• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.282-286
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• 1999

This paper presents a vector control of parallel drive, a beatless control and a low switching PWM technique for the propulsion system of Electric car as transient state which are included interrupting line voltage, changing line voltage slowly, suddenly, regenerating light load and starting from backward running. Improved performance and a validation of proposed method is shown by the experimental results using a 1.65MVA IGBT VVVF inverter and inertia load equivalent to 160 tons electric cars through a running and transient state test.

• Nuclear Engineering and Technology
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• 제41권9호
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• pp.1205-1214
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• 2009

The critical heat flux (CHF) levels that occurred due to exponential heat inputs for varying periods to a 1.0-mm diameter horizontal cylinder immersed in various liquids were measured to develop an extended database on the effect of high subcoolings for quasi-steady-state and transient maximum heat fluxes. Two main mechanisms of CHF were found. One mechanism is due to the time lag of the hydrodynamic instability (HI) which starts at steady-state CHF upon fully developed nucleate boiling, and the other mechanism is due to the explosive process of heterogeneous spontaneous nucleation (HSN) which occurs at a certain HSN superheat in originally flooded cavities on the cylinder surface. Steady-state CHFs were divided into three regions for lower, intermediate and higher subcooling at pressures resulting from HI, transition and HSN, respectively. HSN consistently occurred in the transient boiling CHF conditions that correspond to a short period. It was also found that the transient boiling CHFs gradually increased, then rapidly decreased and finally increased again as the period became shorter.

• Nuclear Engineering and Technology
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• 제49권5호
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• pp.920-927
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• 2017

With ever-advancing computer technology, the Monte Carlo (MC) neutron transport calculation is expanding its application area to nuclear reactor transient analysis. Dynamic MC (DMC) neutron tracking for transient analysis requires efficient algorithms for delayed neutron generation, neutron population control, and initial condition modeling. In this paper, a new MC steady-state simulation method based on time-dependent MC neutron tracking is proposed for steady-state initial condition modeling; during this process, prompt neutron sources and delayed neutron precursors for the DMC transient simulation can easily be sampled. The DMC method, including the proposed time-dependent DMC steady-state simulation method, has been implemented in McCARD and applied for two-dimensional core kinetics problems in the time-dependent neutron transport benchmark C5G7-TD. The McCARD DMC calculation results show good agreement with results of a deterministic transport analysis code, nTRACER.

• Journal of Mechanical Science and Technology
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• 제14권11호
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• pp.1296-1304
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• 2000

A program of steady-state and transient performance analysis for a 200kW-class small turboshaft engine with free power turbine was developed. An existing turbojet engine was used for the gas generator of the developed turboshaft engine, which was modified to satisfy performance requirements of this turboshaft engine. To verify the accuracy of steady-state performance program for this engine: the program was applied to the gas turbine test unit of the same type, and the analysis results were compared with experimental results. The developed transient performance analysis program using the CMF (Constant Mass Flow) method was utilized to analyze the cases of step increase and ramp increase of the fuel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.930-933
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• 2000

To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF$_4$) discharge at 0.2 Torr in a 2 cm gap parallel-plate. After the number densities of charged particles became steady-state, the applied voltage was increased or decreased in an instant and the transient behavior of charged particles and radicals was investigated from one steady-state to the next steady state.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• 대한수학회논문집
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• 제10권4호
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• pp.975-980
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• 1995

We suggest an improvement of the algorithm in [2] for calculating the transient solutions for continuous time Markov chain with countable state space.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.268-273
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• 1997

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

• 전기학회논문지
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• 제63권5호
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• pp.719-725
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• 2014

Transient of Electric railway vehicle occurs when change to another state. The duration of the transient phenomenon only takes a few second. During this time is considered, the present of short circuit current and the normal state, the energy is present in the form of a magnetic field. Recognized by the vibration of the transient voltage or transient current at witch energy is present in the field. This paper is presented the result of transient characteristics by transformer % impedance at the time of opening and closing of the main circuit Breaker on the electric railway vehicle.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.