• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.69-72
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• 2003

Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor powders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. XRD and DC magnetization analysis were performed in order to investigate the fraction of Bi-2223 phase in Bi-2223/Ag HTS tape. We could achieve best Ic of 70 A class at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process. DC magnetization analysis was useful to investigate the fraction of Bi-2223 phase in the Bi-2223/Ag tape.

• 한국결정성장학회지
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• 제34권4호
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• pp.131-138
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• 2024

본 연구에서는 소결된 알루미나 기판에 코팅된 35Bi₂O₃-15Al₂O₃-50SiO₂(BiAlSiO) 및 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃(BiAlSiOF) 유리층의 미세구조와 플라즈마 저항 특성이 소결 조건에 따라 어떻게 변화하는지를 조사하였다. 코팅된 층은 바 코팅(bar Coating) 방법을 사용하여 형성되었으며, 이후 탈지 공정을 거쳐 반구 형성 온도 전/후인 700~900℃ 범위의 온도에서 소결 되었다. 내플라즈마성은 석영유리보다 두개의 코팅 유리가 약 2~3배 더 높았으며, F를 첨가한 BiAlSiOF는 BiAlSiO보다 높은 내플라즈성을 나타냈다. 이는 불소 첨가 효과로 판단된다. 소결 온도가 700℃에서 800℃로 증가함에 따라 두 유리 모두 내플라즈마성이 향상되었으나, 900℃까지 소결 온도를 증가시키면 내플라즈마성은 다시 감소한다(즉, 식각률이 높아진다). 이러한 현상은 두 유리의 결정화 거동과 관련 깊은 것으로 판단된다. 소결 조건에 따른 내플라즈마성의 변화는 Al과 Bi-rich 상의 출현여부에 관련된 것으로 생각된다.

• Bulletin of the Korean Chemical Society
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• 제20권9호
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• pp.1045-1048
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• 1999

Electronic structures calculated based upon the extended Huckel tight-binding method for Ba1-xKxBiO3 with x = 0, 0.04, and 0.4 are reported. It is noticed that the commensurate ordering of Bi 3+ and Bi 5+ is responsible for the insulating and semiconducting behavior in BaBiO3 and Ba0.96K0.04BiO4. The band gaps of 3.2 eV and 1.4 eV for the former and the latter compounds, respectively, are consistent with the experimental results. Doping in Bi 6s-block band up to x = 0.4 causes the collapse of the ordering of Bi 3+ and Bi 5+, thereby resulting in the superconductivity in the Ba0.6K0.4BiO3 compound. Strikingly, the character of oxygen contributes to the conducting mechanism than that of the bismuth. This is quite different from the cuprate superconductors in which the character of copper dominates that of oxygen.

• 한국인터넷방송통신학회논문지
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• 제17권5호
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• pp.187-192
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• 2017

마이크로스트립 콤 어레이 안테나에 대한 CSRR-메타물질의 영향을 연구하였다. 마이크로스트립 콤 어레이 안테나는 12개의 방사체로 구성되었고 24GHz ISM 대역에서 16.09dBi의 이득과 0.24GHz 대역폭을 갖도록 설계하였다. 설계된 안테나는 안테나 면에 수직한 방사빔과 16.09dBi의 동일편파 이득, -10.86dBi의 교차편파 이득을 갖고 있었다. CSRR-메타물질은 0.24GHz이던 마이크로스트립 콤 어레이 안테나의 임피던스 대역폭을 3.6GHz로 대폭 증가시켰으나 동일편파 이득이 10.8dBi로 되고 교차편파 이득이 14.1dBi로 되어 동일편파와 교차편파가 혼재했으며 안테나 이득을 1.99dB 만큼 저하시켰다. 한편, CSRR 링의 스플릿 방향에 따른 연구에서 링의 스플릿 방향을 위로하거나 아래로 했을 때는 거의 같은 특성을 보였다. 그러나 링의 스플릿 방향을 위와 아래로 교번하여 배치하였을 때는 동일편파 이득이 -1.29dBi로 감소하고 교차편파 이득이 13.9dBi로 증가하여 교차편파가 주가 되는 파로 변환되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• 한국재료학회지
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• 제21권10호
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• 대한음성학회지:말소리
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• 제53호
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• pp.75-92
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• 2005

Prosody Generation Based on C-ToBI Representation for Text-to-SpeechSeungwon Kim, Yu Zheng, Gary Geunbae Lee, Byeongchang KimProsody modeling is critical in developing text-to-speech (TTS) systems where speech synthesis is used to automatically generate natural speech. In this paper, we present a prosody generation architecture based on Chinese Tone and Break Index (C-ToBI) representation. ToBI is a multi-tier representation system based on linguistic knowledge to transcribe events in an utterance. The TTS system which adopts ToBI as an intermediate representation is known to exhibit higher flexibility, modularity and domain/task portability compared with the direct prosody generation TTS systems. However, the cost of corpus preparation is very expensive for practical-level performance because the ToBI labeled corpus has been manually constructed by many prosody experts and normally requires a large amount of data for accurate statistical prosody modeling. This paper proposes a new method which transcribes the C-ToBI labels automatically in Chinese speech. We model Chinese prosody generation as a classification problem and apply conditional Maximum Entropy (ME) classification to this problem. We empirically verify the usefulness of various natural language and phonology features to make well-integrated features for ME framework.

• Kyungpook Mathematical Journal
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• 제45권4호
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• pp.527-537
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• 2005

The intuitionistic fuzzification of the notion of a bi-ideal in ordered semigroups is considered. In terms of intuitionistic fuzzy set, conditions for an ordered semigroup to be completely regular is provided. Characterizations of intuitionistic fuzzy bi-ideals in ordered semigroups are given. Using a collection of bi-ideals with additional conditions, an intuitionistic fuzzy bi-ideal is constructed. Natural equivalence relations on the set of all intuitionistic fuzzy bi-ideals of an ordered semigroup are investigated.

• 마이크로전자및패키징학회지
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• 제14권2호
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• pp.9-15
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• 2007

미세열전박막소자에 적용을 하기 위해 전기도금으로 형성한 Bi-Te 박막의 열전특성과 포토레지스트 공정에 대하여 연구하였다. $Bi_2O_3$와 $TeO_2$를 1M $HNO_3$에 용해시킨 20 mM 농도의 Bi-Te 도금 용액을 사용하여 박막을 도금 후, 용액내 Te/(Bi+Te)비에 따른 Bi-Te 박막의 열전특성을 분석하였다. Te/(Bi+Te)비가 0.5에서 0.65로 증가함에 따라 Bi-Te 도금막의 전자농도의 증가로 Seebeck 계수가 $-59{\mu}V/K$에서 $-48{\mu}V/K$로 변하고 전기비저항이 $1m{\Omega}-cm$ 에서 $0.8m{\Omega}-cm$로 감소되었다. 조성이 $Bi_2Te_3$에 근접한 도금막에서 가장 높은 $3.5{\times}10^4W/K^2-m$의 출력인자를 얻을 수 있었다. 다층 overhang 공정을 이용하여, 직경 $100{\mu}m$이며 깊이 $30{\mu}m$ 형상의 미세열전소자 형성용 포토레지스트 패턴의 형성이 가능하였다.

• 한국재료학회지
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• 제30권2호
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• pp.61-67
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• 2020

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.