• 제목/요약/키워드: Transition Metal oxides

검색결과 102건 처리시간 0.026초

산화물 반도체 가스 센서의 습도 의존성 제거 기술 (Humidity Dependence Removal Technology in Oxide Semiconductor Gas Sensors)

  • 박지호;윤지욱
    • 한국전기전자재료학회논문지
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    • 제37권4호
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    • pp.347-357
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    • 2024
  • Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

전기장 광화학 증착법에 의한 직접패턴 비정질 FeOx 박막의 제조 및 저항변화 특성 (Electric-field Assisted Photochemical Metal Organic Deposition for Forming-less Resistive Switching Device)

  • 김수민;이홍섭
    • 마이크로전자및패키징학회지
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    • 제27권4호
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    • pp.77-81
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    • 2020
  • Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

Fabrication, temperature-dependent local structural and electrical properties of VO2 thin films

  • Jin, Zhenlan;Hwang, In-Hui;Park, Chang-In;Han, Sang-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.169.2-169.2
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    • 2015
  • $VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

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음이온 교환막 알칼리 수전해를 위한 운전 조건 및 구성요소의 최적화 (Optimization of Operating Parameters and Components for Water Electrolysis Using Anion Exchange Membrane)

  • 장명제;원미소;이규환;최승목
    • 한국표면공학회지
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    • 제49권2호
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    • pp.159-165
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    • 2016
  • The hydrogen has been recognized as a clean, nonpolluting and unlimited energy source that can solve fossil fuel depletion and environmental pollution problems at the same time. Water electrolysis has been the most attractive technology in a way to produce hydrogen because it does not emit any pollutants compared to other method such as natural gas steam reforming and coal gasification etc. In order to improve efficiency and durability of the water electrolysis, comprehensive studies for highly active and stable electrocatalysts have been performed. The platinum group metal (PGM; Pt, Ru, Pd, Rh, etc.) electrocatalysts indicated a higher activity and stability compared with other transition metals in harsh condition such as acid solution. It is necessary to develop inexpensive non-noble metal catalysts such as transition metal oxides because the PGM catalysts is expensive materials with insufficient it's reserves. The optimization of operating parameter and the components is also important factor to develop an efficient water electrolysis cell. In this study, we optimized the operating parameter and components such as the type of AEM and density of gas diffusion layer (GDL) and the temperature/concentration of the electrolyte solution for the anion exchange membrane water electrolysis cell (AEMWEC) with the transition metal oxide alloy anode and cathode electrocatalysts. The maximum current density was $345.8mA/cm^2$ with parameter and component optimization.

Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device

  • Kim, Jang-Han;Kim, Hong-Ki;Jang, Ki-Hyun;Bae, Tae-Eon;Cho, Won-Ju;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.373-373
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    • 2014
  • Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

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전이 금속 산화물 기반 Interface-type 저항 변화 특성 향상 연구 동향 (Research Trends on Interface-type Resistive Switching Characteristics in Transition Metal Oxide)

  • 김동은;김건우;김형남;박형호
    • 마이크로전자및패키징학회지
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    • 제30권4호
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    • pp.32-43
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    • 2023
  • 저항 변화 메모리 소자(RRAM)는 저항 변화 특성을 기반으로 빠른 동작 속도, 간단한 소자 구조 및 고집적 구조의 구현을 통해 많은 양의 데이터를 효율적으로 처리할 수 있는 차세대 메모리 소자로 주목받고 있다. RRAM의 작동원리 중 하나로 알려진 interface type의 저항 변화 특성은 forming process를 수반하지 않고 소자 크기를 조절하여 낮은 전류에서 구동이 가능하다는 장점을 갖는다. 그 중에서도 전이 금속 산화물 기반 RRAM 소자의 경우, 정확한 물질의 조성 조절 방법과 소자의 신뢰성 및 안정성과 같은 메모리 특성을 향상시키기 위해 다양한 연구가 진행 중에 있다. 본 논문에서는 이종 원소의 도핑, 다층 박막의 형성, 화학적 조성 조절 및 표면 처리 등의 방법을 이용하여 interface type 저항 변화 특성의 저하를 방지하고 소자 특성을 향상시키기 위한 다양한 방법을 소개하고자 한다. 이를 통해 향상된 저항 변화 특성을 기반으로 한 고효율 차세대 비휘발성 메모리 소자의 구현 가능성을 제시한다.

페로브스카이트형 촉매계를 이용한 고정원 배가스로부터의 NOx 와 SOx의 동시제거 기술에 관한 연구 (The Studies on the Simultaneous Removals of NOx and SOx from Stationary Sources by using Perovskite type Catalysts)

  • 이병용;정석진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.475-479
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    • 1996
  • At present studies, we are going to suggest the new type of Perovskite derived catalysts which modify the defects of transition metals impregnated. Perovskite type catalyst is a typical mixed metal oxides, and there are "defect"s (from like that oxygen, cation, crystallic structure) were made by difference from composition, preparing method and so forth. And because this, its electro-magnetic character could be much changed. By using this phenomena, it could utilize the modification of adsorption/desorption characters as well as the catalytic activities in NOx reduction. Because perovskite type catalyst can exchange the metal of the each lattice site freely and it is possible to represent the peculiar.

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인가 전압에 따른 양극산화된 금속 산화물의 나노 구조 변화와 전기변색 응용 (Effects of applied voltages on nano-structures of anodized metal oixdes and their electrochromic applications)

  • 김태호;이재욱;김병성;전형진;나윤채
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.115.1-115.1
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    • 2016
  • Electrochemical anodization has been interested due to its useful way for the nano-scale architecture of metal oxides obtained from a metal substrate. By using this method, it is easy to control the morphology of the oxide materials by controlling electrochemical conditions. Among oxide materials obtained from the transition metals such as Ti, V, W, etc., in this paper, the morphological study of anodized $TiO_2$ was employed at various voltage conditions in fluoric based electrolyte, and the effects of applied voltage (sweep rate and retention time) on the tube morphologies were investigated. Furthermore, by using anodization of tungsten substrate (W), we fabricated the porous structure of $WO_3$ and provided merits of tailored structure for the hybridization of inorganic and organic materials as electrochromic (EC) applications. The hybrid porous $WO_3$ shows multi-chromic properties during the EC reactions at specific voltage conditions. From these results, the anodization process with tailoring nano-structure is one of the promising methods for EC applications.

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Characteristics of a Metal-loaded SnO2/WO3 Thick Film Gas Sensor for Detecting Acetaldehyde Gas

  • Jun, Jae-Mok;Park, Young-Ho;Lee, Chang-Seop
    • Bulletin of the Korean Chemical Society
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    • 제32권6호
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    • pp.1865-1872
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    • 2011
  • This study investigates the sensitivity of a gas sensor to volatile organic compounds (VOCs) at various operating temperatures and catalysts. Nano-sized powdered $WO_3$ prepared by sol-gel and chemical precipitation methods was mixed with various metal oxides. Next, transition metals (Pt, Ru, Pd, and In) were doped on the surface of the mixture. Metal-$WO_3$ thick films were prepared using the screen-printing method. The physical and chemical properties of the films were studied by SEM/EDS, XRD, and BET techniques. The measured sensitivity to VOCs is defined as the ratio ($R_a/R_g$) of resistance ($R_{air}$) of $WO_3$ film in the air to resistance ($R_{gas}$) of $WO_3$ film in a VOCs test gas. The sensitivity and selectivity of the films were tested with various VOCs such as acetaldehyde, formaldehyde, methyl alcohol, and BTEX. The thick $WO_3$ film containing 1 wt % of Ru and 5 wt % of $SnO_2$ showed the best sensitivity and selectivity to acetaldehyde gas at an operating temperature of 300 $^{\circ}C$.

수소 가압형 기계적 합금화법으로 제조한 MgHx-Nb2O5 산화물 복합 재료의 수소화 특성 평가 (Evaluations of Hydrogen Properties of MgHx-Nb2O5 Oxide Composite by Hydrogen Induced Mechanical Alloying)

  • 이나리;이수선;홍태환
    • 한국수소및신에너지학회논문집
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    • 제23권5호
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    • pp.429-436
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    • 2012
  • Mg and Mg-based alloys are regarded as strong candidate hydrogen storage materials since their hydrogen capacity exceeds that of known metal hydrides. One of the approaches to improve kinetic is addition of metal oxide. In this paper, we tried to improve the hydrogenation properties of Mg-based hydrogen storage composites. The effect of transition metal oxides, such as $Nb_2O_5$ on the kinetics of the Magnesium hydrogen absorption kinetics was investigated. $MgH_x$-5wt.% $Nb_2O_5$ composites have been synthesized by hydrogen induced mechanical alloying. The powder fabricated was characterized by X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (Fe-SEM), Energy Dispersive X-ray (EDX), BET and simultaneous Thermo Gravimetric Analysis / Differential Scanning Calorimetry (TG/DSC) analysis. The Absorption / desorption kinetics of $MgH_x$-5wt.% $Nb_2O_5$ (type I and II) are determined at 423, 473, 523, 573 and 623 K.