• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.273-274
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• 2005

Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPc(20nm)/$C_{60}$(40nm)/BCP/Al(150nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.

• ETRI Journal
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• v.32 no.4
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• Vacuum Magazine
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• v.2 no.2
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• pp.12-16
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• 2015

Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.11
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• pp.21-26
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• 2005

We propose a fully converged Ethernet and TDM transport system. Developed Ethernet and TDM convergence system can support not only L2 VPN service and premium multimedia service based on MPLS protocol but also TDM leased line service, simultaneously. Developed convergence system can provide high reliability for Ethernet packet due to support protection and restoration function of circuit based networks. Evaluation for Ethernet and TDM path was successfully performed to show the typical application of the proposed system in the legacy networks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.273-279
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• 2006

High-$T_c$ superconducting (HTSC) power cable is one of the interesting parts in power application using HTSC wire. However, its stacked structure makes the current distribution between conducting layers non-uniform due to difference between self inductances of conducting layers and mutual inductances between two conducting layers, which results in lower current transmission capacity of HTSC power cable. In this paper, the transport current distribution between conducting layers was investigated through the numerical analysis for the equivalent circuit of HTSC power cable with a shield layer, and compared with the case of without a shield layer. The transport current distribution due to the increase of the contact resistance in each layer was improved. However, its magnetization loss increased as the contact resistance increased. It was confirmed from the analysis that the shield layer was contributed to the improvement of the current distribution between conducting layers if the winding direction and the pitch length were properly chosen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.535-538
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• 2004

Superconducting transmission power cable is one of interesting parts in power application using high temperature superconducting wire. One of important parameters in high-temperature superconduting (HTSC) cable design is transport current distribution because it is related with current transmission capacity and AC loss. In this paper, the transport current distribution at conducting layers was investigated through the analysis of the equivalent circuit for HTSC power cable with shield layer and compared with the case of without shield layer. The transport current distribution due to the pitch lenght was improved in the case of HTSC power cable with shield layer from the analysis.

• Progress in Superconductivity and Cryogenics
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• v.7 no.4
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• pp.28-31
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• 2005

To verify the feasibility of bifilar winding type superconducting fault current limiter (SFCL) using BSCCO tape, two types of magnets were fabricated and tested by short-circuit in this research. Even if the FCL using high Tc superconducting (HTS) tape has zero resistance in normal state, it needs to be wound as a bifilar winding for zero inductance. Solenoid type and pancake type bifilar winding magnets are designed and fabricated with the same length of BSCCO tape. The test system consists of AC power supply, transformer, fault switch, load and bifilar winding magnet. The applied AC voltages during fault duration, 0.1s, were from 0.5V to 20V. The test results without bifilar winding magnet were compared with those with each type magnets. The test results include voltage against magnet, transport current and generated resistance curve. Thermal stability, the recovery time, was studied from the results of two type magnets. The pancake type was the most effective to limit fault current but the solenoid type was thermally the most stable. From this research, short-circuit characteristics of the two types were obtained.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.204-207
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• 2003

This paper presents the electrical properties of PTFE (polytetrafluoroethylene) nozzle for circuit breaker. PTFE has been used widely as a nozzle material for circuit breaker. In the arcing environment in a circuit breaker, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material lead to the depolymerization and eventually lead to the generation of decomposed gas as well as some isolated carbon particles. The generation of the decomposed gas in the depth of the material causes inner explosion. The surface of nozzle becomes uneven. The flow of gas is not uniform due to the unevenness of the surface. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Dielectric constant, dissipation factor, electrical resistivity and dielectric strength of PTFE composites were investigated.