• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.910-911
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• 2006

We newly designed and manufactured a new arranging system for a three-dimensional artificial crystal of monosized micro particles. In this system, a robotic micro-manipulator accurately locates the spherical particle onto the lattice point, and subsequently fiber lasers micro-weld the contact points between the neighboring particles. Actually, one- and two-dimensional arrays were constructed using monosized tin particles with the diameter of 400 m. Moreover, due to optimization of the process parameters, we successfully constructed the artificial crystals of simple cubic and diamond structures. In particular, the diamond structure which can represent a large photonic band gap is expected to progress toward a practical photonic crystal device.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.604-605
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• 2006

Recently the Marangoni convention is supposed to be an important phenomenon that significantly affects the solidification. For understanding the Marangoni convection mechanism, visualizing the convention phenomenon of molten tin with ultrasonic has been conducted. This paper reports developing a tracer material of micro metal balloon that is used in the molten system. We have succeeded in coating the surface of Shirasu-ballons with nickel by plating process. The obtained metal balloon is spherical and some characterizations were conducted.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Journal of Powder Materials
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• v.25 no.4
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• pp.302-308
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• 2018

A lean alloy is defined as a low alloy steel that minimizes the content of the alloying elements, while maintaining the characteristics of the sintered alloy. The purpose of this study is to determine the change in microstructure and mechanical properties due to the addition of silicon or tin in Fe-Mo-P, Fe-Mn-P, and Fe-Mo-Mn-P alloys. Silicon- or tin-added F-Mo-P, Fe-Mn-P, and Fe-Mo-Mn-P master alloys were compacted at 700 MPa and subsequently sintered under a $H_2-N_2$ atmosphere at $1120^{\circ}C$. The sintered density of three alloy systems decreases under the same compacting pressure due to dimensional expansion with increasing Si content. As the diffusion rate in the Fe-P-Mo system is higher than that in the Fe-P-Mn system, the decrease in the sintered density is the largest in the Fe-P-Mn system. The sintered density of Sn added alloys does not change with the increasing Sn content due to the effect of non-dimensional changes. However, the effect of Si addition on the transverse rupture strengthening enhancement is stronger than that of Sn addition in these lean alloys.

• Journal of Powder Materials
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• v.15 no.6
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• pp.450-457
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• 2008

The objectives of this study were the development of a synthesis technique for highly active nanosized ITO powder and the understanding of the reaction mechanisms of the ITO precursors. The precipitation and agglomeration phenomena in ITO and $In_{2}O_{3}$ precursors are very sensitive to reaction temperature, pH, and coexisting ion species. Excessive $Cl^-$ ion and $Sn^{+4}$ ions had a negative effect an synthesizing highly active powders. However, with a relevant stabilizing treatment the shape and size of ITO and $In_{2}O_{3}$ precursors could be controlled and high density sintered products of ITO were obtained. By applying the reprecipitation process (or stabilization technique), highly active ITO and $In_{2}O_{3}$ powders were synthesized. Sintering these powders at $1500^{\circ}C$ for 5 hours produced 97% dense ITO bodies.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.224-229
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• 2010

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.194-198
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• 2012

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) ${\rightarrow}$ 2268, 2164 (due to In-OH stretching mode) ${\rightarrow}$ 1546 (due to overtones of Sn-O-Sn modes) ${\rightarrow}$ 1412 (due to overtones of Sn-O-Sn modes) $cm^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.224-228
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• 2014

Recently, the demands for separation/recovery of valuable metals such as nickel or tin from copper based alloys has been attracting much attention from the viewpoints of environmental protection and resource utilization. In this report, experimental results on concentration increasement of nickel and tin compared to the previous report are investigated. Ni is successfully separated by a organic solvent and reduced to the metal powder whose concentration is over 98 %. Sn is separated by a selective solution method and its concentration is increased to 97.5 % by three consecutive solution and reduction process. Crystal structure, surface morphology and microstructure of the separated samples are studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.