• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.115-120
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• 2021

In this study, composite transparent electrodes were fabricated either from a conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) or silver nanowire (AgNW). Three transparent electrodes such as PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW were fabricated. As for a transparent electrode, measured sheet resistance values were 89.6, 60.6 and 28.6 Ω/sq, and the transmittance values were 80.2, 82.0 and 83.8% while surface roughness (Rq) values were 4.1, 8.1, 20.4 nm for PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW, respectively. To verify the overall performance of these composite electrodes, we applied these electrodes to the top electrode of the solution-processed organic solar cells (OSCs). PEDOT:PSS provided the best performance with a fill factor (FF) of 51.2% and a photoconversion efficiency (PCE) of 2.2%, while traditional metal top electrode OSC provided FF of 60.5% and PCE of 3.1%.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• ETRI Journal
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• 제35권4호
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• pp.730-733
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• 2013

In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국태양에너지학회 논문집
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• 제32권4호
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• pp.51-58
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• 2012

This study aims to analyze characteristics of Cell surface temperature and generated power performance for improving PV(Photovoltaic) system condition according to the cell opening ratio of transparent crystal PV system at Spandrel of curtain-wall. For this purpose, alternatives were classified for eight different cases that opening ratio of transparent crystal PV system varied from 0% to 70%, which was used by simulation tool, EnergyPlus. As results, it turned out that increasing opening ratio of transparent crystal PV system led higher PV surface temperature, back-sheet type was thus the most advantageous for decreasing surface temperature, annual generating efficiency, and annual accumulated generating power. Consequently, blocking off air space from outside insolation can advantageously keep to be better condition for generated power performance.

• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.65-65
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• 2008

본 논문의 목표는 유기태양전지의 재료적 특성중 반사율을 측정하여 가장 투명한 oranic solar cell을 제조하기 위한 기초자료를 도출하였다. 먼저 유기태양전지 재료중 일부인 PEDOT,PSS,MEH-PPV,P3HT를 수십 $\AA$ ~ 수백 $\AA$ 두께로 glass 기판위에 spin코팅하여 UV-VIS를 통해 파장열 반사 특성을 분석하였다. 또한, 동일한 시료를 사용하여 FESEM을 통한 표면 Morphology를 확인하였다. 최종적으로 가장 transparent 시료를 이용하여 oranic solar cell을 제작하여 efficiency와 reflectance characteristic를 측정하였다.

• 전기학회논문지
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• 제59권1호
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• pp.144-151
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• 2010

The shadowing effects lead to the serious power losses of the PV module. The shadowing effects are caused by several factors such as leafs, dust, antenna and clouds. The dye-sensitized solar cells are more economical than the conventional silicon solar cell that's why the dye-sensitized solar cells are recently focused on. We carried out research on the efficiency of the dye-sensitized solar cell depending on the level of shadow changing the formula of the circuit. The research on the efficiency of the large dye-sensitized solar cell depending on the level of shadow focused on commercialization was carried out. As the results, it is known that the series and parallel connection method is the best choice for the least losses of PV module assemblies. It is especially known that one more series connection is the best choice for the least losses about shadowing effects and current losses in the series and parallel connection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.