• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.773-776
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• 2007

A microstructure array has been proposed for micro plasma generation using electroplating and double exposed process. A stable atmospheric plasma has been generated at a low voltage by utilizing the micro electrode gap. Self-aligned microstructure can provide uniform electrode overlap with precisely controlled gap between the electrodes. The proposed structure allows for triode operation, which can expand the generated plasma over a large area by applying a lateral electric field. Electrical characteristics of the micro triode confirm the large numbers of the plasma ions are drifted to the secondary cathode by the lateral electrical field.

• Journal of Electrical Engineering and Technology
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• v.3 no.1
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• pp.121-124
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• 2008

This paper presents the fabrication and field emission of carbon nanotube field emitters for a micro mass spectrometer. The carbon nanotube is an adequate material as a field emitter since it has good characteristics. We have successfully fabricated a diode field emitter and a triode field emitter. Each field emitter has been constructed using several micromachining processes and a thermal CVD process. In the case of the diode field emitter, to increase the electric field, the carbon nanotubes are selectively grown on the patterned nickel catalyst layer. The electron current of the diode field emitter is 73.2 ${\mu}A$ when the anode voltage is 1100V. That of the triode field emitter is 3.4 pA when the anode voltage is 1000V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1016-1019
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• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate [$Fe(II)(CH_3COO)_2$] solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1530-1533
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• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1455-1458
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• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate $[Fe(II)(CH_3COO)_2]$ solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under-gate type triode structure.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1184-1187
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• 2002

In this paper, we propose a Rail-to-Rail OTA using equivalent MOSFETs without cutoff region, which operate in triode and saturation regions. The proposed circuit has a merit that its input range is not limited due to voltage drop of current mirrors. The simulation results of the proposed circuit are shown. From the simulation results, the linearity of the proposed circuit is improved when input voltage is from 2V to 3V.

• The Journal of the Acoustical Society of Korea
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• v.19 no.1
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• pp.84-88
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• 2000

In this paper, a low voltage CMOS analog four-quadrant multiplier is presented. The proposed multiplier is composed of two fully differential transconductors and lowers supply voltage down to VT+2VDS,sat+VDS,triode. The designed analog four-quadrant multiplier has simulated by HSPICE using 0.25㎛ n-well CMOS process with a 1.2V supply voltage. Simulation results show that the THD can be 1.28% at maximum differential input of 0.7VP-P.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.76-79
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• 2003

The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.149-156
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• 1996

Conducting diamond-like carbon films are synthesized using Triode Magnetron Sputtering-Plasma Enhanced Chemical Vapor Deposition(TMS-PECVD), and are examined by four point probe, microhardeness tester, and scanning electron miscroscopy(SEM). As the target bias and Ar/CH$_4$, ratio increase, the electrical resitivity and microhardness of the films are found to decrease, and also, their surface morphologies tend to be rough. While the resistivities of the films are shown to increase in proportion to the increase of the substrate bias, the microhardness of the films is shown to be maximun value(1600kg/$\textrm{mm}^2$) at a certain substrate bias(-70V). We can obtain the conducting diamond-like carbon films with the microhardness of 1600(kg/$\textrm{mm}^2$) and electrical resitivity of 16($\Omega$cm) at the process condition such as target bias -400V, substrate bias -70V, and Ar/$CH_4$ ratio 20.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.83-83
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• 2001