• Current Photovoltaic Research
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• 제3권1호
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• 한국표면공학회지
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• 제47권5호
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• pp.239-243
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• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

• 한국광학회지
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• 제19권4호
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• pp.249-254
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• 2008

새 구조의 액정 엑스선 감지기를 만들었다. 이것은 액정판을 만들고 유리판을 얇게 식각한 다음, 그 유리판 위에 반사막과 광전도층을 연속하여 입힌 구조이다. 새 구조의 액정엑스선 감지기는 공정의 안정성, 대면적화, 감도 등에서 이미 상품화된 엑스선 감지기와도 충분히 경쟁할 수 있으며, 따라서 성공적으로 상용화 할 수 있음을 확인했다.

• 한국분말재료학회지
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• 제26권1호
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• pp.40-44
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• 2019

Tungsten trioxide ($WO_3$) is a promising candidate as a photocatalyst because of its outstanding electrical and optical properties. In this study, we prepare $WO_3$ thin films by electrodeposition and characterize the photocatalytic degradation of methylene blue using these films. Depending on the voltage conditions (static and pulse), compact and porous $WO_3$ films are fabricated on a transparent ITO/glass substrate. The morphology and crystal structure of electrodeposited $WO_3$ thin films are investigated by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. An application of static voltage during electrodeposition yields a compact layer of $WO_3$, whereas a highly porous morphology with nanoflakes is produced by a pulse voltage process. Compared to the compact film, the porous $WO_3$ thin film shows better photocatalytic activities. Furthermore, a much higher reaction rate of degradation of methylene blue can be achieved after post-annealing of $WO_3$ thin films.

• 한국해양학회지:바다
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• 제18권1호
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• pp.1-12
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• 2013

황해 중동부 해역에서 2012년 9월에 동서방향으로 설정된 단면과 금강 하구 외측 저염수 지역의 정박지점에서 음향탐지기를 이용하여 음향 후방산란 구조(acoustic backscatter profile)를 측정하였으며 CTD로 물성구조도 관측하였다. 수심 50 m 부근 해역에 발달한 해저사주 주변에서 조석전선이 형성되었다. 이 사주의 동쪽에서 저조 때 음향탐지기로 관측된 내부파는 파고가 약 15 m, 평균파장이 500 m정도이며, 파형이 비선형 오목형 파(depression wave)였다. 이 내부파는 남동쪽으로 흐르는 조류가 사주를 지나면서 만든 조석내부파로 해석되었다. 약한 비선형성 단독 내부파 이론을 적용하였을 때 오목형 내부파들의 전파속도는 약 50 cm/s 정도이고, 주기는 16~18분 정도로 계산되었다. 강한 음향 산란층이 국지적으로 7 m 정도 상승된 지역의 해면에서 Dinoflagelates Cochlodinium에 의한 적조가 관찰되었다. 금강하구 외측 정박지점에서 한 시간간격으로 관측한 물성구조는 해륙풍과 조류에 따른 염분약층 깊이 변동을 보여 주었다. 창조류가 북동쪽으로 강하게 흐르고 육풍이 서쪽으로 7 m/s 이상 불었을 때에는 염분약층이 일시적으로 상승하였고, 음향구조 영상은 해면 하 약 5 m까지 복잡한 구조를 보였는데 포획과 관입 형태를 갖는 강하고 약한 산란신호의 기울어진 음향구조가 수 십초 간격으로 교대로 나타났다. 표면 혼합층에서의 이러한 음향구조는 황해 중동부 연안역에서는 처음으로 관측되었다. 음향 후방산란 영상과 탁도 자료는 창조류와 육풍에 의한 표층 취송류가 만드는 수직적인 유속차(shear)에 의해 맑은 하층수가 탁한 상층으로 관입 혹은 포획된 것임을 제시한다.

• 대한환경공학회지
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• 제28권11호
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• pp.1180-1185
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• 2006

오염된 퇴적물로부터 인 용출 저감을 위한 최적의 capping 소재를 개발하기 위해 lab-scale 실험을 25 L 아크릴 컬럼을 이용하여 실시하였다. 실험에 사용된 퇴적물 내 입도는 8.8 $\Phi$로 매우 세립한 clay로 조성되어 있으며, 유기탄소 함량($C_{org}$)은 2%로 높다. Batch 실험에 사용된 capping 소재는 Brucite($Mg(OH)_2$), Sea sand($SiO_2$), Granular-gypsum($CaSO_4{\cdot}2H_2O$), Double layer(brucite+sand)와 Control을 30일 동안 비교 평가하였다. 실험기간 동안 용출된 인의 flux는 14.6 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 9.5 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 5.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 4.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 3.1 $mg{\cdot}m^{-2}{\cdot}d^{-1}$로 Control>Sea sand>Granular-gypsum>Double layer>Brucite 순으로 각각 나타났다. Brucite를 적용한 컬럼의 경우, 인 용출 제어 효율이 70% 이상 높게 나타났으며, Sea sand를 적용한 경우에는 35%의 효율만을 보였다. 특히, Brucite를 적용한 컬럼의 표층 퇴적물내 pH는 $8.0{\sim}9.5$로 다소 높게 유지되었으며, 이러한 효과는 퇴적물을 약알카리성으로 유지하여 황산염환원균이 증식할 수 없는 환경을 조성하여 생물에 독성이 있는 $H_2S$ 발생을 억제시킬 수 있다. Gypsum을 적용할 경우, 퇴적물내 빠른 초기 속성화작용의 진행과 충분한 $SO_4^{2-}$-의 공급으로 methanogenesis 진행를 저하시킬 수 있다. 따라서 Brucite와 Gypsum을 적용할 경우, 퇴적물 내 인의 존재형태가 광물(mineral)의 형태인 $Mg_5(OH)(PO_4)_3$, pyrite, apatite-mineral의 형태로 진행되어 퇴적물로부터 인의 용출을 줄일 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.