• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.231-233
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• 1991

This paper discribes a study on the switching character of MOS-GTO and the design of gate drive circuit. Chopping power supply converter, synchronious and asyncronious motor speed adjustment, inverter, etc., needs low drive energy "high frequency" switches. To fulfill these need, switches must have rapid switching time and insulated gate control. MOS-GTO structure is well suited to these constraints. The power switch is serial installation of a GTO thyrister and a MOS Transistor. The gate of the GTO is linked to positive pole of the cascode structure via a MOS high voltage transistor and ground via a transient absorber diode. This high performance MOS-GTO assembly considerably increases the strength which facilitate the drive of GTO thyristers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.13-25
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• 1968

A detailed analysis of the transistor wide-band feedback amplifiers using the hybrid-$\pi$ equivalent circuit has been made. It is considered both for the low freqnency and for the high frequency. The expressions of the gain, bandwidth. input impedance and output impedance have been presented. It is shown that a series feedback amplifier should be driven from the voltage source and should drive into the low resistance load, and a shunt feedback amplifier should be driven from the current source and should drive into the high resistance load. It is also shown that these stages can be coupled without use of the buffer stage or coupling transformer.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.3
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• pp.273-280
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• 1990

To prevent the shoot-through phenomena in a PWM inverter, a short dead time is usually provided between a pair of switching transistors in the same leg of the inverter. In this approach, the amount of the dead time is designed to meet the worst case condition of the inverter transistors and the base drive elements. So, in normal cases, relatively large portion of the dead time is unnecessary and it results in an undesirablecurrent waveform distortion and generates ripple torque on the motor shaft. In this paper, a new base drive method to remove the undesirable portion of the dead time is described. The method senses the transistor on/off states to interlock the other transistor of the leg without the external dead time. Also, for the transistors of large current rating, the Darlington drive circuit is combined to the proposed method and is tested to verify the effectiveness. The experimental results of the proposed method are described and compared with those of the conventional dead time method.

• Journal of Advanced Marine Engineering and Technology
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• v.17 no.3
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• pp.60-69
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• 1993

The speed control associated with dc servo motors for direct-drive applications of mobile robot is considered in this study. Robot is moved by power wheeled steering of two dc servo motors mounted to it. In order to cooperate with micro-computer and to achieve the high-performance operation of dc servo motor, speed control system is composed of a digital Phase Locked Loop and H-type drive circuit. And the motor is driven by Pulse Width Modulations. In controlling PWM, it is modified to compose of H-type drive circuit with feedback diodes and switching transistor and design of control sequence so that it may show linear characteristics. As a result, speed characteristics of motor showed linear features. In order to get data on design of PLL control system, the parameters of 80[W[ motor & robot device is measured by simple software control. The PLL speed control system is schemed and designed by leaner drive circuit and measured parameters. A complete speed control system applied to 80[W] dc servo motor showed good linearity, stability and high response. Also, it is verified that the PLL speed control system has good compatibility as a mobile robot driver.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.148-150
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• 1993

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.

• Journal of the Korea Society for Simulation
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• v.4 no.2
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.133-138
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• 2019

The a-InGaZnO (a-IGZO) thin film transistor (TFT) has the advantages of larger mobility than that of amorphous silicon TFTs, acceptable reliability and uniformity over a large area, and low process cost. A capacitive-type touch sensor was studied with an a-IGZO TFT that can be used on the front side of a display due to its transparency. A capacitive sensor detects changes of capacitance between the surface of the finger and the sensor electrode. The capacitance varies according to the distance between the sensor plate and the touching or non-touching of the sensing electrode. A capacitive touch sensor using only one a-IGZO TFT was developed with the reduction of two bus lines, which made it easy to reduce the pixel pitch. The proposed sensor circuit maintained the amplification performance, which was investigated for various drive conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.295-296
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• 2006

We developed wire frame drive unit based on SMA for the 3D Shape display. Our basic concept is wire frame combination connected with a chain form which can create various shapes and it compared with pin array mechanism which is not able to display mushroom shape. It imitates antagonist mechanism of human musculoskeletal system. we create similar motion using repair-relaxation mechanism and locking mechanism by SMA. Therefore, in this paper, we propose SMA control solution for actuating repair-relaxation mechanism and locking mechanism. In our control system. we use optical sensor and quantitative angle between wire frames for closed loop control. And we supply amplified current for SMA by circuit composed of transistor and apply PWM signal to circuit for efficient control. So, wire frame drive unit enable diversity angle control based on sensor data. And then combination of wire frame drive units will create various objects.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.858-860
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• 2003

This paper introduces the drive system for 500MVA short-circuit generator. Drive system is usually low-voltage, but this system is 2300V high-voltage using Insulated Gate Bipolar Transistor(IGBT). Drive system consists of switchgear, 18-pulse transformer, converter(source bridge), inverter(load bridge) and control rack. In this paper, It describes the function and construction of each part.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.