• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.90.2-90.2
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• 2012

Geosynchronous electron flux dropouts are most likely due to fast drift loss of the particles to the magnetopause (or equivalently, the "magnetopause shadowing effect"). A possible effect related to the drift loss is the radial diffusion of PSD due to gradient of PSD set by the drift loss effect at an outer L region. This possibly implies that the drift loss can affect the flux levels even inside the trapping boundary. We recently investigated the details of such diffusion process by solving the diffusion equation with a set of initial and boundary conditions set by the drift loss. Motivated by the simulation work, we have examined observationally the energy spectrum and pitch angle distribution near trapping boundary during the geosynchronous flux dropouts. For this work, we have first identified a list of geosynchronous flux dropout events for 2007-2010 from GOES satellite electron measurements and solar wind pressures observed by ACE satellite. We have then used the electron data from the Time History of Events and Macroscale Interactions during Substorms (THEMIS) spacecraft measurements to investigate the particle fluxes. The five THEMIS spacecraft sufficiently cover the inner magnetospheric regions near the equatorial plane and thus provide us with data of much higher spatial resolution. In this paper, we report the results of our investigations on the energy spectrum and pitch angle distribution near trapping boundary during the geosynchronous flux dropout events and discuss implications on the effects of the drift loss on the flux levels at inner L regions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.267.1-267.1
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• 2016

본 연구에서는 nematic 액정의 종류 중 하나인 5CB (4-Cyano-4'-pentylbiphenyl) 물질을 박막 트랜지스터 (TFT)의 passivation 층으로 사용했을 때 그 전기적 특성향상을 확인하였다. RF-magnetron sputtering법으로 증착된 비정질 InGaZnO 박막을 활성층으로 사용한 TFT를 제작하여 그 활성층 위에 drop형식으로 passivation 하였다. 그 결과, drain current (I_DS)가 약 10배 정도 증가하고, linear region(V_D=0.5V)에서 mobility와 subthreshold slope(SS)이 각각 6.7에서 12.2, 0.3에서 0.2로 향상되는 것이 보였다. 이것은 gate bias가 인가되었을 때 freedericksz 전이를 통한 액정의 배향과 이때 형성된 dipole 형성에 의한 것으로 보이며, 이러한 LC의 배향은 편광현미경을 통하여 표면과 수직으로 배향한다는 사실을 확인 할 수 있었고 이 LC-passivation된 a-IGZO TFT의 전기적 특성의 향상에 대한 mechanism을 제시하였다. 그리고 배향한 LC가 가지는 dipole에 의해 bias stress 상황에서 독특한 electron trapping과 recovery의 증폭효과가 나타났다. V_G=+20V의 positive gate bias stress를 1000s동안 가했을 때, passivation되지 않은 a-IGZO TFT의 경우 +4V의 threshold voltage shift(${\Delta}V$_TH)가 발생되었고, 바로 -20V의 negative gate bias를 30s간 가해주었을 때 -2.5V의 ${\Delta}V$_TH가 발생하였다. 반면 LC-passivation된 a-IGZO TFT의 경우 각각 +5V와 -4V의 ${\Delta}V$_TH로 더 큰 변화를 가져왔다. 이러한 LC에 의한 electron trapping/recovery 증폭효과에 대한 model을 제시하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.413-420
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• 2020

Lu₃Al_5-xGa_xO₁₂:Ce³⁺,Cr³⁺ powders are prepared using a solid-state reaction method. To determine the crystal structure, Rietveld refinement is performed. The results indicate that Ga³⁺ ions preferentially occupied tetrahedral rather than octahedral sites. The lattice constant linearly increases, obeying Vegard's law, despite the strong preference of Ga³⁺ for the tetrahedral sites. Increasing x led to a blue-shift of the Ce³⁺ emission band in the green region and a change in the emission intensity. Persistent luminescence is observed from the powders prepared with x = 2-3, occurring through a trapping and detrapping process between Ce³⁺ and Cr³⁺ ions. The longest persistent luminescence is achieved for x = 2; its lifetime is at least 30 min. The findings are explained using crystal structure refinement, crystal field splitting, optical band gap, and electron trapping mechanism.

• Transactions of Materials Processing
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• v.30 no.5
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• pp.226-235
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• 2021

The strain aging behavior of a low carbon dual phase steel was examined in two conditions: representing room temperature strain aging (100 ℃ × 1 hr after 7.5 % prestrain) and bake hardening process (170 ℃ × 20 min after 2 % prestrain), basing on carbon effective diffusion and dislocation distribution. The first principle calculations revealed that (Mn or Cr)-vacancy-C complexes exhibit the strongest attractive interaction compared to other complexes, therefore, act as strong trapping sites for carbon. For room temperature strain aging condition, the carbon effective diffusion distance is smaller than the dislocation distance in the high dislocation density region near ferrite/martensite interfaces as well as ferrite interior considering the carbon trapping effect of the (Mn or Cr)-vacancy-C complexes, implying ineffective Cottrell atmosphere formation. Under bake hardening condition, the carbon effective diffusion distance is larger compared to the dislocation distance in both regions. Therefore, formation of the Cottrell atmosphere is relatively easy resulting in to a relatively large increase in yield strength under bake hardening condition.

• Current Optics and Photonics
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• v.2 no.1
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.22 no.6
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• pp.397-407
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• 1990

Surface phytoplankton biomass was measured at approxinately one month intervals from July 1986 to August 1987. There was a peak phytoplankton biomass in the very low salinity region during summer and autumn when river discharge was low. The peak biomass occurred independent of the tidal state, location of nutrient input, nutrient concentration and temperature. The peak biomass are probably caused by the hydrodynamic trapping, density-seletive retention of particles by esturarine circulation.

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.32-32
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• 2003

In the neuron, SNARE (soluble N-ethylmaleimide-sensitive factor attachment protein receptors) assembly plays a central role in driving membrane fusion, a required process for neurotransmitter release. In the cytoplasm, vesicular SNARE VAMP2 (vesicle-associated membrane protein 2) engages with two plasma membrane SNAREs syntaxin 1A and SNAP-25 (synaptosome-associated protein of 25 kDa) to form the core complex that bridges two membranes. While various factors regulate SNARE assembly, the membrane also plays the regulatory role by trapping VAMP2 in the membrane. The fluorescence and EPR analyses revealed that the insertion of seven C-terminal core-forming residues into the membrane controls complex formation of the entire core region, even though preceding 54 core-forming residues are fully exposed and freely moving. When two interfacial Trp residues in this region were replaced with hydrophilic serine residues, the mutation supported rapid complex formation.