• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.3-10
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• 2008

Micro-electrical discharge machining (micro-EDM) is an effective method for machining all types of conductive materials regardless of hardness. Since micro-EDM is an electro-thermal process, the energy supplied by the pulse generator is an important factor in determining the effectiveness of the process. In this study, an investigation was conducted on the micro-EDM of tungsten carbide (WC) to compare the performance of transistor and resistance/capacitance (RC) pulse generators in obtaining the best quality micro-hole. The performance was measured by the machining time, material removal rate, relative tool wear ratio, surface quality, and dimensional accuracy. The RC generator was more suited for minimizing the pulse energy, which is a requirement for fabricating micro-parts. The smaller-sized debris formed by the low-discharge energy of RC micro-EDM could be easily flushed away from the machined zone, resulting in a surface free of burrs and resolidified molten metal. The RC generator also required much less time to obtain the same quality micro-hole in WC. Therefore, RC generators are better suited for fabricating micro-structures, producing good surface quality and better dimensional accuracy than the transistor generators, despite their higher relative tool wear ratio.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1121-1126
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• 2003

In this paper we show impulse generator which is important component in UWB communication. There is two steps to generate monocycle impulse. In first step, Gaussian pulse was made by operation of transistor switching and operation time of transistor switching. The second step the high pass filter change from Gaussian to Monocycle impulse. The result of this impulse generator is impulse whose pulse width is 0,9 ns in time domain and amplitude is +/-250 ㎷.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.91-95
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• 2004

The pulsed power system is widely available for use in pulse generator applications. Generally, the pulse generator is required for very short pulse width and high peak value. We have designed and fabricated our own pulsed type power system and through its use, we investigated microbe removal characteristics. This paper introduces a simple pulsed power system for removing various microbes caused by dirty water. This system includes a 2 times power supply circuit, IR2110 operated by using a fixed voltage regulator 7812 and 7805, and the switching MOSFET (Metal Oxide Semiconductor Field Effect Transistor). We can also control this process by using a PIC one chip microprocessor. As a result, we can obtain good removing characteristics of various microbes by adjusting the charging voltage, the pulse repetition rate and the electrical field inducing time.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.858-860
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• 2003

This paper introduces the drive system for 500MVA short-circuit generator. Drive system is usually low-voltage, but this system is 2300V high-voltage using Insulated Gate Bipolar Transistor(IGBT). Drive system consists of switchgear, 18-pulse transformer, converter(source bridge), inverter(load bridge) and control rack. In this paper, It describes the function and construction of each part.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.619-628
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• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.71-79
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• 2010

This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.21-26
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• 2016

This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.