• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.990-993
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• 2006

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode shows high transmittance over 70% in visible range. And the device with a Ba-Ag has a low turn on voltage and good electrical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.154-154
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• 2010

We have developed transparent OLED with green phosphorescent doped layer using transparent metal cathode deposited by thermal evaporation technique. Phosphorescent guest molecule, $Ir(ppy)_3$, was doped in host mCP for the green phosphorescent emission. Ca/Ag double layers were used as a cathode material of transparent OLED. The turn-on voltage of OLED was 5.2 V. The highest efficiency of the device reachs to 31 cd/A at 2 mA/$cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.339-341
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• 2009

A transparent plasma display was developed using transparent glass barrier ribs. Glass barrier ribs were fabricated via a wet etching process. Glass barrier ribs created using a top and bottom etching process showed better transparency compared to those created through only a top etching process. A see-through phosphor layer was obtained by coating the sidewall of the barrier ribs with a conventional opaque phosphor. A fabricated prototype of a transparent plasma display was clear enough to see the background beyond the panel and was well operated by a conventional driving scheme. The maximum luminance was 1150 cd/$m^2$ and the maximum luminous efficacy was 1.35 lm/W in a Ne+13.5%Xe gas-mixture and green cells.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.339-344
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• 2017

An all-transparent photodetector was fabricated by structuring $Cu_2O$/ZnO/AZO/ITO on a glass substrate. The visible-range transmittance was as high as 80%, which ensures clear vision forhuman eyes. High-transparency metal conductive oxides (p-type $Cu_2O$ and n-type ZnO) were appliedto form the transparent p/n junction. The functional AZO layer was adopted to improve the transparent photodetector performance between the ZnO and ITO, improving the photoresponses because of its electrical conductivity. To clarify the AZO functionality, a comparator device was prepared without the AZO layer in the formation of $Cu_2O$/ZnO/ITO/Glass. The $Cu_2O$/ZnO/AZO/ITO device provided a rectifying ratio of 113.46, significantly better than the 9.44 of the $Cu_2O$/ZnO/ITO device. In addition, the $Cu_2O$/ZnO/AZO/ITO device's photoresponses at short wavelengths were better than those of the comparator. The functioning AZO layer provides ahigh-performing transparent Cu oxide photodetector and may suggest a route for the design of efficient photoelectric devices.

• 전기학회논문지
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• 제67권6호
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1275-1276
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• 2008

In this study, a micro-cavity organic light-emittingdevice (OLED) with semi-transparent-Ag/AgO hole injecting layer (HIL) was fabricated and their performance was investigated. For the fabrication of OLEDs N,N-diphenyl-N,N-(3-methyphenyl)-1,1-biphenyl-4-4-diamine (TPD), known as a hole transporting material and tris (8-hydroxyquinolinato)-aluminum ($Alq_3$) as both electron-transporting layer (ETL) and emission layer (EML) were deposited using thermal evaporation technique. And Al layer as cathode was then deposited using thermal evaporation technique. Effects of the semi-transparent-Ag/AgO layers on the resulting OLED performance were investigated.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.873-877
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• 2006

We have fabricated top omission organic light emitting diodes with transparent Ba/Ag double layer cathodes deposited by using thermal evaporation method. The device structure was $glass/Ni(200nm)/2-TNATA(15 nm)/{\alpha}-NPD(15nm)Al_{q3}:C545T\;(1%,\;35nm)/BCP(5nm)/Ba(10nm)/Ag(8nm)$. The optical transmittance of the Ba(10 nm)/Ag(8 nm) layer was over 60 % in the visible wavelength region. The maximum efficiency of the device was $13.7\;cd/A\;at\;0.69\;mA/cm^{2}$ and the efficiency of over 10 cd/A was achieved at wide range of current densities and luminances.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3316-3318
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• 1999

PMMA(poly-methyl methacrylate) microlens array is fabricated using transparent acrylic resin. PMMA is commonly used material for plastic lens due to its excellent visibility larger than 90% and other optical characteristics so much close to those of glass. Orthodontic resin (DENTSPLY International Inc.), commonly used in dentistry, is an transparent acrylic resin kit including MMA liquid and polymerization powder. Their mixture results in PMMA through polymerization. Using the resin PMMA layer is formed on the substrate through spin-coating. Designed pattern of lens structure is transferred to PMMA layer by RIE (Reactive Ion Etching) with oxygen plasma. Final lens shape is formed by thermal treatment that causes PMMA to reflow, The thickness of PMMA spun on the substrate is $17{\mu}m$ that is also final sag of microlens, Designed diameters of the microlenses are $200{\mu}m$, $300{\mu}m$,and $500{\mu}m$, respectively.