• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.457-458
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• 한국재료학회지
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• 제26권4호
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.31-35
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• 2014

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

• 태양에너지
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• 제12권2호
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• pp.18-27
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• 1992

졸-겔 기술에 의해 $WO_3$ 다충박막이 유리와 ITO coated glass 위에 증착되었다. 특성은 XRD, 분광광도계, DTA/TGA, SEM/EDAX 그리고 RBS에 의해서 분석되었다. 균질한 $WO_3$막은 유리기판위에 dipping속도 5mm/s에서 증착 되었으며 이 시료는 희석된 HCI 전해액을 사용하여 착색시킨 결과 낮은 근적외선 투과율을 나타내었다. DTA 결과 $380^{\circ}C{\sim}500^{\circ}C$ 범위의 gel data는 $WO_3$의 결정화 온도 형성을 결정하였으며 이 측정치는 졸-겔 박막의 결정화 온도와 일치하였다. RBS에 의해 착색되지 않은 $WO_3$ 졸-겔 막의 화학조성은 $WO_3$였다.

• Corrosion Science and Technology
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• 제20권4호
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• pp.196-203
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• 2021

To improve corrosion resistance and reduce the hydrogen uptake of 22MnB5, up to 5% Mg was added to the AlSi coating of 22MnB5. After hot-stamping and electrocoating were done on the metallic-coated specimen, the surface characteristics of the steel, hydrogen uptake content, and corrosion resistance were examined by transmittance electron microscopy, thermal desorption spectrometry, cyclic corrosion testing, and electrochemical impedance spectroscopy. Mg was investigated as MgO on the surface layer after hot-stamping while it existed as Mg₂Si before hot-stamping. The total hydrogen content of 22MnB5 was decreased along with the Mg content. However, there was no difference at 0.2 wt% or more. When a small amount of Mg was added, the coating corrosion resistance was decreased, but when it was added at around 1.0 wt%, the greatest corrosion resistance increase was seen. However, when 3 wt% or more was added excessively, the corrosion resistance was decreased. MgO on the surface was considered to suppress H uptake by the AlSi melting solution and increase the barrier effect of the coating.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.434-434
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• 2012

Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

• 한국재료학회지
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• 제23권1호
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• pp.59-66
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• 2013

Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.