• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.119-119
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• 2010

We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1212-1217
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• 2004

Red organic electroluminescent (EL) devices based on tris(8-hydroxyquinorine aluminum) (Alq$_3$) doped with red emissive materials, 4-(dicyanomethylene)-2-t-butyl -6-(l,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). poly(3-hexylthiophene) (P3HT). rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3.6.7-tetrahydro-lH,5H-benzo-[i,j]quinolizin-8yl)vinyl]-4H-pyran (DCM2) were fabricated for applying to the red light source, The photoluminescence (pL) intensities of red emissive materials doped in Alq$_3$ are limited by the concentration quenching with increasing the doping ratio and the doping concentration of DCJTB, DCM2, P3HT and rubrene measured at the maximum intensity showed 5, 1, 0.5 and 2 wt%, respectively. Time-resolved PL dynamic results showed that the PL lifetime of red emissive materials doped in Alq$_3$ were increased more than the value of material itself. It means that the efficient energy transfer occurred in the mixed state and Alq$_3$ is a suitable host materials for red emissive materials, The device which was used DCJTB as a dopant achieved the best result of the maximum luminance of 594 cd/$m^2$ at 15 V and showed the chromaticity coordinates of x=0,624, y=0,371.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.222.1-222.1
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• 2015

Recently, graphene quantum dots (GQDs) have attracted great attention due to various properties including cost-effectiveness of synthesis, low toxicity, and high photostability. Nevertheless, the origins of photoluminescence (PL) from GQDs are unclear because of extrinsic states of the impurities, disorder structures, and oxygen-functional groups. Therefore, to utilize GQDs in various applications, their optical properties generated from the extrinsic states should be understood. In this work, we have focused on the effect of oxygen-functional groups in PL of the GQDs. The GQDs with nanoscale and single layer are synthesized by employing graphite nanoparticles (GNPs) with 4 nm. The series of GQDs with different amount of oxygen-functional groups were prepared by the chain of chemical oxidation and reduction process. The fabrication of a series of graphene oxide QDs (GOQDs) with different amounts of oxygen-contents is first reported by a direct oxidation route of GNPs. In addition, for preparing a series of reduced GOQDs (rGOQDs), we employed the conventional chemical reduction to GOQDs solution and controlled the amount of reduction agents. The GOQDs and rGOQDs showed irreversible PL properties even though both routes have similar amount of oxyen-functional groups. In the case of a series of GOQDs, the PL spectrum was clearly redshifted into blue and green-yellowish color. On the other hand, the PL spectrum of rGOQDs did not change significantly. By various optical measurement such as the PL excitation, UV-vis absorbance, and time-resolved PL, we could verify that their PL mechanisms of GOQDs and rGOQDs are closely associated with different atomic structures formed by chemical oxidation and reduction. Our study provides an important insights for understanding the optical properties of GQDs affected by oxygen-functional groups. [1]

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.160-160
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• 2010

테라헤르츠 소스로 저온 InGaAs를 대체하기 위해 저온에서 성장한 $In_{0.64}Al_{0.36}Sb$의 성장 온도에 따른 광학적 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. 또한 Be 도핑 농도에 따른 p형 $In_{0.64}Al_{0.36}Sb$의 PL과 TRPL 특성을 undoped $In_{0.64}Al_{0.36}Sb$와 Si-doped $In_{0.64}Al_{0.36}Sb$ 결과와 비교 분석하였다. 본 연구에 사용한 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 $In_{0.64}Al_{0.36}Sb$을 다양한 성장온도에서 ${\sim}3.7\;{\mu}m$두께 성장하였다. $In_{0.64}Al_{0.36}Sb$의 성장온도는 $400^{\circ}C$ 에서 $460^{\circ}C$까지 변화시키며 성장하였으며, Si과 Be 도핑한 $In_{0.64}Al_{0.36}Sb$ 시료는 약 $420^{\circ}C$에서 성장하였다. 모든 시료의 PL 피크는 ~1450 nm 근처에서 나타나며 단파장 영역에 shoulder 피크가 나타났다. 그러나 가장 낮은 온도 $400^{\circ}C$에서 성장한 시료는 1400 nm에서 1600 nm에 걸쳐 매우 넓은 피크가 측정되었다. PL 세기는 $450^{\circ}C$ 에서 성장한 시료가 가장 강하게 나타났으며, $435^{\circ}C$에서 성장한 시료의 PL 세기가 가장 약하게 나타났다. 방출파장에 따른 PL 소멸곡선을 측정하였으며 double exponential function을 이용하여 운반자 수명시간을 계산하였다. 운반자 수명시간은 빠른 소멸성분 $\tau_1$과 느린 소멸성분 $\tau_2$가 존재하고 빠른 성분 $\tau_1$의 PL 진폭이 약 80%로 느린 성분 $\tau_2$보다 우세하게 나타났다. 각 PL 피크에서의 운반자 수명시간 $\tau_1$은 ~1 ns로 성장온도에 따른 변화는 관찰되지 않았다. 또한 방출파장이 1400 nm에서 1480 nm까지 PL 피크 근처에서 운반자 수명시간은 거의 일정하게 나타났다. Be-doped 시료의 PL 피크는 1236 nm에서 나타나며, Si-doped 시료는 1288 nm, undoped 시료는 1430 nm에서 PL 피크가 측정되었다. PL 피크에서 PL 소멸곡선은 Be-doped 시료가 가장 빨리 감소하였으며, Si-doped 시료가 가장 길게 나타났다. 이러한 결과로부터 $In_{0.64}Al_{0.36}Sb$의 광학적 특성은 성장 온도, dopant type, 도핑 농도에 따라 변화하는 것을 확인하였다.

• Journal of IKEEE
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• v.27 no.4
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• pp.556-560
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• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.