• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.43.2-43.2
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• 2007

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.497-501
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• 2005

Dry film method was applied to fabricate lead-free transparent dielectric fur PDP(Plasma Display Panel). From various slurry compositions, it was able to find out the. best composition for producing high density green sheet. The slurry exhibited shear thinning characteristics which are known to be suitable fur producing a high quality green sheet. The thermal expansion coefficient of the fabricated transparent dielectric was measured to be $97{\times}10^{-7}/^{\circ}C$ which is close to the value of the glass substrate(PD-200). Cross sectional SEM of the transparent dielectric layer on PD-200 showed that the two layers were well attached each other with no observable gaps between them.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.13-17
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• 2023

Functional transparent electrode was achieved by metal oxide-metal-Metal oxide (OMO) structure. Tailoring of metal oxide and metal layers, optically transparent and electrically excellent OMO films were investigated. Silver (Ag) is adopted for the metal layer and Ag oxide (AgO) is reactively formed by flowing O₂ gas during the sputtering process. This spontaneous AgO formation from Ag simultaneously provides the good electrical interface with high transparency. Due to the feature of transparent electrode of OMO, it endows the shielding effect (SE) function of electromagnetic interference. Optically transparent and electrically conductive OMO electrode shows the high transmittance (83.7%) and low sheet resistance (6.5 Ω/☐) with SE of 29.54 dB.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.555-557
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• 2004

We report the effect of the particle size (D50) and PSD (Particle Size Distribution) of glass frit on the transparency of transparent dielectric layer of PDP. The milling efficiency of wet milling with water was the best among the dry milling, wet milling with IPA and wet milling with water. The transparency increased with the reduction of particle size of glass frit as the milling time increased. Also the transparency changed by the PSD of glass frit. Glass frits of broad PSD showed high transparency compared with the glass frits of sharp PSD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.601-604
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• 2008

We report on the Ag thickness effect on the electrical and optical properties of indium zinc tin oxide (IZTO)-Ag-IZTO multilayer electrode grown on a PET substrate and the surface plasmon effect of Ag layer on the optical properties of IZTO-Ag-IZTO electrode. Using an IZTO-Ag-IZTO multilayer with a total thickness below ~80 nm, we can obtain high-quality flexible electrode with very low sheet resistance, high transmittance, high work function and superior flexibility.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.601-604
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• 2006

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of $218nW/cm^{2}$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.52-59
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• 2000

In order to develop the transparent anti-static film with higher than 80% transparency to visible light, organic conductive compounds, N-methyl phenazinium 7,7,8,8-tetracyanoquinonedimethane (TCNQ) com-plex salts was synthesized and bar-coated on the polythylene terephthalate (PET) film using polymer binders. The best surface properties were obtained when acrylic binder was used. A single layer of TCNQ made of a acrylic binder showed a surface resistance of 10\ulcorner $\Omega$/ , a conductivity of 10\ulcorner S/cm, and a transparency of 75%. An optical microscopic examination revealed that the binder was first solidi-fied on the surface of PET film over which the needle-shaped TCNQ crystals were grown. An acrylic polyol coating over the TCNQ layer improved the transparency to 87%, becuase the acrylic polyol covers the surface of TCNQ crystals to reduce the surface roughness. This conductive material has thermal stability at room temperature and 4$0^{\circ}C$ over 4,000 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of 218 nW/$\textrm{cm}^2$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.