• 한국자기학회지
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• 제8권3호
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• pp.111-117
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• 1998

최근 perovskit 구조의 망간산화물에서 발견된 초거대자기저항(colossal magnetoresistance: CMR) 현상의 발견은 물리적 특이성과 공업적인 응용 가능성으로 학계의 큰 주목을 받고 있다. 그런데 이러한 CMR 현상은 망간화산화물외에 pyrochlore 구조의 Tl2Mn2O7과 spinel 구조의 Cr-황화물에서도 관측됨었음이 보고되었다. 본 논문에서는 Cr-황화물 Fe1-xCuxCr2S4 (x=0.0, 0.5, 1.0)의 전자구조를 구재밀도근사(local density approximation: LDA) lineatized muffintin orbital(LMTO) 밴드계산 방법을 이용하여 연구하였다. 그 결과 x=0.0, 0.5에 대한 특성저항은 절반금속(Half-Metal)성질과 얀-텔러(Jahn-Teller) 효과를 적용하여 정성적인 이해가 가능하였다. 특히, x=0.0, 0.5, 1.0각각에 대해서 전도모델을 제시하여, 계산결과로 얻어진 절반금속 전자구조가 CMR 현상과 밀접한 관련이 있음을 예측하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.292-292
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• 2007

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.54-54
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• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• 한국산업보건학회지
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• 제29권3호
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• pp.310-321
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• 2019

Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

• 공업화학
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• 제22권1호
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• pp.98-103
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• 2011

DSSC의 광전 효율 증대와 Pt 상대전극의 접착성 향상을 위하여 FTO (Fluorine-doped Tin Oxide) 유리면에 Ni underlayer를 전기 도금 후 Pt 층을 전기 도금하였다. Ni underlayer는 $10mA/cm^2$에서 2 min 동안 도금한 경우 Ni 층과 FTO 면사이의 접착성이 가장 우수하게 나타났으며, Ni underlayer를 $10mA/cm^2$에서 2 min, Pt 층을 $5mA/cm^2$에서 1 min 동안 전기 도금한 상대전극의 XRD 분석 결과 Ni 및 Pt의 금속 회절 peak들을 관찰 할 수 있었다. 이렇게 제조한 상대전극을 사용하여 DSSC의 impedance 측정 결과 75 ohm의 가장 낮은 저항을 나타냈으며, 광전 효율은 5.6%로서 가장 높은 값을 나타내었다.

• 대한금속재료학회지
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• 제49권10호
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• 센서학회지
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• 제31권2호
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• pp.90-95
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• 2022

The effect of the structure of an ITO nanoparticle film sensor on its performance was studied. A printed ITO film (P-ITO film) was fabricated on a flexible polyethylene terephthalate (PET) substrate, and the contact resistance of the electrode and sensor response change were clarified according to the detection position. The contact resistance between Ag and P-ITO was observed to be -204.4 Ω using the transmission line method (TLM), confirming that a very good ohmic contact is possible. In addition, we confirmed that the contact position of the analyte had a significant influence on the response of the sensor. Based on these results, the performance of the four types of sensors was compared. Consequently, we observed that 1) optimizing the resistance of the printed film, 2) optimizing the electrode structure and analyte input position, and 3) optimizing the electrode area are very important for fabricating a metal oxide nanoparticle (MONP) sensor with optimal performance.

• 센서학회지
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• 제31권3호
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• pp.163-167
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• 2022

In this study, we investigated a carbon nanotube (CNT) film sensor to detect hazardous and noxious substances distributed in seawater. The response change of the sensor was studied according to environmental temperature, and its temperature coefficient of resistance (TCR, α) was measured. The temperature of the CNT film (~50 ㎛) was in the range of 20-50 ℃, and αCNT was calculated to be -0.0011 %/ ℃. We experimentally confirmed that the CNT film had a smaller TCR value than that of the conventional sensor. Therefore, we investigated the response change of the CNT sensor according to temperature. The CNT sensor showed a relatively small error of approximately 2.3 % up to 30 ℃, which is within the temperature range of the seawater of the Korean Peninsula. However, when the temperature exceeded 40 ℃, the error in the CNT sensor increased by more than 5.2 %. We fabricated a metal oxide (ITO, indium-tin-oxide) film and compared its performance with that of the CNT sensor. The ITO sensor showed an error of >12.5 % at 30 ℃, indicating that in terms of the stability of the sensor to temperature, the CNT film sensor has superior performance.