• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.48-49
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• 2006

Highly conductive and transparent films of Ga-doped ZnO have been prepared by pulsed laser deposition using a ZnO target with 3 wt% ${Ga_2}{O_3}$ dopant. Films with the resistivity as low as $3.3{\times}10^{-4}{\Omega}cm$ and the transmittance above 80 % at the wavelength of 400 to 800 nm can be fabricated on glass substrate at room temperature. It is shown that a stable resistivity for the use in oxidation ambient at high temperature can be obtained for the films. Heat treatments were performed to examine the thermal stability of ZnO and GZO films at ptemperature range from $100^{\circ}C$ to $400^{\circ}C$ in $O_2$ ambient for 30 minutes. The resistivity of ZnO film annealed at $400^{\circ}C$ increased by two orders of magnitude, in case of GZO film was relatively stable up to at $400^{\circ}C$. For practical applications at high temperatures the thermal stability of resistivity of GZO thin films might become an advantage for transparent electrodes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.1976-1981
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• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.108-108
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• 2009

ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.480-492
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• 1996

AZO (Aluminum doped Zinc Oxide) transparent conducting thin films were fabricated by reactive DC mangnetron sputtering method using zinc target containing 2 wt% of Al. Transition range with optimum transmittance and conductivity was obtained by contrlling partial pressure of reactive oxygen gas. Sputtering condition for this transition range could be kept stable by regulating the target voltage. According to XRD analysis, there was only one peak for (002) plane in AZO films and the films deposited in transition range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1254-1255
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 6" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify the optical properties of the AZO thin films, the transparency was tested with sputtering conditions using UV-visible spectroscopy. As a result, we got the transmittance properties over 80% and low resistivity in the sputtering conditions of DC 200[W], Ar 30 [sccm], 1 [mtorr], 20 [min].

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.