cathode was formed on thin YSZ electrolyte (about 30 Um thickness) supported on an anode and then I-V characterization and AC impedance analyses were performed at temperature between $700^{\circ}C\;and\;800^{\circ}C$. As results of the impedance analysis on the cell at $800^{\circ}C$ with humidified hydrogen as the fuel and air as the oxidant, R1 around the frequency of 1000 Hz represents the anode Polarization. R2 around the frequency of 100Hz indicates the cathode polarization, and R3 below the frequency of 10 Hz is the resistance of gas phase diffusion through the anode. The cell with the composite cathode produced power density of $0.55\;W/cm^2\;and\;1W/cm^2$ at air and oxygen atmosphere, respectively. The I-V curve could be divided into two parts showing distinctive behavior. At low current density region (part I) the performance decreased steeply and at high current density region (part II) the performance decreased gradually. At the part I the performance decrease was especially resulted from the large cathode polarization, while at the part H the performance decrease related to the electrolyte polarization.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.75-81
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• 2010

The feasibility of using the thin film technology in utilizing lanthanum strontium manganite (LSM) for a solid oxide fuel cell (SOFC) cathode in a low-temperature regime is investigated in this study. Thin film LSM cathodes were fabricated using pulsed laser deposition (PLD) on anode-supported SOFCs with yttria-stabilized zirconia (YSZ) electrolytes. Although cells with a 1 ${\mu}m$-thick LSM cathode showed poor low-temperature cell performance compared to that of a cell with a bulk-processed cathode due to the lack of a triple-phase boundary length, the cell with 200 nm-thick gadolinia-doped ceria (GDC) inserted between the LSM and YSZ showed enhanced performance and more stable operation characteristics in a comparison of a cell without a GDC layer. We postulate that the GDC layer likely improved the cathode adhesion, therefore contributing to the improvement of the cell performance instead of serving as an interfacial reaction buffer.

• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.50-55
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• 2011

To enhance the performance of a MEA (membrane electrode assembly) in a polymer electrolyte membrane fuel cell (PEMFC), optimum contents of Nafion ionomer as electrolyte in the 20 and 40 wt% Pt/C used in electrodes were examined. Variety characterization techniques were applied to examine optimum Nafion contents: cell performance test, electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV). According to Pt wt% supported on carbon support, it has been observed that polarization, ohmic, and mass transfer resistances were changed so that the cell performance was significantly dependent on the content of Nafion ionomer. Optimum Nafion ionomer contents in the 20 wt% Pt/C and 40 wt% Pt/C were showed 35 wt% and 20 wt%, respectively. This is due to different surface area of the Pt/C catalyst, and formation of triple phase boundary seems to be affected by the Nafion contents.

• Journal of Hydrogen and New Energy
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• v.33 no.6
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• pp.723-732
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• 2022

Cracking ammonia inside solid oxide fuel cell (SOFC) stack is a compact and simple way. To prevent sharp temperature fluctuation and increase cell efficiency, the decomposition reaction should be spread on whole cell area. This leading to a question that, how does anode thickness affect the conversion rate of ammonia and the cell voltage? Since the 0D model of SOFC is useful for system level simulation, how accurate is it to use equilibrium solver for internal ammonia cracking reaction? The 1D model of ammonia fed SOFC was used to simulate the diffusion and reaction of ammonia inside the anode electrode, then the partial pressure of hydrogen and steam at triple phase boundary was used for cell voltage calculation. The result shows that, the ammonia conversion rate increases and reaches saturated value as anode thickness increase, and the saturated thickness is bigger for lower operating temperature. The similar cell voltage between 1D and 0D models can be reached with NH₃ conversion rate above 90%. The 0D model and 1D model of SOFC showed similar conversion rate at temperature over 750℃.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.237-241
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• 2008

Hot-press sintering of AlN ceramics were carried out with $Y_2O_3$ as sintering additive at a sintering temperature $1,750{\sim}1,850^{\circ}C$. The effect of $Y_2O_3$ addition and sintering time on sintering behavior and thermal conductivity of AlN ceramics was investigated. $Y_2O_3$ added AlN showed noticeably higher denazification rate than pure AlN. The thermal conductivity of AlN specimens was promoted by the addition of $Y_2O_3$ in spite of the formation of YAG secondary phase in AlN grain boundaries and grain boundary triple junction because $Y_2O_3$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. Typically, the thermal conductivity of 5 wt% $Y_2O_3$ added specimen was dramatically improved by the increase of sintering time because the elimination of YAG secondary phases from the grain boundary due to the evaporation, as well as the grain-growth of AlN grains.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.6
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• pp.527-534
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• 2015

This study offers a novel method for improving the physical contact between the anode and fuel in a direct carbon fuel cell (DCFC): a direct generation of carbon in a porous Ni anode through the thermal decomposition of gaseous hydrocarbons. Three kinds of alkane hydrocarbons with different carbon numbers (CH4, C2H6, and C3H8) are tested. From electron microscope observations of the carbon particles generated from each hydrocarbon, we confirm that more carbon spheres (CS), carbon nanotubes (CNT), and carbon nanofibers (CNF) were identified with increasing carbon number. Raman scattering results revealed that the carbon samples became less crystalline and more flexible with increasing carbon number. DCFC performance was measured at $700^{\circ}C$ with the anode fueled by the same mass of each carbon sample. One-dimensional carbon fuels of CNT and CNF more actively produced and had power densities 148 and 210 times higher than that of the CS, respectively. This difference is partly attributed to the findings that the less-crystalline CNT and CNF have much lower charge transfer resistances than the CS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).