• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Proceedings of the ESK Conference
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• 1992.10a
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• pp.63-67
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• 1992

인간이 역사를 이루며 살아오면서 피복은 인간의 생활 수단으로서 빠뜨릴 수 없는 존재가 되었다. 사외 생활을 하면서 인간은 자신을 보호하고 남에게 자신의 이미지를 전달하고 자신의 욕구를 표출하면서 만족시키는데 있어 의복은 가장 중요한 역활을 하고 있고 인간 역시 그러한 것들을 의복에 의존하고 있는 것이다. 그러나 정상인을 위한 의복만 취급되어지는 시장에서 신체장애자들은 정상인보다도 더 세심하게 기능들이 고려된 의복이 필요함에도 불구하고 의복의 기능들을 생각하면서 의복을 선택할 수가 없다. 이러한 사앙들이 대두되면서 현대에 들어 신체 장애자 의복에 있어서 불편함을 없애고 보다 적합한 의복을 만들기 위한 연구가 진행되었다. 신체 장애자의 의복 연구는 Ward가 이 부분에 관심을 표명한 이후 임상 의사들에 의해 연구가 이루어지기 시작했다. 우리나라에서도 1976년 심성식의 한국 신체 장애자의 의복에 관한 연구를 기점으로 이 분야의 관심도가 높아지고 있으나 아직까지는 전반적으로 부족한 실정이다. 특히 위생적인 분야에서는 자료가 매우 부족하다. 이에 본 연구에서는 휠체어를 사용하는 하지 마비자의 체표 면을 떠서 기성복 패턴과 비교를 통해 보다 편안한 바지 패턴을 제시하고, 여름철에 많이 사용하는 직물로 바지를 제작하고 착용시킨후 인체 생리 반응을 분석하여 여름철에 쾌적한 바지를 알아 보았다. 이 연구를 통해 일반인과는 생활 자세가 다른 휠체어를 사용하는 하지 마비자와 일반인이 입는 기성복 바지를 착용 했을 때 생기는 불합리한 요소들을 고려하여 미적이고 기능적 및 위생적인 측면에서 신체 장애자에게 보다 적합한 바지를 제작하기 위한 기초 자료를 제공하고자 한다.값은 $f^{m}$ (p-1)-1 이다. (n=2m)이 많고 흡연 등의 만성 자극 요인이 있으며 술후 음성 호전에 걸리는 기간이 길어 보다 복합적인 측면에서 치료에 임하여야 할 것으로 사료된다. with such configuration.trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.130-134
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• 2009

A new long persistent phosphors of $CaZrO_3$ was synthesized at high temperature with weak reduction atmosphere by a traditional solid state reaction method. Photoluminescence spectra analysis showed that the $CaZrO_3$ doped with $Tb^{3+}$ emitted green-yellow emission caused by the energy level transition from the $^5D_3$ and $^5D_4$ to $^7F_1{\sim}^7F_6$. The main emission spectra of 542 nm peak by the $^5D_4{\rightarrow}^7F_5$ transition was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The afterglow emission spectra of $CaZrO_3:Tb^{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. After the 254 nm ultraviolet light excitation source was switched off, the green-yellow long persistent phosphor can be observed which could last for 8 h in the limit of light perception of dark-adapted human eyes ($0.32\;mcd/m^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.361-364
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• 2009

KEPRI has studied planar type SOFC stacks using anode-supported single cells and kW class co-generation systems for residential power generation. A 1kW class SOFC system consisted of a hot box part, a cold BOP part and a water reservoir. A hot box part contains a SOFC stack made up of 48 cells with $10{\times}10cm^2$ area and ferritic stainless steel interconnectors, a fuel reformer, a catalytic combustor and heat exchangers. Thermal management and insulation system were especially designed for self-sustainable operation. A cold BOP part was composed of blowers, pumps, a water trap and system control units. When a 1kW class SOFC system was operated at $750^{\circ}C$ with hydrogen, the stack power was 1.2kW at 30 A and 1.6kW at 50A. Turning off an electric furnace, the SOFC system was operated using hydrogen and city gas without any external heat source. Under self-sustainable operation conditions, the stack power was about 1.3kW with hydrogen and 1.2kW with city gas respectively. The system also recuperated heat of about 1.1kW by making hot water. Recently KEPRI developed stacks using $15{\times}15cm^2$ cells and tested them. KEPRI will develop a 5 kW class CHP system using $15{\times}15cm^2$ stacks by 2010.

• Journal of Microbiology and Biotechnology
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• v.23 no.9
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• pp.1221-1228
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• 2013

Two lipase genes (bpl1 and bpl3) from Antarctic Bacillus pumilus strains were expressed in Bacillus subtilis. Both recombinant lipases BPL1 and BPL2 were secreted to the culture medium and their activities reached 3.5 U/ml and 5.0 U/ml, respectively. Their molecular masses apparent using SDS-PAGE were 23 kDa for BPL1 and 19 kDa for BPL3. Both lipases were purified to homogeneity using ammonium sulfate precipitation and HiTrap SP FF column and Superose 12 column chromatographies. The final specific activities were estimated to be 328 U/mg for BPL1 and 310 U/mg for BPL3. Both lipases displayed an optimum temperature of $35^{\circ}C$, similar to other mesophilic enzymes. However, they maintained as much as 70% and 80% of the maximum activities at $10^{\circ}C$. Accordingly, their calculated activation energy at a temperature range of $10-35^{\circ}C$ was 5.32 kcal/mol for BPL1 and 4.26 kcal/mol for BPL3, typical of cold-adapted enzymes. The optimum pH of BPL1 and BPL3 was 8.5 and 8.0, respectively, and they were quite stable at pH 7.0-11.0, showing their strong alkaline tolerance. Both lipases had a preference toward medium chain length ($C_6-C_{10}$) fatty acid substrates. These results indicate the potential for the two Antarctic B. pumilus lipases as catalysts in bioorganic synthesis, food, and detergent industries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.